Methods of making semi-conductor devices

Claim 1

A METHOD OF MAKING A SEMI-CONDUCTOR DEVICE INCLUDING A BASE OF P-TYPE SEMI-CONDUCTIVE MATERIAL COMPRISING THE STEPS OF ESTABLISHING A RECTIFYING BARRIER UPON A FIRST SURFACE OF SAID BODY, BIASING SAID BARRIER IN THE REVERSE DIRECTION, CONTACTING AN ELECTROLYTE TO A SECOND SURFACE OF SAID BODY OPPOSITE SAID FIRST SURFACE, APPLYING AN ETCHING POTENTIAL BETWEEN SAID ELECTROLYTE AND SAID BODY THEREBY TO ETCH A SHAPED DEPRESSION INTO SAID SECOND SURFACE, CONTACTING A METAL ION-BEARING ELECTROLYTE TO SAID SECOND SURFACE, SAID METAL BEING ONE THAT FORMS A RECTIFYING CONTACT WHEN ELECTROPLATED UPON SAID SEMICONDUCTIVE MATERIAL, BIASING SAID BARRIER UPON SAID FIRST SURFACE IN A FORWARD DIRECTION AND APPLYING AN ELECTROPLATING POTENTIAL BETWEEN SAID ELECTROLYTE AND SAID BODY THEREBY TO DEPOSIT SAID METAL UPON SAID SECOND SURFACE AT THE BASE OF SAID DEPRESSION, ETCHING SAID SECOND SURFACE THEREBY TO REDUCE THE THICKNESS OF SAID DEPOSITED METAL AND TO REMOVE SAID DEPOSITED METAL FROM PREDETERMINED PORTIONS OF SAID SURFACE, CONTACTING SAID SECOND SURFACE WITH AN ELECTROPLATING ELECTROLYTE, SAID ELECTROPLATING ELECTROLYTE COMPRISING IONS OF A METAL CAPABLE OF IMPARTING P-TYPE CONDUCTIVITY TO SAID SEMI-CONDUCTIVE MATERIAL WHEN DISPERSED THEREIN, BIASING SAID BARRIER UPON SAID FIRST SURFACE IN A REVERSE DIRECTION AND APPLYING AN ELECTROPLATING POTENTIAL BETWEEN SAID BODY AND SAID ELECTROPLATING ELECTROLYTE THEREBY TO DEPOSIT A METAL LAMINA UPON SAID SECOND SURFACE, SAID LAMINA BEING CLOSELY ADJACENT TO AND SEPARATED FROM SAID ELECTRODE.