Method of fabricating semiconductive translating devices

Claim 1

THE METHOD OF PRODUCING A CAVITY IN A BODY OF SEMICONDUCTIVE MATERIAL WHICH COMPRISES FORMING A WATER-SHAPED BODY OF SEMICONDUCTIVE MATERIAL, SAID BODY HAVING TWO MAJOR SUFFACES, AT LEAST ONE OF SAID MAJOR SURFACES HAVING SUBSTANTIALLY UNIFORM ELECTRICAL CHARATERISTICS THEREOVER, APPLYING A RECTIFYING CONNECTION ON SAID OTHER MAJOR SURFACE OPPOSITE THE PORTION OF SAID ONE MAJOR SURFACE IN WHICH A CAVITY IS TO BE FORMED, SAID OTHER MAJOR SURFACE HAVING AN AREA MANY TIMES GREATER THAN THE AREA OF SAID CONNECTION, IMMERSING AN ENTIRE REGION OF SAID ONE MAJOR SURFACE AND ENCOMPRISING, AND EXTENDING BEYOND THE PORTION IN WHICH SAID CAVITY IS TO BE FORMED IN AN ELECTROLYTE WHILE SAID CONNECTION AND AT LEAST THE SURROUNDING AREA OF SAID OTHER MAJOR SURFACE ARE ISOLATED FROM SAID ELASTROLYTE, BIASING SAID BODY ANODICALLY WITH RESPECT TO SAID ELECTROLYTE, AND PASSING A CURRENT FROM SAID RECTIFYING CONNECTION THROUGH SAID WATER AND TO SAID ELECTROLYTE WHEREBY THE ETCHING CURRENT DENSITY IS GREATEST IN PORTION OF SAID IMMERSED ONE MAJOR SURFACE ACROSS SAID BODY FROM SAID CONNECTION.