US4661712A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for scanning a high current ion beam with a constant angle of incidence
Assignee: Varian Semiconductor Equipment Associates Inc
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Filing: 1985-05-28
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Granted: 1987-04-28
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Expires: 2005-05-28
Abstract
Abstract Normal or constant angle scanning of a target with high current ion beam is provided by positioning a space charge lens between a beam deflection system and the target. The space charge lens is positioned such that its focal point coincides with the virtual center of deflection. The space charge lens steers the scanned beam into parallel paths so as to maintain a constant angle of incidence upon the workpiece. In an electrostatic deflection system, two sets of y-axis deflection plates can be axially positioned on opposite sides of the x-axis deflection plates to provide a single virtual center of deflection. The apparatus is useful for performing ion implantation with higly uniform dose distribution.
Inventors
- 👤 Richard M. Mobley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 09:36
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/3002; H01J37/3007; H01J37/317; H01J37/3171
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
104 words
Apparatus for charged particle beam treatment of a workpiece comprising: means for forming a charged particle beam of predetermined parameters; means for positioning the workpiece generally in the path of the charged particle beam; scanning means for deflecting the beam in at least one dimension over the surface of the workpiece; and space charge lens means interposed between said workpiece and said scanning means for steering the scanned beam into parallel paths, said spaced charge lens means including means for generating electrostatic and magnetic fields for confining an electron cloud having a generally uniform spatial distribution within a region traversed by the scanned beam.
Claim 2
Dependent Claim
104 words
Apparatus for charged particle beam treatment of a workpiece comprising: means for forming a charged particle beam of predetermined parameters; means for positioning the workpiece generally in the path of the charged particle beam; scanning means for deflecting the beam in at least one dimension over the surface of the workpiece; and space charge lens means interposed between said workpiece and said scanning means for steering the scanned beam into parallel paths, said spaced charge lens means including means for generating electrostatic and magnetic fields for confining an electron cloud having a generally uniform spatial distribution within a region traversed by the scanned beam.
Claim 3
Dependent Claim
29 words
Apparatus as defined in claim 1 wherein the scanning means includes a virtual center of deflection which is coincident with a focal point of said space charge lens means.
Claim 4
Dependent Claim
24 words
Apparatus as defined in claim 1 wherein the axis of the scanned beam passes through the focal point of said space charge lens means.
Claim 5
Dependent Claim
15 words
Apparatus as defined in claim 1 wherein said space charge lens means is axially symmetric.
Claim 6
Dependent Claim
61 words
Apparatus as defined in claim 2 wherein said scanning means is adapted for two dimensional scanning and includes a first set of deflection plates for beam deflection in one direction and two sets of deflection plates positioned on opposite sides of said first deflection plates axially upstream and downstream thereof, for beam deflection in a direction orthogonal to said one direction.
Claim 7
Dependent Claim
50 words
Apparatus as defined in claim 5 wherein said space charge lens means comprises a positively biased first cylindrical electrode, grounded cylindrical electrodes positioned near the ends of the first cylindrical electrode and axially aligned therewith, and current carrying coils for producing an axial magnetic field in the first cylindrical electrode.
Claim 8
Dependent Claim
31 words
Apparatus as defined in claim 1 wherein said means for forming a charged particle beam comprises means for forming a beam of ions and wherein said workpiece comprises a semiconductor wafer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-27 | 1990-10-27 | 1991-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-27 | 1994-10-27 | 1995-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-27 | 1998-10-27 | 1999-04-28 | $7700.00 | Window Closed / Lapsed |