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US4661679A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor laser processing with mirror mask

Assignee: Mid-America Commercialization Corp
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Filing: 1985-06-28
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Granted: 1987-04-28
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Expires: 2005-06-28
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Abstract

Abstract A semiconductor processing technique is provided for reacting with the surface (2) of a semiconductor wafer substrate (4) only along a predetermined pattern without a pass-through mask. Excimer pulsed ultraviolet laser radiation (32) is reflected by a mirror (10) having a selective pattern (12) thereon to direct laser radiation only along a predetermined pattern onto the substrate surface (2) as determined by the selective mirror pattern (12), to selectively activate designated areas of the substrate (4). There is further provided a method for forming a predetermined pattern on a cylindrical target (76) by directing excimer pulsed ultraviolet laser radiation (74) along the conical axis of a conical mirror (72) having a selective pattern thereon.

Inventors

  • 👤 John B. Pardee

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 14:03
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 147 words
Apparatus for fabricating a semiconductor comprising: a chamber; means for supporting said semiconductor within said chamber; means for introducing excimer pulsed ultraviolet laser radiation into said chamber; and mirror means for reflecting incident said excimer pulsed ultraviolet laser radiation onto said semiconductor at selective localized areas forming a predetermined pattern according to a selective mirror reflective pattern, to selectively activate designated areas of said semiconductor; wherein said mirror means comprises a front side reflecting said incident excimer pulsed ultraviolet laser radiation along said predetermined pattern, and a backside disposed oppositely from said front side, and comprising means for cooling said backside; and wherein said mirror means comprises a laser-absorbing medium and a laser-reflective medium, said laser-absorbing medium having said cooling means adjacent thereto, and said laser-reflective medium having said selective reflective pattern formed thereon; and comprising a laser-transparent medium between said laser-absorbing medium and said laser-reflective medium.
Claim 2
Dependent Claim 147 words
Apparatus for fabricating a semiconductor comprising: a chamber; means for supporting said semiconductor within said chamber; means for introducing excimer pulsed ultraviolet laser radiation into said chamber; and mirror means for reflecting incident said excimer pulsed ultraviolet laser radiation onto said semiconductor at selective localized areas forming a predetermined pattern according to a selective mirror reflective pattern, to selectively activate designated areas of said semiconductor; wherein said mirror means comprises a front side reflecting said incident excimer pulsed ultraviolet laser radiation along said predetermined pattern, and a backside disposed oppositely from said front side, and comprising means for cooling said backside; and wherein said mirror means comprises a laser-absorbing medium and a laser-reflective medium, said laser-absorbing medium having said cooling means adjacent thereto, and said laser-reflective medium having said selective reflective pattern formed thereon; and comprising a laser-transparent medium between said laser-absorbing medium and said laser-reflective medium.

References Cited (Backward Citations)

US3986767A Cited
JPS5332497A Cited
US4156124A Cited
US4135902A Cited
US4370175A Cited
JPS586786A Cited
US4532401A Cited
JPS58184080A Cited
US4480169A Cited
US4495218A Cited
US4505949A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-04-27 1990-10-27 1991-04-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-04-27 1994-10-27 1995-04-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-04-27 1998-10-27 1999-04-28 $7700.00 Window Closed / Lapsed

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