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Patent US4661370A successfully refreshed from Google Patents.
US4661370A
Expired / Lapsed
US
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Electric discharge processing of thin films
Assignee: Siemens Solar Industries LP
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Filing: 1984-02-08
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Granted: 1987-04-28
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Expires: 2004-02-08
Abstract
Abstract A deposited film is processed in a preselected pattern by discharging electric energy through the film across a gas dielectric. In a preferred embodiment, a voltage pulse chain is applied to a moving probe spaced a preselected distance from the film. The discharge either removes the film material over the pattern to expose underlying material, or produces a conductive path from the top to the bottom of the film.
Inventors
- 👤 Dale E. Tarrant
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 20:27
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/80; H10F; H10F19/00; H10F19/30; H10F19/31; H10F71/00; H10F71/10; H10F71/131; H10F71/135; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
84 words
A method of selectively processing an existing inorganic film in a preselected pattern, comprising the steps of: providing a gaseous environment at a preselected location on the film; positioning electric probe means a preselected distance from the film at said location; applying an electric potential to the probe means to discharge electric energy through the gaseous environment as a spark from the probe means to the film at said location; and causing relative movement between the probe means and the film along said pattern.
Claim 2
Independent Claim
84 words
A method of selectively processing an existing inorganic film in a preselected pattern, comprising the steps of: providing a gaseous environment at a preselected location on the film; positioning electric probe means a preselected distance from the film at said location; applying an electric potential to the probe means to discharge electric energy through the gaseous environment as a spark from the probe means to the film at said location; and causing relative movement between the probe means and the film along said pattern.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein: the probe means is moved at a constant rate relative to the film to define said pattern.
Claim 4
Dependent Claim
30 words
The method of claim 1 wherein: said film includes at least two component layers; and the discharge produces said conductive path by fusing the component layers together over said pattern.
Claim 5
Dependent Claim
10 words
The method of claim 1 wherein: the film is conductive.
Claim 6
Dependent Claim
18 words
The method of claim 4 wherein: the film is deposited on an insulating substrate prior to said processing.
Claim 7
Dependent Claim
10 words
The method of claim 5 wherein: the film is grounded.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein: the discharge removes the material of the film over said pattern.
Claim 9
Dependent Claim
16 words
The method of claim 7 wherein: the material of the film is vaporized over said pattern.
Claim 10
Dependent Claim
28 words
The method of claim 1 wherein: said film includes a semiconductive material; and the discharge produces a conductive path through the thickness of the film over said pattern.
Claim 11
Dependent Claim
21 words
The method of claim 9 wherein: the gaseous environment is provided by directing a gas jet substantially toward the probe means.
Claim 12
Dependent Claim
32 words
The method of claim 10 wherein: the material of the film is vaporized over said pattern; and the products of vaporization are carried away from the preselected location by the gas jet.
Claim 13
Dependent Claim
12 words
The method of claim 10 wherein: the gaseous environment is substantially inert.
Claim 14
Dependent Claim
13 words
The method of claim 10 wherein: the gaseous environment consists essentially of argon.
Claim 15
Dependent Claim
106 words
In the manufacture of a photovoltaic device, a method of selectively processing an existing inorganic film in a preselected pattern, comprising the steps of: providing a substantially inert gaseous environment at a first preselected location on the film; positioning electric probe means a preselected distance from the film at said first location; discharging electric energy through the gaseous environment as a spark from the probe means to the film at said location by applying a voltage pulse to the probe means; moving the probe means relative to the film along said pattern; and applying additional pulses to the probe means as the probe means is moved.
Claim 16
Dependent Claim
106 words
In the manufacture of a photovoltaic device, a method of selectively processing an existing inorganic film in a preselected pattern, comprising the steps of: providing a substantially inert gaseous environment at a first preselected location on the film; positioning electric probe means a preselected distance from the film at said first location; discharging electric energy through the gaseous environment as a spark from the probe means to the film at said location by applying a voltage pulse to the probe means; moving the probe means relative to the film along said pattern; and applying additional pulses to the probe means as the probe means is moved.
Claim 17
Dependent Claim
25 words
The method of claim 14 wherein: each pulse is sufficient to remove the material of the film at a different preselected location on said pattern.
Claim 18
Dependent Claim
17 words
The method of claim 15 wherein: the material of the film is substantially vaporized over said pattern.
Claim 19
Dependent Claim
32 words
The method of claim 14 wherein: said at least one film includes a semiconductive material; and the voltage pulses produce a conductive path through the thickness of the film over said pattern.
Claim 20
Dependent Claim
21 words
The method of claim 17 wherein: the voltage pulses produce said conductive path by crystallizing the semiconductive material over said pattern.
References Cited (Backward Citations)
US3296011A
Cited
US4269867A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-27 | 1990-10-27 | 1991-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-27 | 1994-10-27 | 1995-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-27 | 1998-10-27 | 1999-04-28 | $7700.00 | Window Closed / Lapsed |