Patent US4660277A successfully refreshed from Google Patents.
US4660277A
Expired / Lapsed
US
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Method for forming large area amorphous semiconductor layer and contact type image sensor
Assignee: Fujifilm Business Innovation Corp
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Filing: 1985-06-18
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Granted: 1987-04-28
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Expires: 2005-06-18
Abstract
Abstract A flexible insulating substrate is fed through an amorphous semiconductor layer forming region, and an amorphous semiconductor layer is formed on the substrate continuously and in a wide range along its length. In this manner, an array of photoelectric converting elements is formed continuously along the length of the flexible substrate, the substrate thus formed with the array is cut into a plurality of chips, and each chip having the elements is bonded onto a member supporting driving circuits thereby producing a contact type image sensor capable of sensing a wide range of image simultaneously.
Inventors
- 👤 Sadahiro Tei
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:58
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; H10F71/00; H10F71/10; H10F71/107; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
149 words
A method for producing a contact type image sensor comprising: an array forming step of forming a photoelectric converting element array on a flexible substrate, said array forming step comprising the steps of forming continuously a plurality of lower electrodes on said flexible substrate by passing said substrate through a first depositing region, forming continuously an amorphous semiconductor layer on said substrate formed with said lower electrodes by passing said substrate through a second depositing region, and forming continuously an upper electrode on said substrate formed with said lower electrodes and said amorphous semiconductor layer by passing said substrate through a third depositing region; a cutting step of cutting said photoelectric converting element array thus formed into a plurality of photoelectric converting element array chips each having a desired size; and a bonding step of bonding at least one said photoelectric conversion element array chip to a supporting member.
Claim 2
Independent Claim
149 words
A method for producing a contact type image sensor comprising: an array forming step of forming a photoelectric converting element array on a flexible substrate, said array forming step comprising the steps of forming continuously a plurality of lower electrodes on said flexible substrate by passing said substrate through a first depositing region, forming continuously an amorphous semiconductor layer on said substrate formed with said lower electrodes by passing said substrate through a second depositing region, and forming continuously an upper electrode on said substrate formed with said lower electrodes and said amorphous semiconductor layer by passing said substrate through a third depositing region; a cutting step of cutting said photoelectric converting element array thus formed into a plurality of photoelectric converting element array chips each having a desired size; and a bonding step of bonding at least one said photoelectric conversion element array chip to a supporting member.
Claim 3
Dependent Claim
60 words
The method as set forth in claim 1 wherein said cutting step includes a testing step for testing the operation of said photoelectric converting elements contained in said photoelectric converting element array, and said array is cut into said chips such that the photoelectric converting elements found to be defective in said testing step are removed during the cutting step.
Claim 4
Dependent Claim
33 words
The method as set forth in claim 1 wherein said bonding step is carried out with said photoelectric converting elements formed on said chip being held on the lower side of the chip.
Claim 5
Dependent Claim
49 words
The method as set forth in claim 3 wherein said supporting member is provided with a plurality of driving circuits, and said bonding step is carried out such that the photoelectric converting elements formed on said chip are electrically connected with said driving circuits through an anisotropic conductive layer.
Claim 6
Dependent Claim
16 words
The method as set forth in claim 4 wherein said flexible substrate is a polyimide film.
Claim 7
Dependent Claim
19 words
The method as set forth in claim 1 wherein said amorphous semiconductor layer is made of amorphous silicon hydride.
Claim 8
Dependent Claim
17 words
The method as set forth in claim 6 wherein said upper electrode is made of indium-tin oxide.
Claim 9
Dependent Claim
17 words
The method as set forth in claim 7 wherein said lower electrode layer is made of chromium.
Claim 10
Dependent Claim
19 words
The method as set forth in claim 1 wherein said amorphous semiconductor layer is made of hydrogenated silicon germanium.
Claim 11
Dependent Claim
17 words
The method as set forth in claim 1 wherein said upper electrode is made of tin oxide.
Claim 12
Dependent Claim
35 words
The method as set forth in claim 1 wherein said lower electrode layer is made of a material selected from nickel (Ni), platinum (Pt), aluminum (Al), palladium (Pd), titanium (Ti), molybdenum (Mo), and tantalum (Ta).
Claim 13
Dependent Claim
20 words
The method as set forth in claim 1 wherein said supporting member is made of glass, ceramic, or stainless steel.
Claim 14
Dependent Claim
32 words
The method as set forth in claim 1 wherein said array forming steps are executed such that a plurality of photoelectric converting element arrays are formed on said flexible substrate in rows.
Claim 15
Dependent Claim
16 words
The method as set forth in claim 1 wherein said supporting member is an inflexible substrate.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-27 | 1990-10-27 | 1991-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-27 | 1994-10-27 | 1995-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-27 | 1998-10-27 | 1999-04-28 | $7700.00 | Window Closed / Lapsed |