Patent US4660175A successfully refreshed from Google Patents.
US4660175A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Data storage device having novel barrier players encapsulating the data storage medium
Assignee: Energy Conversion Devices Inc
•
Filing: 1985-07-08
•
Granted: 1987-04-21
•
Expires: 2005-07-08
Abstract
Abstract Disclosed is a data storage device having a chalcogendata storage medium encapsulated along at least one surface, and preferably both surfaces, by a dielectric barrier layer. The dielectric is compositionally graded in oxygen content with respect to the chalcogen data storage medium. The dielectric is a substantially stoichiometric oxide in proximity to the chalocogen data storage medium, and a substantially non-stoichiometric suboxide remote from the chalcogenide data storage medium. The resulting data storage device is relatively moisture blocking and non-reactive with the chalcogendata storage medium. Also disclosed are methods of making and using the data storage device.
Inventors
- 👤 David Strand
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:34
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/24; G11B7/241; G11B7/252; G11B7/257; G11B7/242; G11B7/243; G11B2007/24302; G11B2007/24316; G11B2007/25705; G11B2007/2571; G11B2007/25715; G11B7/004; G11B7/0045; G11B7/00454; G11B7/253; G11B7/2533
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
75 words
A data storage device comprising a chalcogenide data storage medium, a substrate supporting said data storage medium, and a dielectric film encapsulating the data storage medium and in contact therewith at first interfaces, where the dielectric is compositionally graded in oxygen content with respect to distance from the chalcogenide data storage medium, being substantially stoichiometric oxide at the interface with the chalcogenide data storage medium and being a substantially non-stoichiometric suboxide at its opposite interfaces.
Claim 2
Dependent Claim
75 words
A data storage device comprising a chalcogenide data storage medium, a substrate supporting said data storage medium, and a dielectric film encapsulating the data storage medium and in contact therewith at first interfaces, where the dielectric is compositionally graded in oxygen content with respect to distance from the chalcogenide data storage medium, being substantially stoichiometric oxide at the interface with the chalcogenide data storage medium and being a substantially non-stoichiometric suboxide at its opposite interfaces.
Claim 3
Dependent Claim
18 words
The data storage device of claim 1 wherein the dielectric is substantially continously compositionally graded in oxygen content.
Claim 4
Dependent Claim
15 words
The data storage device of claim 1 wherein the dielectric is layered in oxygen content.
Claim 5
Dependent Claim
13 words
The data storage device of claim 1 wherein the dielectric is germanium oxide.
Claim 6
Dependent Claim
23 words
The data storage device of claim 4 wherein the geramanium oxide is substantially GeO 2 in proximity to the chalcogenide data storage medium.
Claim 7
Dependent Claim
33 words
The data storage device of claim 4 wherein the germanium oxide has the stoichiometry GeO x , where the value of x is from 1.5 to 1.95 at the interfaces with the substrate.
Claim 8
Independent Claim
145 words
A method of doing one or more of writing data into, reading data from, or erasing data from a data storage device comprising a chalcogenide data storage medium, a substrate supporting said chalcogenide data storage medium, and a dielectric film encapsulating the chalcogenide data storage medium, the dielectric being compositionally graded in oxygen content with respect to distance from the chalcogenide data storage medium whereby to be a substantially stoichiometric oxide in proximity to the chalcogenide data storage medium, and a substantially non-stoichiometric suboxide remote from the chalcogenide data storage medium, which method comprises writing data into the data storage medium with electromagnetic energy of a first energy density and duration, reading the state of the data storage medium with electromagnetic energy of a second energy density, and erasing data from the data storage medium with electromagnetic energy of a third energy density and duration.
Claim 9
Independent Claim
145 words
A method of doing one or more of writing data into, reading data from, or erasing data from a data storage device comprising a chalcogenide data storage medium, a substrate supporting said chalcogenide data storage medium, and a dielectric film encapsulating the chalcogenide data storage medium, the dielectric being compositionally graded in oxygen content with respect to distance from the chalcogenide data storage medium whereby to be a substantially stoichiometric oxide in proximity to the chalcogenide data storage medium, and a substantially non-stoichiometric suboxide remote from the chalcogenide data storage medium, which method comprises writing data into the data storage medium with electromagnetic energy of a first energy density and duration, reading the state of the data storage medium with electromagnetic energy of a second energy density, and erasing data from the data storage medium with electromagnetic energy of a third energy density and duration.
Claim 10
Dependent Claim
16 words
The method of claim 7 wherein the dielectric is substantially continuously compositionally graded in oxygen content.
Claim 11
Dependent Claim
13 words
The method of claim 7 wherein the dielectric is layered in oxygen content.
Claim 12
Dependent Claim
11 words
The method of claim 7 wherein the dielectric is germanium oxide.
Claim 13
Dependent Claim
22 words
The method of claim 10 wherein the germanium oxide is substantially stoichiometric GeO 2 in proximity to the chalcogen data storage medium.
Claim 14
Dependent Claim
29 words
The method of claim 10 wherein the germanium oxide has the stoichiometry GeO x , where x is from 1.5 to 1.95 remote from the chalcogenide data storage medium.
Claim 15
Dependent Claim
62 words
A data storage device comprising a chalcogenide data storage medium, a substrate supporting said data storage medium, and a dielectric film encapsulating the data storage medium, where the dielectric is compositionally graded with respect to distance from the chalcogenide data storage medium, being substantially stoichiometric at its interface with the chalcogenide data storage medium and being substantially non-stoichiometric at its opposite interface.
Claim 16
Dependent Claim
62 words
A data storage device comprising a chalcogenide data storage medium, a substrate supporting said data storage medium, and a dielectric film encapsulating the data storage medium, where the dielectric is compositionally graded with respect to distance from the chalcogenide data storage medium, being substantially stoichiometric at its interface with the chalcogenide data storage medium and being substantially non-stoichiometric at its opposite interface.
Claim 17
Dependent Claim
15 words
The data storage device of claim 13 wherein the dielectric is substantially continously compositionally graded.
Claim 18
Dependent Claim
12 words
The data storage device of claim 13 wherein the dielectric is layered.
Claim 19
Dependent Claim
24 words
The data storage device of claim 13 wherein the dielectric is chosen from the group consisting of silicon nitrides, silica, alumina, and mixtures thereof.
References Cited (Backward Citations)
US3626386A
Cited
US3778785A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-20 | 1990-10-20 | 1991-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-20 | 1994-10-20 | 1995-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-20 | 1998-10-20 | 1999-04-21 | $7700.00 | Window Closed / Lapsed |