Abstract A process for enhanced formation of vias in multilevel conductive structures for integrated circuit devices. A semiconductor wafer, bearing a multilayered first level metalization characterized by a tungsten alloy top layer, is annealed in a suitable ambient so as to form a distinctly colored superficial film atop the first level metalization. The interlevel dielectric is then deposited and subsequently selectively dry etched until the film becomes discernible, the film itself serving as an etch stop so as to protect the top layer of the first level metalization. Exposed portions of the superficial film are then removed through a standard plasma etch step. Remaining areas of the film promote intimate binding between the first level metalization and the interlevel dielectric.
A method for enhanced formation of vias in an integrated circuit device that includes a multilayer metalization level characterized by a top layer comprising a tungsten alloy, the method comprising the steps of: (a) heating the device to a temperature of approximately 400° C. in a substantially inert ambient containing traces of oxygen or nitrogen for a period of time sufficient to develop a thin, superficial, distinctly colored film atop the tungsten alloy layer, (b) laying an interlevel dielectric layer atop the superficial layer, (c) etching away predetermined portions of the interlevel dielectric to a depth sufficient to expose the colored superficial layer, and (d) etching away the exposed portions of the superficial layer in a plasma etch.
Claim 2
Independent Claim
118 words
A method for enhanced formation of vias in an integrated circuit device that includes a multilayer metalization level characterized by a top layer comprising a tungsten alloy, the method comprising the steps of: (a) heating the device to a temperature of approximately 400° C. in a substantially inert ambient containing traces of oxygen or nitrogen for a period of time sufficient to develop a thin, superficial, distinctly colored film atop the tungsten alloy layer, (b) laying an interlevel dielectric layer atop the superficial layer, (c) etching away predetermined portions of the interlevel dielectric to a depth sufficient to expose the colored superficial layer, and (d) etching away the exposed portions of the superficial layer in a plasma etch.
Claim 3
Dependent Claim
20 words
A method as defined in claim 1 wherein the superficial layer is etched in CHF 3 and O 2 .