JPS5239385A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Process for production of semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1975-09-25
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Granted: —
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Expires: 1995-09-25
Abstract
Abstract PURPOSE: To make good ohmic contact between wiring layers by forming intermediate metallic layer whose etching speed is faster than that of the wiring material. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Shinichi Miyashita
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-27 05:32
CPC Classifications
—
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