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US4657844A Expired / Lapsed US ⏱️ 0.0 years remaining

Plasma developable negative resist compositions for electron beam, X-ray and optical lithography

Assignee: Texas Instruments Inc
•
Filing: 1985-05-14
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Granted: 1987-04-14
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Expires: 2005-05-14
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Abstract

Abstract A negative resist composition including a polymeric matrix material, a polymerizable monomer, and an onium salt radiation sensitive initiator. The monomer is polymerized by irradiating the resist with an e-beam, x-ray, or ultraviolet source and heating the exposed resist. The resist is developed by a dry etchant such as plasma or a reactive ion etchant.

Inventors

  • 👤 Jing S. Shu
  • 👤 Johnny B. Covington
  • 👤 Wei Lee
  • 👤 Larry G. Venable
  • 👤 Gilbert L. Varnell

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 18:41
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/027; G03F7/028; G03F7/029; G03F7/032; G03F7/033; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/106; Y10S430/11; Y10S430/114; Y10S430/115; Y10S430/122; Y10S430/126

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 82 words
A method of forming a patterned, high resolution, radiation sensitive negative resist comprising the steps of: forming a thin film of a negative resist composition in cyclopentanone as a solvent comprising poly(vinyl formal), 4,4'-dibutyldiphenyl-iodonium hexafluoroantimonate, and vinyl carbazole; selectively exposing said thin film to a predetermined pattern of x-ray, e-beam, or ultraviolet radiation; heating the irradiated film; and developing the resist image by exposing said film to oxygen plasma, which selectively removes the areas of the film unexposed to the ultraviolet radiation.
Claim 2
Independent Claim 82 words
A method of forming a patterned, high resolution, radiation sensitive negative resist comprising the steps of: forming a thin film of a negative resist composition in cyclopentanone as a solvent comprising poly(vinyl formal), 4,4'-dibutyldiphenyl-iodonium hexafluoroantimonate, and vinyl carbazole; selectively exposing said thin film to a predetermined pattern of x-ray, e-beam, or ultraviolet radiation; heating the irradiated film; and developing the resist image by exposing said film to oxygen plasma, which selectively removes the areas of the film unexposed to the ultraviolet radiation.

References Cited (Backward Citations)

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US4136102A Cited
US4161405A Cited
US4264703A Cited
US4423136A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-04-13 1990-10-13 1991-04-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-04-13 1994-10-13 1995-04-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-04-13 1998-10-13 1999-04-14 $7700.00 Window Closed / Lapsed

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