← Back to Patent Explorer
US4655875A Expired / Lapsed US ⏱️ 0.0 years remaining

Ion implantation process

Assignee: Hitachi Ltd
•
Filing: 1986-03-04
•
Granted: 1987-04-07
•
Expires: 2006-03-04
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Ions having a high energy is implanted using a mask of a stacked film consisting of a film formed from an amorphous material and a film formed from a metal having a large mass number. In this way, penetration of ions can be prohibited by a mask having a far smaller thickness than that of the conventional mask. Thus ions having a high energy can be implanted with a very high accuracy.

Inventors

  • 👤 Yasuo Wada
  • 👤 Masao Tamura
  • 👤 Nobuyoshi Natsuaki
  • 👤 Kiyonori Ohyu

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 17:06
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/22; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 73 words
An ion implantation process comprising the steps of forming a stacked film of a second film formed from an amorphous material and a first film formed from a metal having a large mass number on a substrate to be ion-implanted, selectively removing a desired portion(s) of at least said first film to form an opening(s), and implanting ions with an energy of about 500 keV or more through said opening(s) in said substrate.
Claim 2
Dependent Claim 73 words
An ion implantation process comprising the steps of forming a stacked film of a second film formed from an amorphous material and a first film formed from a metal having a large mass number on a substrate to be ion-implanted, selectively removing a desired portion(s) of at least said first film to form an opening(s), and implanting ions with an energy of about 500 keV or more through said opening(s) in said substrate.
Claim 3
Dependent Claim 25 words
An ion implantation process as claimed in claim 1, wherein said ion implantation is applied after removal of said desired portion(s) of said second film.
Claim 4
Dependent Claim 25 words
An ion implantation process as claimed in claim 1, wherein said ion implantation is applied without removal of said desired portion(s) of said second film.
Claim 5
Dependent Claim 22 words
An ion implantation process as claimed in claim 1, wherein said metal is one having a mass number of 45 or more.
Claim 6
Dependent Claim 53 words
An ion implantation process as claimed in claim 1, wherein said first film has at least a thickness expressed by the following equation: ##EQU3## wherein t is a thickness (μm) of said first film, E is an acceleration energy (MeV) of ions, and k is a constant dependent on the kind of ions.
Claim 7
Dependent Claim 33 words
An ion implantation process as claimed in claim 5, wherein the value of said k is 0.9 for boron ions, 0.45 for phosphorus ions, 0.32 for arsenic ions, and 0.53 for silicon ions.
Claim 8
Dependent Claim 31 words
An ion implantation process as claimed in claim 1, wherein said metal is at least one member selected from the group consisting of tungsten, molybdenum, titanium, tantalum, gold, platinum, and lead.
Claim 9
Dependent Claim 43 words
An ion implantation process as claimed in claim 1, wherein said second film has at least a thickness expressed by the following equation: ##EQU4## wherein t' is a thickness of said second film (μm) and M is a mass number of implanted ions.
Claim 10
Dependent Claim 36 words
An ion implantation process as claimed in claim 1, wherein said amorphous material is at least one member selected from the group consisting of silicon dioxide, silicon nitride, phosphosilicate glass, organic high polymer resins, and resists.
Claim 11
Dependent Claim 24 words
An ion implantation process as claimed in claim 1, wherein said opening(s) is formed by reactive ion, micro-wave plasma, photo-excited plasma, or radical etching.

References Cited (Backward Citations)

US4441931A Cited
US4523369A Cited
US4515654A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-04-06 1990-10-06 1991-04-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-04-06 1994-10-06 1995-04-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-04-06 1998-10-06 1999-04-07 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag