Blooming control in CCD image sensors

Claim 2

A CCD image area sensor including a plurality of transfer electrodes arranged in sequence, means for applying phase-related voltages to said plurality of transfer electrodes to cause charge to be transferred sequentially between potential wells underlying said transfer electrodes, said image sensor having a plurality of sensing elements, each such sensing element including a doped semiconductor substrate, an insulator layer over the semiconductor substrate and an electrode on the insulator layer which when a potential is applied to it creates a potential well in the bulk of the substrate which collects charge produced by a photoelectric process, characterized by: the insulator having a thin portion selected so as to allow excess charge collected in the well to tunnel through the thin portion to the electrode and thereby prevent blooming.

Claim 3

In a CCD image area sensor including a plurality of transfer electrodes arranged in sequence, means for applying phase-related voltages to said plurality of transfer electrodes to cause charge to be transferred sequentially between potential wells underlying said transfer electrodes, said image sensor having a substrate and an insulator overlying the substrate and an electrode overlying the insulator which when a potential is applied to the electrode forms a potential well in the substrate, the improvement comprising: a portion of the insulating layer being formed thin enough so that when excess charge is collected in the potential well the field through the thin portion is increased to the extent that such excess charge can tunnel into the conduction band of the insulator and out through the electrode to thereby prevent blooming.

Claim 4

In a CCD image area sensor including a plurality of transfer electrodes arranged in sequence, means for applying phase-related voltages to said plurality of transfer electrodes to cause charge to be transferred sequentially between potential wells underlying said transfer electrodes, said image sensor having a substrate and an insulator overlying the substrate and an electrode overlying the insulator which when a potential is applied to the electrode forms a potential well in the substrate, the improvement comprising: a portion of the insulating layer being formed thin enough so that when excess charge is collected in the potential well the field through the thin portion is increased to the extent that such excess charge can tunnel into the conduction band of the insulator and out through the electrode to thereby prevent blooming.

Claim 5

The invention as set forth in claim 2 wherein such insulating layer is silicon dioxide and wherein the substrate is doped such that a layer of the substrate adjacent to the insulating layer has a plurality opposite to that of the substrate bulk.

Claim 6

A CCD image area sensor including a plurality of transfer electrodes arranged in sequence, means for applying phase-related voltages to said plurality of transfer electrodes to cause charge to be transferred sequentially between potential wells underlying said transfer electrodes, said image sensor having a plurality of sensing elements, each such sensing element including a doped semiconductor substate, an insulator layer over the semiconductor substrate, and an electrode on the insulator layer which when a potential is applied to it creates a potential well in the bulk of the substrate which collects charge produced by a photoelectric conversion process, characterized by the insulator layer having two regions of different thicknesses selected such that when the well collects excess charge, a sufficient high field is formed only in the region of the insulator layer where the layer is thinner so that the excess charge tunnels into the conduction band of the insulator and out through the electrode to prevent blooming.

Claim 7

A CCD image area sensor including a plurality of transfer electrodes arranged in sequence, means for applying phase-related voltages to said plurality of transfer electrodes to cause charge to be transferred sequentially between potential wells underlying said transfer electrodes, said image sensor having a plurality of sensing elements, each such sensing element including a doped semiconductor substate, an insulator layer over the semiconductor substrate, and an electrode on the insulator layer which when a potential is applied to it creates a potential well in the bulk of the substrate which collects charge produced by a photoelectric conversion process, characterized by the insulator layer having two regions of different thicknesses selected such that when the well collects excess charge, a sufficient high field is formed only in the region of the insulator layer where the layer is thinner so that the excess charge tunnels into the conduction band of the insulator and out through the electrode to prevent blooming.