Process for preparation of ceramic film

Claim 2

A process for preparing a ceramic film, which comprises: producing ultrafine particles of ceramic by a vapor phase reaction; providing a temperature gradient between a vapor phase and a substrate by holding the substrate at a temperature lower than that of the vapor phase where the ultrafine particles are produced, but high enough to allow the vapor phase reaction to proceed, allowing the ultrafine particles produced in the vapor phase to be deposited onto the substrate by a thermophoretic phenomenon; and allowing the vapor phase reaction to proceed on the ultrafine particles deposited on the substrate.

Claim 3

A process for preparing a ceramic film as claimed in claim 1, wherein the average temperature gradient formed between the vapor phase and the substrate is 10° C./cm or more.

Claim 4

A process for preparing a ceramic film as claimed in claim 1, wherein the diameter of the ultrafine particles produced in the vapor phase is 4000 Å or less.

Claim 5

A process for preparing a ceramic film as claimed in claim 1, wherein the diameter of the voids formed in the ceramic porous film is 4000 Å or less.

Claim 6

A process for preparing a ceramic film, which comprises: producing ultrafine particles of ceramic in a vapor phase by a vapor phase reaction; depositing the ultrafine particles produced in the vapor phase onto a substrate utilizing a thermophoretic phenomenon by forming a temperature gradient between the vapor phase and the substrate, while keeping the substrate at a temperature which is lower than the temperature of the vapor phase where the ultrafine particles are being produced, but is capable of allowing the vapor phase reaction to proceed; further allowing the vapor phase reaction to proceed on the ultrafine particles deposited on the substrate to form a ceramic film, and thereafter preventing the ultrafine particles from being deposited onto the substrate by at least one of (1) raising the temperature of the substrate to a temperature higher than that of the vapor phase, (2) lowering the temperature of the vapor phase to terminate the thermophoretic phenomenon and (3) lowering the concentration of the reactive materials in the vapor phase to terminate the production of the ultrafine particles in the vapor phase, while allowing the vapor reaction to proceed within the formed ceramic film to lower the content of voids of the film.

Claim 7

A process for preparing a ceramic film, which comprises: producing ultrafine particles of ceramic in a vapor phase by a vapor phase reaction; depositing the ultrafine particles produced in the vapor phase onto a substrate utilizing a thermophoretic phenomenon by forming a temperature gradient between the vapor phase and the substrate, while keeping the substrate at a temperature which is lower than the temperature of the vapor phase where the ultrafine particles are being produced, but is capable of allowing the vapor phase reaction to proceed; further allowing the vapor phase reaction to proceed on the ultrafine particles deposited on the substrate to form a ceramic film, and thereafter preventing the ultrafine particles from being deposited onto the substrate by at least one of (1) raising the temperature of the substrate to a temperature higher than that of the vapor phase, (2) lowering the temperature of the vapor phase to terminate the thermophoretic phenomenon and (3) lowering the concentration of the reactive materials in the vapor phase to terminate the production of the ultrafine particles in the vapor phase, while allowing the vapor reaction to proceed within the formed ceramic film to lower the content of voids of the film.

Claim 8

A process for preparing a ceramic film as claimed in claim 5, wherein the average temperature gradient formed between the vapor phase and the substrate is 10° C./cm or more.

Claim 9

A process for preparing a ceramic film as claimed in claim 5, wherein the diameter of the ultrafine particles produced in the vapor phase is 4000 Å or less.

Claim 10

A process for preparing a ceramic film as claimed in claim 5, wherein the diameter of the voids formed in the ceramic porous film is 4000 Å or less.

Claim 11

A process for preparing a ceramic film, which comprises: placing a substrate inside a vessel; continuously feeding at least one stream of reactant gas effective to produce a ceramic into said vessel and directing said stream toward said substrate, said stream being heated to a first temperature effective to cause a vapor phase reaction that produces ultrafine particles of ceramic in the vapor phase, maintaining said substrate at a second temperature which is lower than said first temperature and provides a temperature gradient of at least 10° C./cm between said vapor phase and said substrate so that the ultrafine particles are transported to and deposited on said substrate by thermophoresis whereby to form a film of said ultrafine particles on said substrate, said second temperature being sufficiently high that the vapor phase reaction can continue in contact with said film; stopping transport and deposition of the ultrafine particles on the substrate while maintaining the temperature of said substrate and the flow of reactant gas at levels effective to cause the vapor phase reaction to proceed in contact with the surfaces of the ultrafine particles within the film after the film has been formed on said substrate whereby to increase the density of the film by filling the voids in the film.

Claim 12

A process for preparing a ceramic film, which comprises: placing a substrate inside a vessel; continuously feeding at least one stream of reactant gas effective to produce a ceramic into said vessel and directing said stream toward said substrate, said stream being heated to a first temperature effective to cause a vapor phase reaction that produces ultrafine particles of ceramic in the vapor phase, maintaining said substrate at a second temperature which is lower than said first temperature and provides a temperature gradient of at least 10° C./cm between said vapor phase and said substrate so that the ultrafine particles are transported to and deposited on said substrate by thermophoresis whereby to form a film of said ultrafine particles on said substrate, said second temperature being sufficiently high that the vapor phase reaction can continue in contact with said film; stopping transport and deposition of the ultrafine particles on the substrate while maintaining the temperature of said substrate and the flow of reactant gas at levels effective to cause the vapor phase reaction to proceed in contact with the surfaces of the ultrafine particles within the film after the film has been formed on said substrate whereby to increase the density of the film by filling the voids in the film.