US4654112A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Oxide etch
Assignee: Texas Instruments Inc
•
Filing: 1984-09-26
•
Granted: 1987-03-31
•
Expires: 2004-09-26
Abstract
Abstract A new process for plasma etching silicon oxides in integrated circuit structures. A chemistry comprising both oxygen and nitrogen trifluoride is used, with oxygen the dominant component. This provides excellent selectivity to silicon. This etch chemistry also erodes photoresist rapidly, so that it is typically used in combination with a hard-masking process. One particular application of this invention is in a cantilever-etch-mask contact profiling process.
Inventors
- 👤 Monte A. Douglas
- 👤 Thomas D. Bonifield
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:06
CPC Classifications
C; C03; C03C; C03C15/00; G; G03; G03F; G03F7/00; G03F7/26; G03F7/36; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
69 words
A process for etching silicon oxides in integrated circuit structures, comprising the steps of: providing a partially fabricated integrated circuit structure having at the surface thereof a dielectric comprising silicon oxides; partially covering said dielectric with a patterned hardmask; and exposing said integrated circuit structure to a plasma in a gas comprising both oxygen and nitrogen trifluoride, the input gas to said plasma comprising more oxygen than nitrogen trifluoride.
Claim 2
Dependent Claim
69 words
A process for etching silicon oxides in integrated circuit structures, comprising the steps of: providing a partially fabricated integrated circuit structure having at the surface thereof a dielectric comprising silicon oxides; partially covering said dielectric with a patterned hardmask; and exposing said integrated circuit structure to a plasma in a gas comprising both oxygen and nitrogen trifluoride, the input gas to said plasma comprising more oxygen than nitrogen trifluoride.
Claim 3
Dependent Claim
26 words
The process of claim 1, wherein said plasma is generated in a gas having a total pressure in a range between 30 microns and 500 microns.
Claim 4
Dependent Claim
19 words
The process of claim 1, wherein said plasma includes more than four times as much oxygen as nitrogen trifluoride.
Claim 5
Dependent Claim
28 words
The process of claim 1, wherein said plasma generation step comprises applying power at an area density in the range between 1 and 0.05 watts per square centimeter.
Claim 6
Dependent Claim
40 words
The process of claim 1, wherein said plasma generating step comprises applying power at a volumetric density between 1 and 10 watts per liter into said gas mixture in the vicinity of said partially fabricated integrated within a reactor chamber.
Claim 7
Dependent Claim
12 words
The process of claim 1, wherein said hardmask consists essentially of polysilicon.
Claim 8
Dependent Claim
13 words
The process of claim 1, wherein said dielectric consists essentially of phosphosilicate glass.
Claim 9
Dependent Claim
12 words
The process of claim 1, wherein said hard mask layer comprises silicon.
Claim 10
Dependent Claim
11 words
The process of claim 1, wherein said dielectric comprises borophosphosilicate glass.
Claim 11
Dependent Claim
107 words
A process for fabricating contacts in integrated circuits, comprising the steps of: providing a partially fabricated integrated circuit structure having at the surface thereof a dielectric comprising silicon oxides; depositing a hard mask layer comprising silicon over said dielectric; etching said hard mask layer in a predetermined pattern to cut holes in said hard mask layer at predetermined contact locations; exposing said integrated circuit structure to a plasma in a gas comprising both oxygen and nitrogen trifluoride, said gas comprising more oxygen than nitrogen trifluoride, to open contact holes in said dielectric; and depositing a patterned conductor to interconnect said contact holes in a predetermined circuit configuration.
Claim 12
Dependent Claim
107 words
A process for fabricating contacts in integrated circuits, comprising the steps of: providing a partially fabricated integrated circuit structure having at the surface thereof a dielectric comprising silicon oxides; depositing a hard mask layer comprising silicon over said dielectric; etching said hard mask layer in a predetermined pattern to cut holes in said hard mask layer at predetermined contact locations; exposing said integrated circuit structure to a plasma in a gas comprising both oxygen and nitrogen trifluoride, said gas comprising more oxygen than nitrogen trifluoride, to open contact holes in said dielectric; and depositing a patterned conductor to interconnect said contact holes in a predetermined circuit configuration.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-30 | 1990-09-29 | 1991-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-30 | 1994-09-29 | 1995-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-30 | 1998-09-29 | 1999-03-31 | $7700.00 | Window Closed / Lapsed |