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Patent US4650698A successfully refreshed from Google Patents.
US4650698A
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Method of forming a thin film of a metal or metal compound on a substrate
Assignee: Toshiba Corp
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Filing: 1985-09-26
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Granted: 1987-03-17
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Expires: 2005-09-26
Abstract
Abstract A method of forming with good reproducibility a high-quality thin film of a metal or metal compound by a vapor growth method on a substrate placed in a quartz reaction tube which has the steps of, prior to the formation of the thin film forming an intermediate film of a material having good adhesion with both quartz, and the metal or metal compound on the inner wall of the reaction tube, and forming a film of the metal or metal compound for the thin film on the intermediate film.
Inventors
- 👤 Takahiko Moriya
- 👤 Saburo Nakada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 03:57
CPC Classifications
C; C03; C03C; C03C17/00; C03C17/34; C03C17/36; C03C17/3602; C03C17/3607; C03C17/3636; C03C17/3649; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/44; C23C16/4401; C23C16/4404; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
109 words
A method for forming a thin film of a metal or a metal compound on a substrate comprising Ge, GeAs, Si or sapphire, comprising the sequential steps of forming an intermediate film consisting of one of silicon or a metal silicide on an inner wall of a quartz reaction tube through a vapor growth method; then forming a film of the metal or metal compound other than that of said intermediate film on said intermediate film through a vapor growth method; and thereafter disposing said substrate in said reaction tube; and forming the thin film of the metal or metal compound by a vapor growth method on said substrate.
Claim 2
Independent Claim
109 words
A method for forming a thin film of a metal or a metal compound on a substrate comprising Ge, GeAs, Si or sapphire, comprising the sequential steps of forming an intermediate film consisting of one of silicon or a metal silicide on an inner wall of a quartz reaction tube through a vapor growth method; then forming a film of the metal or metal compound other than that of said intermediate film on said intermediate film through a vapor growth method; and thereafter disposing said substrate in said reaction tube; and forming the thin film of the metal or metal compound by a vapor growth method on said substrate.
Claim 3
Dependent Claim
26 words
A method according to claim 1, wherein the metal silicide is a material selected from the group consisting of tungsten silicide, molybdenum silicide and titanium silicide.
Claim 4
Dependent Claim
52 words
A method according to claim 1, wherein said intermediate film comprises a two-layer structure having a first film of a material having good adhesion with quartz and a second film of a material having good adhesion with the metal or metal compound, said first film being sufficiently adhered to said second film.
Claim 5
Dependent Claim
24 words
A method according to claim 1, wherein the metal is a member selected from the group consisting of tungsten, molybdenum, tantalum, titanium and aluminum.
Claim 6
Dependent Claim
28 words
A method according to claim 1, wherein the metal compound is a member selected from the group consisting of tungsten silicide, molybdenum silicide, tantalum silicide and titanium silicide.
Claim 7
Dependent Claim
12 words
The method of claim 1 wherein said intermediate film consists of silicon.
Claim 8
Dependent Claim
21 words
The method of claim 6, wherein said metal is selected from the group consisting of tungsten, molybdenum, tantalum, titanium and aluminum.
Claim 9
Dependent Claim
25 words
The method of claim 6, wherein the metal compound is selected from the group consisting of tungsten silicide, molybdenum silicide, tantalum silicide and titanium silicide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-16 | 1990-09-15 | 1991-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-16 | 1994-09-15 | 1995-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-16 | 1998-09-15 | 1999-03-17 | $7700.00 | Window Closed / Lapsed |