Multiple-input sense amplifier with two CMOS differential stages driving a high-gain stage

Claim 2

A multiple input sense amplifier arrangement, for a CMOS memory, comprising a differential sense amplifier means (73') responsive to complementary input signals at its inputs provided by respective input stages (71, 72) receiving input signals (33) and complementary input signals (33'), wherein each of said respective input stages (71, 72) includes a plurality of input-gate-driven n-channel MOS transistors (79, 79') corresponding to the number of multiple inputs to said sense amplifier arrangement, and a p-channel MOS transistor (89', 99') connected at its source to a power supply potential (VCC) and connected at its drain and gate to an input transistor (81,83) of said differential sense amplifier means (73') and directly to the drains of said plurality of n-channel MOS transistors (79, 79').

Claim 3

The arrangement of claim 1, characterized by each of said input stages further comprising a plurality of the same number of input gate driven n-channel MOS transistors, and a respective p-channel MOS transistor connected by its source to VCC, and connected at its gate and drain to a respective input of said differential sense amplifier means and to the drains of said plurality of n-channel MOS transistors.

Claim 4

The arrangement of claim 1, wherein said differential sense amplifier means includes a high gain stage.

Claim 5

A multiple input sense amplifier arrangement, for a CMOS memory, comprising a differential sense amplifier means (73') responsive to complementary input signals provided by first and second input stages (71, 72) receiving input signals (33) and a reference signal providing a selected bias voltage level, respectively, wherein the respective input stages (71, 72) includes for the first input stage a plurality of input-gate-driven n-channel MOS transistors (79) corresponding to the number of multiple inputs to said sense amplifier arrangement, and a p-channel MOS transistor (89') connected at its source to a power supply potential (VCC) and connected at its drain and gate to an input transistor (81) of said differential sense amplifier means (73') and to the drains of said plurality of n-channel MOS transistors (79), and for the second input stage wherein the complementary input signal to said differential sense amplifier means (73') is provided, there is included a gate-to-drain-connected p-channel MOS transistor (99') having a source connected to VCC and a gate and drain connected to the drain of an n-channel MOS transistor (79') having a source connected to ground and driven at its gate by said selected bias voltage level.

Claim 6

A multiple input sense amplifier arrangement, for a CMOS memory, comprising a differential sense amplifier means (73') responsive to complementary input signals provided by first and second input stages (71, 72) receiving input signals (33) and a reference signal providing a selected bias voltage level, respectively, wherein the respective input stages (71, 72) includes for the first input stage a plurality of input-gate-driven n-channel MOS transistors (79) corresponding to the number of multiple inputs to said sense amplifier arrangement, and a p-channel MOS transistor (89') connected at its source to a power supply potential (VCC) and connected at its drain and gate to an input transistor (81) of said differential sense amplifier means (73') and to the drains of said plurality of n-channel MOS transistors (79), and for the second input stage wherein the complementary input signal to said differential sense amplifier means (73') is provided, there is included a gate-to-drain-connected p-channel MOS transistor (99') having a source connected to VCC and a gate and drain connected to the drain of an n-channel MOS transistor (79') having a source connected to ground and driven at its gate by said selected bias voltage level.

Claim 7

The arrangement of claim 4, wherein the drains of said MOS transistors (79', 99'), connected in common for providing the complementary input signals, are connected to ground through a capacitor (89) sized in order to match the capacitance of the second input stage (72) of which it forms a part to the capacitance of the first input stage (71) of said sense amplifier (73').