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US4647338A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a treatment in a reaction gas

Assignee: US Philips Corp
•
Filing: 1985-07-29
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Granted: 1987-03-03
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Expires: 2005-07-29
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Abstract

Abstract A method of manufacturing a semiconductor device, in which a semiconductor substrate (1) is subjected to a surface treatment in a reactor vessel (2), through which a current (3) of a reaction gas is passed and is then pumped away by means of a mechanical pump (14) and a cooling trap (15) arranged between this pump (14) and the reactor vessel (2). The current of reaction gas (3) consists of a current (Q c ) of gas condensable in the cooling trap (15) and a current (Q i ) of an inert gas. According to the invention, a separate current (Q x ) of an inert gas is conducted to the mechanical pump (14). This current (Q x ) is practically equally as large as the current of condensable gas (Q c ). Thus, a method is obtained, in which the partial pressure of the inert gas (P i ) and that of the condensable gas (P c ) in the reactor gas can be controlled to the optimum and separately.

Inventors

  • 👤 Jan Visser

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 22:14
CPC Classifications
B; B01; B01D; B01D8/00; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4412; C23C16/455; C23F; C23F4/00; Y; Y10; Y10S; Y10S438/00; Y10S438/935

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 116 words
A method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a surface treatment in a reactor vessel, through which a current of a reaction gas is passed and is then pumped away by means of a mechanical pump and a cooling trap arranged between this pump and the reactor vessel, the current of reaction gas consisting of a current of gas condensable in the cooling trap and a current of inert gas not condensable in the cooling trap, characterized in that there is conducted to the mechanical pump a separate current of an inert gas which is substantially equally as large as the current of gas condensable in the cooling trap.
Claim 2
Independent Claim 116 words
A method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a surface treatment in a reactor vessel, through which a current of a reaction gas is passed and is then pumped away by means of a mechanical pump and a cooling trap arranged between this pump and the reactor vessel, the current of reaction gas consisting of a current of gas condensable in the cooling trap and a current of inert gas not condensable in the cooling trap, characterized in that there is conducted to the mechanical pump a separate current of an inert gas which is substantially equally as large as the current of gas condensable in the cooling trap.
Claim 3
Dependent Claim 20 words
A method as claimed in claim 1, characterized in that the cooling trap is cooled by means of liquid nitrogen.
Claim 4
Dependent Claim 30 words
A method as claimed in claim 1 or 2, characterized in that the inert gas conducted to the mechanical pump consists of helium, argon or nitrogen or a mixture thereof.
Claim 5
Independent Claim 49 words
A method as claimed in claims 1 or 2, characterized in that the surface treatment is an etching treatment and in that as condensable gas a mixture of CCl 4 or BCl 3 and Cl 2 and as inert gas helium or argon is introduced into the reactor vessel.
Claim 6
Dependent Claim 22 words
A method as claimed in claim 4, characterized in that the overall pressure in the reactor vessel is 0.1 to 10 Torr.
Claim 7
Dependent Claim 47 words
A method as claimed in claim 3, characterized in that the surface treatment is an etching treatment and in that as condensable gas a mixture of CCl 4 or BCl 3 and Cl 2 and as inert gas helium or argon is introduced into the reactor vessel.
Claim 8
Dependent Claim 22 words
A method as claimed in claim 6, characterized in that the overall pressure in the reactor vessel is 0.1 to 10 Torr.

References Cited (Backward Citations)

US4371412A Cited
US4401507A Cited
JPS5955022A Cited
US4551197A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-03-02 1990-09-01 1991-03-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-03-02 1994-09-01 1995-03-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-03-02 1998-09-01 1999-03-03 $7700.00 Window Closed / Lapsed

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