Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
192 words
A subsurface Zener diode comprising: (a) a semiconductor; (b) spaced apart cathode and first anode regions of opposite type conductivity formed in the semiconductor, such regions having opposing surface portions, one of the spaced apart regions having an opposing surface portion thereof formed with a portion which protrudes towards the opposing surface portion of the other one of the spaced apart regions; (c) a second anode region laterally spaced from the cathode and first anode regions, the first and second anode regions being disposed along a first axis, the cathode region being disposed between the first and second anode regions and being elongated along a second axis intersecting the first axis, with ends of such elongated cathode region extending beyond the first and second anode regions; and (d) a buried region, having conductivity type the same as the first and second anode regions, disposed beneath a surface of the semiconductor, such buried region extending laterally through the first and second anode regions and cathode region, such buried region being elongated along the second axis and having an end which extends beyond a corresponding one of the ends of the elongated cathode region.
Claim 2
Dependent Claim
192 words
A subsurface Zener diode comprising: (a) a semiconductor; (b) spaced apart cathode and first anode regions of opposite type conductivity formed in the semiconductor, such regions having opposing surface portions, one of the spaced apart regions having an opposing surface portion thereof formed with a portion which protrudes towards the opposing surface portion of the other one of the spaced apart regions; (c) a second anode region laterally spaced from the cathode and first anode regions, the first and second anode regions being disposed along a first axis, the cathode region being disposed between the first and second anode regions and being elongated along a second axis intersecting the first axis, with ends of such elongated cathode region extending beyond the first and second anode regions; and (d) a buried region, having conductivity type the same as the first and second anode regions, disposed beneath a surface of the semiconductor, such buried region extending laterally through the first and second anode regions and cathode region, such buried region being elongated along the second axis and having an end which extends beyond a corresponding one of the ends of the elongated cathode region.
Claim 3
Dependent Claim
12 words
The diode recited in claim 1 wherein the protruding portion is pointed.
Claim 4
Dependent Claim
27 words
The diode recited in claim 1 wherein the first anode region provides a force anode and the second anode region provides a sense anode for such diode.
Claim 5
Dependent Claim
18 words
The diode recited in claim 1 wherein said second axis is disposed substantially perpendicular to said first axis.
Claim 6
Dependent Claim
141 words
In combination: (a) a semiconductor; (b) a pair of laterally spaced apart anode regions formed in the semiconductor, such pair of anode regions having a first conductivity type and being disposed along a first axis; (c) a cathode region formed in the semiconductor and disposed between the pair of anode regions, the cathode region having a second conductivity type opposite the first conductivity type, the cathode being elongated along a second axis intersecting the first axis, with an end of such elongated cathode region extending beyond the pair of anode regions; and (d) a buried region, having the first conductivity type, disposed beneath a surface of the semiconductor and extending laterally through the cathode and pair of anode regions, said buried region being elongated along the second axis and having an end extending beyond the end of the elongated cathode region.
Claim 7
Dependent Claim
141 words
In combination: (a) a semiconductor; (b) a pair of laterally spaced apart anode regions formed in the semiconductor, such pair of anode regions having a first conductivity type and being disposed along a first axis; (c) a cathode region formed in the semiconductor and disposed between the pair of anode regions, the cathode region having a second conductivity type opposite the first conductivity type, the cathode being elongated along a second axis intersecting the first axis, with an end of such elongated cathode region extending beyond the pair of anode regions; and (d) a buried region, having the first conductivity type, disposed beneath a surface of the semiconductor and extending laterally through the cathode and pair of anode regions, said buried region being elongated along the second axis and having an end extending beyond the end of the elongated cathode region.