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US4644379A
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Semiconductor component for generation of optical radiation
Assignee: ABB Norden Holding AB
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Filing: 1984-12-04
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Granted: 1987-02-17
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Expires: 2004-12-04
Abstract
Abstract A semiconductor component for electrical generation of optical radiation, for example an LED, is provided. The component includes a semiconductor body that contains a first region of material of a first conductivity, a second region of material of a second conductivity type adjacent to the first region; and a PN junction between these regions. The first region has a central part of a material with a first band gap and a peripheral part laterally surrounding the central part of the first region. The material of the peripheral part has a band gap larger than the bang gap of the central part of the first region. The material of the second region has a larger band gap than the band gap of the central part of the first region.
Inventors
- 👤 Tomas Hidman
- 👤 Christer Ovren
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:11
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H10H20/811; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
147 words
In a semiconductor component for the generation of optical radiation when electrically energized, which component comprises a semiconductor body with: a first region of material of a first conductivity type; a second region of material of a second conductivity type adjacent said first region; a PN junction between said first and second regions; said PN junction having a central part; contact means for supplying a current to said component; means for restricting current flow through the component to said central part of said PN junction; wherein the first region has a central part of a material with a first band gap and a peripheral part laterally surrounding said central part of said first region, the material of said peripheral part having a band gap larger than said first band gap, and the material of said second region having a larger band gap than said first band gap.
Claim 2
Dependent Claim
147 words
In a semiconductor component for the generation of optical radiation when electrically energized, which component comprises a semiconductor body with: a first region of material of a first conductivity type; a second region of material of a second conductivity type adjacent said first region; a PN junction between said first and second regions; said PN junction having a central part; contact means for supplying a current to said component; means for restricting current flow through the component to said central part of said PN junction; wherein the first region has a central part of a material with a first band gap and a peripheral part laterally surrounding said central part of said first region, the material of said peripheral part having a band gap larger than said first band gap, and the material of said second region having a larger band gap than said first band gap.
Claim 3
Dependent Claim
94 words
A semiconductor component according to claim 1, having a first layer of a material with said first band gap and of said first conductivity type, and a second layer adjacent to said first layer, and of a material with a higher band gap than said first band gap; said second layer having a central part of said second conductivity type and a peripheral part of said first conductivity type; the peripheral part of said second layer laterally surrounding the central part of said second layer and comprising the entire thickness of said second layer.
Claim 4
Dependent Claim
21 words
A semiconductor component according to claim 1 in which said first conductivity type is p-type and second conductivity type is n-type.
Claim 5
Dependent Claim
42 words
A semiconductor component according to claim 2 in which said second layer is adjacent to a surface of said semiconductor body, the central part of the second layer being provided with a contact for the supply of energizing current to the component.
Claim 6
Dependent Claim
41 words
A semiconductor component according to claim 2 in which a third layer of material of said second conductivity type and with a band gap larger than said first band gap is arranged adjacent to and substantially coextensive with said second layer.
Claim 7
Dependent Claim
30 words
A semiconductor component according to claim 2 in which said semiconductor material is selected from Al x Ga 1-x As and In x Ga 1-x As y P 1-y .
Claim 8
Dependent Claim
45 words
A semiconductor component according to claim 2 in which the peripheral part of said second layer is created by diffusing a doping impurity into the peripheral part of the layer, converting the entire thickness of the layer from said second to said first conductivity type.
Claim 9
Dependent Claim
18 words
The semiconductor component according to claim 2 in which said semiconductor material is Al x Ga 1-x As.
Claim 10
Dependent Claim
25 words
The semiconductor component according to claim 7 wherein said impurity is selected from the group of Zn, Cd, Hg, Be, Mg, Si, Ge, and Sn.
Claim 11
Dependent Claim
12 words
The semiconductor component according to claim 7 wherein said impurity is Zn.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-16 | 1990-08-18 | 1991-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-16 | 1994-08-18 | 1995-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-16 | 1998-08-18 | 1999-02-17 | $7700.00 | Window Closed / Lapsed |