Method and apparatus for increasing the durability and yield of thin film photovoltaic devices

Claim 2

In a method of manufacturing thin film photovoltaic cells including the steps of depositing at leasat first and second thin film semiconductor layers on a substrate and forming electrical contacts to the semiconductor layers, the improvement being applying a reverse bias voltage between the semiconductor layers, laser scanning the cell to selectively locate localized shorting or shunting defects therein whereby material from one of the cell components on one side of one of the thin film semiconductor layers would thereby contact a cell component on the other side of that semiconductor layer through the defect which would result in a short or shunt, and selectively thermally eliminating the defect to prevent such shorting.

Claim 3

In the method of claim 1 wherein the one semiconductor layer is adjacent to the substrate.

Claim 4

In the method of claim 2 wherein the scanning and eliminating steps take place before a second electrical contact is applied to the remote semiconductor layer.

Claim 5

In the method of claim 1 wherein the thermally eliminating step is done by applying an electrically conductive wire to the defect and applying current to the wire.

Claim 6

In the method of claim 1 wherein the thermally eliminating step is done by applying a laser beam to the defect.

Claim 7

In the method of claim 5 wherein the same laser equipment is used for both the scanning and thermally eliminating steps.

Claim 8

In the method of claim 6 wherein the scanning step is performed on the low power mode of the laser equipment, and the thermally eliminating step is performed on the high power mode of the laser equipment.

Claim 9

In the method of claim 7 wherein the scanning step includes applying as temporary electrical contacts wiper contacts which contact one of the semiconductor layers.

Claim 10

In the method of claim 1 wherein the semiconductor layers are oppositely doped regions of the same material.

Claim 11

In the method of claim 1 wherein the laser scanning creates an electrical response, recording the electrical response, and locating the defect by comparing the electrical response with a predetermined electrical response is representative of a defect.

Claim 12

In the method of claim 1 wherein the thin film photovoltaic cells are of the Cu 2 S/CdS type.

Claim 13

In the method of claim 1 wherein the thin film photovoltaic cells are of the Cu 2 S/Zn x Cd 1-x type.

Claim 14

In the method of claim 1 wherein the thin film photovoltaic cells are of the amorphous silicon type.

Claim 15

In the method of claim 1 wherein the thin film photovoltaic cells are of the CuInSe 2 type.

Claim 16

In an installation for the continuous manufacture of thin film photovoltaic cells wherein the installation includes a plurality of sequentially arranged stations for providing a substrate which includes a first electrical contact, for applying a first thin film semiconductor layer to the substrate, for applying a second thin film semiconductor layer to the first semiconductor layer, for applying a second electrical contact to the second semiconductor layer, the improvement being a localized shorting or shunting defect eliminating station being located between the second semiconductor application station and the second contact application station for selectively detecting and eliminating said localized shorting or shunting defects, and the shorting and shunting eliminating station including reverse bias laser scanning means for detecting the defect and thermal application means for selectively eliminating the defect.

Claim 17

In an installation for the continuous manufacture of thin film photovoltaic cells wherein the installation includes a plurality of sequentially arranged stations for providing a substrate which includes a first electrical contact, for applying a first thin film semiconductor layer to the substrate, for applying a second thin film semiconductor layer to the first semiconductor layer, for applying a second electrical contact to the second semiconductor layer, the improvement being a localized shorting or shunting defect eliminating station being located between the second semiconductor application station and the second contact application station for selectively detecting and eliminating said localized shorting or shunting defects, and the shorting and shunting eliminating station including reverse bias laser scanning means for detecting the defect and thermal application means for selectively eliminating the defect.

Claim 18

In the installation of claim 15 wherein the defect eliminating station includes laser means having a low power mode and a high power mode wherein the same laser means functions to both detect and eliminate the defect.

Claim 19

In the installation of claim 15 wherein the eliminating station includes means for applying as temporary electrical contacts wiper contacts for contacting the second semiconductor layer.