US4638342A — Space charge modulation device

Claim 1

Independent Claim 81 words

A semiconductor structure comprising in combination: a single band gap semiconductor material body having at least a first surface, a first contact on said first surface of said body, said first contact having at least one dimension of the order of the Debye length in said semiconductor, a second essentially rectifying contact on said first surface positioned within said Debye length of said first contact, and a third contact to said semiconductor body positioned remote from said first and second contacts.

Claim 2

Dependent Claim 81 words

A semiconductor structure comprising in combination: a single band gap semiconductor material body having at least a first surface, a first contact on said first surface of said body, said first contact having at least one dimension of the order of the Debye length in said semiconductor, a second essentially rectifying contact on said first surface positioned within said Debye length of said first contact, and a third contact to said semiconductor body positioned remote from said first and second contacts.

Claim 3

Dependent Claim 14 words

The semiconductor structure of claim 1 wherein said first and third contacts are ohmic.

Claim 4

Dependent Claim 36 words

The structure of claim 2 wherein said body has first and second essentially parallel surfaces, said first and second contacts being positioned on said first surface and said third contact being positioned on said second surface.

Claim 5

Dependent Claim 26 words

The structure of claim 3 wherein said first contact is a low barrier and said second rectifying contact is a Schottky barrier with a higher barrier.

Claim 6

Dependent Claim 75 words

The structure of claim 4 wherein said semiconductor body is n-type silicon doped to 10 15 impurities per cubic centimeter, said first contact is a 0.2 to 0.3 V barrier, and a size of the order of 0.1 micrometer, said second rectifying contact is a Schottky barrier with an of the order of 0.8 V barrier and the distance from said first contact to said second rectifying contact being of the order of 500 Å.

Claim 7

Dependent Claim 101 words

In a semiconductor switching device of the type wherein a signal on a first electrode controls the impedance between a second and a third electrode, the improvement comprising: the providing of a single band gap semiconductor material substrate and both a first contact and a second rectifying type contact, at least one of said first and second contacts being of a size comparable to the Debye length of said semiconductor and said first and second contacts positioned within said Debye length of said semiconductor on the same surface of said semiconductor substrate and a third contact remotely positioned on said substrate.

Claim 8

Dependent Claim 101 words

In a semiconductor switching device of the type wherein a signal on a first electrode controls the impedance between a second and a third electrode, the improvement comprising: the providing of a single band gap semiconductor material substrate and both a first contact and a second rectifying type contact, at least one of said first and second contacts being of a size comparable to the Debye length of said semiconductor and said first and second contacts positioned within said Debye length of said semiconductor on the same surface of said semiconductor substrate and a third contact remotely positioned on said substrate.

Claim 9

Dependent Claim 40 words

The structure of claim 6 wherein said substrate has two essentially parallel surfaces and said first and said second rectifying type contacts are in proximate relationship on one surface and said third contact covers the area of the second surface.

Claim 10

Dependent Claim 78 words

An improved permeable base type transistor comprising a single band gap semiconductor material substrate having at least first and second essentially parallel surfaces, a broad area first contact covering a first surface, a second contact and a third rectifying-type contact, said second contact having at least one dimension of the order of the Debye length for said semiconductor and the separation between said second contact and said third rectifying-type contact being of the order of said Debye length.

Claim 11

Dependent Claim 78 words

An improved permeable base type transistor comprising a single band gap semiconductor material substrate having at least first and second essentially parallel surfaces, a broad area first contact covering a first surface, a second contact and a third rectifying-type contact, said second contact having at least one dimension of the order of the Debye length for said semiconductor and the separation between said second contact and said third rectifying-type contact being of the order of said Debye length.

Claim 12

Dependent Claim 13 words

The transistor of claim 8 wherein said first and second contacts are ohmic.

Claim 13

Dependent Claim 56 words

The transistor of claim 9 wherein said second and said third contacts are each a series of contacts, each said contact series being positioned in interdigitated relationship on one surface of said semiconductor substrate and each member of the series of said first contact having a high conductivity region in said semiconductor adjacent to said contact.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1990-01-19	1990-07-21	1991-01-20	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1994-01-19	1994-07-21	1995-01-20	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1998-01-19	1998-07-21	1999-01-20	$7700.00	Window Closed / Lapsed

Space charge modulation device

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