Patent US1817877A successfully refreshed from Google Patents.
Patent US4634645A successfully refreshed from Google Patents.
US4634645A
Expired / Lapsed
US
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Method of forming resist micropattern
Assignee: NTT Inc
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Filing: 1985-04-09
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Granted: 1987-01-06
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Expires: 2005-04-09
Abstract
Abstract A resist pattern is formed on a substrate by forming a resist on a substrate and radiating an energy beam carrying predetermined pattern information onto the resist, thereby forming a recessed pattern in a surface portion of the resist so as not to extend through the resist. A flat mask layer is formed on the resist including the recessed pattern. The mask layer is uniformly etched along a direction of thickness thereof until at least a surface of the resist is exposed to allow the mask layer to remain on at least a bottom of the recessed pattern, thereby forming a mask pattern comprising the remaining residual mask layer. Finally, the resist is etched by using the mask pattern as an etching mask.
Inventors
- 👤 Tadahito Matsuda
- 👤 Katsuhiro Harada
- 👤 Shigeru Moriya
- 👤 Tetsuyoshi Ishii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:14
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/40; G03F7/0035; Y; Y10; Y10S; Y10S430/00; Y10S430/143; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
129 words
A method of forming a resist pattern on a substrate, comprising the steps of: (a) forming a resist on a substrate; (b) radiating an energy beam carrying predetermined pattern information onto said resist and forming a recessed pattern in a surface portion of the resist so as not to extend through said resist; (c) forming a planar mask layer on said resist including said recessed pattern; (d) uniformly etching said mask layer along a direction of thickness thereof until at least a surface of said resist is exposed to allow said mask layer to remain on at least a bottom of said recessed pattern, thereby forming a mask pattern comprising the remaining residual mask layer; and (e) etching said resist by using said mask pattern as an etching mask.
Claim 2
Independent Claim
129 words
A method of forming a resist pattern on a substrate, comprising the steps of: (a) forming a resist on a substrate; (b) radiating an energy beam carrying predetermined pattern information onto said resist and forming a recessed pattern in a surface portion of the resist so as not to extend through said resist; (c) forming a planar mask layer on said resist including said recessed pattern; (d) uniformly etching said mask layer along a direction of thickness thereof until at least a surface of said resist is exposed to allow said mask layer to remain on at least a bottom of said recessed pattern, thereby forming a mask pattern comprising the remaining residual mask layer; and (e) etching said resist by using said mask pattern as an etching mask.
Claim 3
Dependent Claim
21 words
A method according to claim 1, wherein said recessed pattern has a recess whose depth is not more than 0.4 μm.
Claim 4
Dependent Claim
19 words
A method according to claim 2, wherein said mask layer has a thickness of not less than 2.0 μm.
Claim 5
Dependent Claim
14 words
A method according to claim 1, wherein said resist comprises a positive resist material.
Claim 6
Dependent Claim
16 words
A method according to claim 1, wherein said mask material comprises silicone resin or spin-on glass.
Claim 7
Dependent Claim
18 words
A method according to claim 1, wherein said recessed pattern reflects a beam profile of said energy beam.
Claim 8
Dependent Claim
14 words
A method according to claim 6, wherein the energy beam comprises an electron beam.
Claim 9
Dependent Claim
12 words
A method according to claim 6, wherein said energy beam comprises light.
Claim 10
Dependent Claim
12 words
A method according to claim 6, wherein said energy beam comprises X-ray.
Claim 11
Dependent Claim
14 words
A method according to claim 6, wherein said energy beam comprises an ion beam.
Claim 12
Dependent Claim
28 words
A method according to claim 4, wherein said resist comprises a homopolymer of a monomer selected from the group consisting of α,α-dimethylbenzylmethacrylate, α-methylbenzylmethacrylate, diphenylmethacrylate, triphenylmethacrylate, phenylmethacrylate and tert-butylmethacrylate.
Claim 13
Dependent Claim
61 words
A method according to claim 4, wherein said resist comprises a copolymer of at least one first monomer selected from the group consisting of α,α-dimethylbenzylmethacrylate, α-methylbenzylmethacrylate, diphenylmethacrylate, triphenylmethacrylate, phenylmethacrylate and tert-butylmethacrylate, and at least one second monomer represented by a general formula CH 2 =C(CH 3 )COOR wherein R is an alkyl or haloalkyl group having 1 to 5 carbon atoms.
Claim 14
Dependent Claim
14 words
A method according to claim 1, wherein said resist is a single layer resist.
Claim 15
Dependent Claim
19 words
A method according to claim 1, wherein said resist comprises a multi-layer resist whose uppermost layer constitutes said resist.
Claim 16
Dependent Claim
58 words
A method according to claim 1, further including the steps of adding a label material containing an element other than those constituting a material forming said resist or the mask layer to the material constituting either the resist or the mask layer, and judging an interface between said mask layer and said resist by detecting said label material.
Claim 17
Dependent Claim
23 words
A method according to claim 15, wherein said interface is detected based on a change in intensity of a mass or emission spectrum.
Claim 18
Dependent Claim
75 words
A method according to claim 1, further including the steps of adding a label material containing an element other than those constituting a material forming said resist or the mask layer to the material constituting either the resist or the mask layer, and judging an interface between said mask layer and said resist with the interface being detected in accordance with the change in intensity of the mass or emission spectrum of said label material.
Claim 19
Dependent Claim
63 words
A method according to claim 1, further including the steps of forming a label layer of a label material containing an element other than those of said mask layer and said resist between said resist and said mask layer, and judging the interface between said mask layer and said resist with the label material in said label layer being detected. detected during etching.
Claim 20
Dependent Claim
33 words
A method according to claim 18, wherein said label layer is sandwiched between resist layers so as to be located at a central portion along a direction of thickness of said recessed pattern.
Claim 21
Dependent Claim
16 words
A method according to claim 12, wherien said mask material comprises silicone resin or spin-on glass.
Claim 22
Dependent Claim
75 words
A method according to claim 12, further including the steps of adding a label material containing an element other than those constituting a material forming said resist or the mask layer to the material constituting either the resist or the mask layer, and judging an interface between said mask layer and said resist with the interface being detected in accordance with the change in intensity of the mass or emission spectrum of said label material.
Claim 23
Dependent Claim
60 words
A method according to claim 12, further including the steps of forming a label layer of a label material containing an element other than those of said mask layer and said resist between said resist and said mask layer, and judging the interface between said mask layer and said resist with the label material in said label layer being detected.
Claim 24
Dependent Claim
33 words
A method according to claim 21, wherein said label layer is sandwiched between resist layers so as to be located at a central portion along a direction of thickness of said recessed pattern.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-01-05 | 1990-07-07 | 1991-01-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-01-05 | 1994-07-07 | 1995-01-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-01-05 | 1998-07-07 | 1999-01-06 | $7700.00 | Window Closed / Lapsed |