US4633291A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High-gain semiconductor device with capacitive coupling
Assignee: Toshiba Corp
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Filing: 1984-02-28
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Granted: 1986-12-30
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Expires: 2004-02-28
Abstract
Abstract An n-type region isolated by a p-type region is formed on a p-type substrate. Within the n-type region, in order to constitute an npn-transistor, an n + region, a p-type region and an n + region are formed. Within the n-type region, a p-type region is formed, and an insulating film and a metal layer are successively stacked on the p-type region to form an oxide film capacitor. The p-type region of the oxide film capacitor is in contact with the n + region of the npn-transistor by means of a metal wiring. Within a p-type region of the oxide film capacitor, an n + region is further formed. An additional npn-transistor may be formed by the n + region, the p-type region and n-type region.
Inventors
- 👤 Takeshi Koyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:59
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/615; H10W; H10W20/00; H10W20/40; H10W20/495
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
81 words
A semiconductor device comprising: (a) an npn-transistor formed within an n-type region surrounded by an isolation region, and connected in common collector manner; (b) an oxide film capacitor comprising a p-type region formed within said n-type region, an oxide film formed on said p-type region, and a metal layer formed on said oxide film; and (c) an element for electically connecting said p-type region of said oxide film capacitor to the emitter region of said npn-transistor and for deriving signals therefrom.
Claim 2
Dependent Claim
81 words
A semiconductor device comprising: (a) an npn-transistor formed within an n-type region surrounded by an isolation region, and connected in common collector manner; (b) an oxide film capacitor comprising a p-type region formed within said n-type region, an oxide film formed on said p-type region, and a metal layer formed on said oxide film; and (c) an element for electically connecting said p-type region of said oxide film capacitor to the emitter region of said npn-transistor and for deriving signals therefrom.
Claim 3
Dependent Claim
16 words
A semiconductor device acording to claim 1, wherein said electrically connecting element comprises a metal wire.
Claim 4
Dependent Claim
15 words
A semiconductor device according to claim 2, wherein said metal wire is comprised of aluminum.
Claim 5
Dependent Claim
111 words
A semiconductor device comprising: (a) an npn-transistor formed within an n-type region surrounded by an isolation region, and connected in common collector manner; (b) an oxide film capacitor comprising a p-type region formed within said n-type region, an oxide film formed on said p-type region, and a metal layer formed on said oxide film; (c) an additional npn-transistor comprising an n + region formed within said p-type region, said p-type region and said n-type region; and (d) an element for electrically connecting said p-type region of said oxide film capacitor and the n + region of said additional npn-transistor to the emitter region of said npn-transistor and for deriving signals therefrom.
Claim 6
Dependent Claim
111 words
A semiconductor device comprising: (a) an npn-transistor formed within an n-type region surrounded by an isolation region, and connected in common collector manner; (b) an oxide film capacitor comprising a p-type region formed within said n-type region, an oxide film formed on said p-type region, and a metal layer formed on said oxide film; (c) an additional npn-transistor comprising an n + region formed within said p-type region, said p-type region and said n-type region; and (d) an element for electrically connecting said p-type region of said oxide film capacitor and the n + region of said additional npn-transistor to the emitter region of said npn-transistor and for deriving signals therefrom.
Claim 7
Dependent Claim
16 words
A semiconductor device according to claim 4, wherein said electrically connecting element comprises a metal wire.
Claim 8
Dependent Claim
15 words
A semiconductor device according to claim 5, wherein said metal wire is comprised of aluminum.
Claim 9
Dependent Claim
102 words
A semiconductor device comprising: a p-type substrate; a first n-type region formed on said substrate; p + -type isolation regions surrounding said n-type region; a p-type base region formed in said first n-type region; and n + -type emitter region formed in said base region; an n + -type collector region formed in said first n-type region; an oxide film capacitor comprising a p-type storage region formed in said first n-type region, an oxide film formed over said storage region, and a metal layer formed over said oxide film; and a means for electrically connecting said storage region to said emitter region.
Claim 10
Dependent Claim
102 words
A semiconductor device comprising: a p-type substrate; a first n-type region formed on said substrate; p + -type isolation regions surrounding said n-type region; a p-type base region formed in said first n-type region; and n + -type emitter region formed in said base region; an n + -type collector region formed in said first n-type region; an oxide film capacitor comprising a p-type storage region formed in said first n-type region, an oxide film formed over said storage region, and a metal layer formed over said oxide film; and a means for electrically connecting said storage region to said emitter region.
Claim 11
Dependent Claim
15 words
The semiconductor device according to claim 7, wherein said connecting means comprises a metal wire.
Claim 12
Dependent Claim
14 words
The semiconductor device according to claim 8, wherein said wire is comprised of aluminum.
Claim 13
Dependent Claim
50 words
The semiconductor device according to claim 7, further comprising: a second n + -type emitter region formed in said p-type storage region, wherein said second emitter region, said storage region, and said collector region form an npn-transistor; and means for electrically connecting said storage region to said second emitter region.
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