Patent US4631198A successfully refreshed from Google Patents.
US4631198A
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US
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Method of manufacturing thin amorphous silicon film
Assignee: Oki Electric Industry Co Ltd
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Filing: 1985-07-26
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Granted: 1986-12-23
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Expires: 2005-07-26
Abstract
Abstract A method of manufacturing thin amorphous silicon hydride film is disclosed by using a plasma CVD process. The method comprises the steps of providing a substrate for supporting the amorphous silicon hydride film, providing raw material gas produced by mixing hydrogen silicide SinH2n+2(n>/=1) with additive gas in the concentration from about 0.1 to 10 parts per million by volume, setting a gas flow rate of the raw material gas in the range from about 200 to about 700 SCCM, applying radio frequency electric power to said gas in plasma CVD apparatus, said power being selected in the range from about 300 W to about 700 W to result in a ratio of electric power in watts to gas flow rate in SCCM of at least about 1, and growing thin amorphous silicon hydride film on the substrate from the raw material gas.
Inventors
- 👤 Hiroaki Kakinuma
- 👤 Satoshi Nishikawa
- 👤 Tsukasa Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:13
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2923; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H10P14/24; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
141 words
A method of manufacturing thin amorphous silicon hydride film by a plasma CVD process comprising the steps of providing a substrate for supporting the amorphous silicon hydride film, providing raw material gas produced by mixing hydrogen silicide Si n H 2n+2 (n≧1) with additive gas in the concentration from about 0.1 to 10 parts per million by volume, setting a gas flow rate of the raw material gas in the range from about 200 to about 700 SCCM, applying radio frequency electric power to said gas in plasma CVD apparatus, said power being selected in the range from about 300 W to about 700 W to result in a ratio of electric power in watts to gas flow rate in SCCM of at least about 1, and growing thin amorphous silicon hydride film on the substrate from the raw material gas.
Claim 2
Independent Claim
141 words
A method of manufacturing thin amorphous silicon hydride film by a plasma CVD process comprising the steps of providing a substrate for supporting the amorphous silicon hydride film, providing raw material gas produced by mixing hydrogen silicide Si n H 2n+2 (n≧1) with additive gas in the concentration from about 0.1 to 10 parts per million by volume, setting a gas flow rate of the raw material gas in the range from about 200 to about 700 SCCM, applying radio frequency electric power to said gas in plasma CVD apparatus, said power being selected in the range from about 300 W to about 700 W to result in a ratio of electric power in watts to gas flow rate in SCCM of at least about 1, and growing thin amorphous silicon hydride film on the substrate from the raw material gas.
Claim 3
Dependent Claim
26 words
A method of manufacturing thin amorphous silicon hydride film as claimed in claim 1, wherein the given raw material gas pressure is 1 to 3 Torr.
Claim 4
Dependent Claim
61 words
A method of manufacturing thin amorphous silicon hydride film as claimed in claim 2, wherein the substrate is heated to a temperature of 200° to 300° C., the additive gas is at least one selected from a group of B 2 H 6 , PH 3 and O 2 , N 2 O and, hydrocarbons, and the hydrogen silicide is monosilane.
Claim 5
Independent Claim
143 words
A method of manufacturing thin amorphous silicon hydride film by a plasma CVC process comprising the steps of providing a substrate for supporting the amorphous silicon hydride film, providing raw material gas produced by mixing hydrogen silicide Si n H 2n+2 (n≧1) with additive gas in a concentration from about 0.1 to about 10 parts per million by volume, setting a gas flow rate of the raw material gas in the range of from about 200 to about 700 SCCM, applying radio frequency electric power to said gas in a plasma CVD apparatus, said power being in the range of about 300 W to about 700 W and selected to produce a thin amorphous film havng a ratio of infrared absorption of the Si--H bond to the infrared absorption of the Si--H 2 bond in the range of about 0.9 to about 1.1.
Claim 6
Independent Claim
143 words
A method of manufacturing thin amorphous silicon hydride film by a plasma CVC process comprising the steps of providing a substrate for supporting the amorphous silicon hydride film, providing raw material gas produced by mixing hydrogen silicide Si n H 2n+2 (n≧1) with additive gas in a concentration from about 0.1 to about 10 parts per million by volume, setting a gas flow rate of the raw material gas in the range of from about 200 to about 700 SCCM, applying radio frequency electric power to said gas in a plasma CVD apparatus, said power being in the range of about 300 W to about 700 W and selected to produce a thin amorphous film havng a ratio of infrared absorption of the Si--H bond to the infrared absorption of the Si--H 2 bond in the range of about 0.9 to about 1.1.
Claim 7
Independent Claim
143 words
A method of manufacturing thin amorphous silicon hydride film by a plasma CVD process comprising the steps of providing a substrate for supporting the amorphous silicon hydride film, providing raw material gas produced by mixing hydrogen silicide Si n H 2n+2 (n≧1) with additive gas in the concentration from about 0.1 to 10 parts per million by volume, setting a gas flow rate of the raw material gas in the range from about 200 to about 700 SCCM, applying radio frequency electric power to said gas in plasma CVD apparatus, said power defining at a surface of said substrate power density of approximately 0.19 to 0.47 W/cm 2 to result in a ratio of electric power in watts to gas flow rate in SCCM of least about 1, and growing thin amorphous silicon hydride film on the substrate from the raw material gas.
Claim 8
Independent Claim
143 words
A method of manufacturing thin amorphous silicon hydride film by a plasma CVD process comprising the steps of providing a substrate for supporting the amorphous silicon hydride film, providing raw material gas produced by mixing hydrogen silicide Si n H 2n+2 (n≧1) with additive gas in the concentration from about 0.1 to 10 parts per million by volume, setting a gas flow rate of the raw material gas in the range from about 200 to about 700 SCCM, applying radio frequency electric power to said gas in plasma CVD apparatus, said power defining at a surface of said substrate power density of approximately 0.19 to 0.47 W/cm 2 to result in a ratio of electric power in watts to gas flow rate in SCCM of least about 1, and growing thin amorphous silicon hydride film on the substrate from the raw material gas.
Claim 9
Independent Claim
143 words
A method of manufacturing thin amorphous silicon hydride film by a plasma CVD process comprising the steps of providing a substrate for supporting the amorphous silicon hydride film, providing raw material gas produced by mixing hydrogen silicide Si n H 2n+2 (n≧1) with additive gas in the concentration from about 0.1 to 10 parts per million by volume, setting a gas flow rate of the raw material gas in the range from about 200 to about 700 SCCM, applying radio frequency electric power to said gas in plasma CVD apparatus, said power defining at a surface of said substrate power density of approximately 0.16 to 0.93 W/cm 2 to result in a ratio of electric power in watts to gas flow rate in SCCM of least about 1, and growing thin amorphous silicon hydride film on the substrate from the raw material gas.
Claim 10
Independent Claim
143 words
A method of manufacturing thin amorphous silicon hydride film by a plasma CVD process comprising the steps of providing a substrate for supporting the amorphous silicon hydride film, providing raw material gas produced by mixing hydrogen silicide Si n H 2n+2 (n≧1) with additive gas in the concentration from about 0.1 to 10 parts per million by volume, setting a gas flow rate of the raw material gas in the range from about 200 to about 700 SCCM, applying radio frequency electric power to said gas in plasma CVD apparatus, said power defining at a surface of said substrate power density of approximately 0.16 to 0.93 W/cm 2 to result in a ratio of electric power in watts to gas flow rate in SCCM of least about 1, and growing thin amorphous silicon hydride film on the substrate from the raw material gas.
References Cited (Backward Citations)
US4568626A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-22 | 1990-06-23 | 1990-12-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-22 | 1994-06-23 | 1994-12-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-22 | 1998-06-23 | 1998-12-23 | $7700.00 | Window Closed / Lapsed |