Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
177 words
In a power amplifier circuit with complementary field-effect transistors including an N-channel transistor, the drain of which is operatively connected to the positive pole of a voltage source, and the source of which is connected to an output terminal of the amplifier and to the source of a P-channel transistor, the drain of said P-channel transistor being connected to the negative pole of said voltage source, the gates of said N-channel and P-channel transistors being connected to a substantially constant bias voltage source defining the zero voltage level of said amplifier, the improvement comprising: zener diode means for protecting said field-effect transistors from overvoltages and over currents at operating voltages lower than or equal to the maximum permissible operating voltages of said transistors including, a first zener diode having a cathode connected to the gate of said N-channel transistor and an anode connected to the drain of said P-channel transistor, and a second zener diode having an anode connected to the gate of said P-channel transistor, and a cathode connected to the drain of the N-channel transistor.
Claim 2
Dependent Claim
177 words
In a power amplifier circuit with complementary field-effect transistors including an N-channel transistor, the drain of which is operatively connected to the positive pole of a voltage source, and the source of which is connected to an output terminal of the amplifier and to the source of a P-channel transistor, the drain of said P-channel transistor being connected to the negative pole of said voltage source, the gates of said N-channel and P-channel transistors being connected to a substantially constant bias voltage source defining the zero voltage level of said amplifier, the improvement comprising: zener diode means for protecting said field-effect transistors from overvoltages and over currents at operating voltages lower than or equal to the maximum permissible operating voltages of said transistors including, a first zener diode having a cathode connected to the gate of said N-channel transistor and an anode connected to the drain of said P-channel transistor, and a second zener diode having an anode connected to the gate of said P-channel transistor, and a cathode connected to the drain of the N-channel transistor.
Claim 3
Dependent Claim
31 words
The circuit of claim 1 further comprising a diode having a cathode connected to the gate of said N-channel transistor and an anode connected to the gate of said P-channel transistor.
Claim 4
Dependent Claim
22 words
The circuit of claim 2, wherein a diode is connected, anode-to-anode, in series with each of said first and second zener diodes.
Claim 5
Dependent Claim
40 words
The circuit of claim 3, wherein diode means are connected from the common source of the N-channel and P-channel transistors to said first and second zener diodes to limit voltages on the gates of said transistors to prevent gate breakdown.
Claim 6
Dependent Claim
40 words
The circuit of claim 2, wherein diode means are connected from the common source of the N-channel and P-channel transistors to said first and second zener diodes to limit voltages on the gates of said transistors to prevent gate breakdown.
Claim 7
Dependent Claim
22 words
The circuit of claim 1, wherein a diode is connected anode-to-anode, in series with each of said first and second zener diodes.
Claim 8
Dependent Claim
40 words
The circuit of claim 1, wherein diode means are connected from the common source of the N-channel and P-channel transistors to said first and second zener diodes to limit voltages on the gates of said transistors to prevent gate breakdown.