US4628591A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
Assignee: Texas Instruments Inc
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Filing: 1984-10-31
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Granted: 1986-12-16
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Expires: 2004-10-31
Abstract
Abstract Full oxide isolation of epitaxial islands can be accomplished by oxidizing suitably porous silicon. The porous silicon can be created by anodizing highly doped n+ silicon in hydroflouric acid. Lesser doped epitaxial regions will not become porous and will become isolated islands suitable for the fabrication of semiconductor devices.
Inventors
- 👤 Eldon J. Zorinsky
- 👤 David B. Spratt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 01:04
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/10; H10P; H10P50/00; H10W10/01; H10W10/011; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/05; Y10S148/085
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
148 words
A method for forming an isolated n type epitaxial island on an n type silicon chip, comprising the steps of: (a) forming highly doped n type epitaxial silicon on said chip; (b) forming moderately doped n type epitaxial silicon on said highly doped epitaxial silicon; (c) selectively implanting ions in at least said moderately doped epitaxial silicon to selectively dope said moderately doped epitaxial silicon to a level approximately equal to the doping level of said highly doped epitaxial silicon, thereby creating an island of moderately doped epitaxial silicon surrounded at its sides and bottoms by highly doped epitaxial silicon; (d) exposing the chip in an anodizing agent and voltage whereby porous silicon is selectively formed only in the highly doped epitaxial silicon; and (e) oxidizing the porous silicon to form silicon dioxide in the porous silicon, thereby forming an isolated n type epitaxial island on the chip.
Claim 2
Independent Claim
148 words
A method for forming an isolated n type epitaxial island on an n type silicon chip, comprising the steps of: (a) forming highly doped n type epitaxial silicon on said chip; (b) forming moderately doped n type epitaxial silicon on said highly doped epitaxial silicon; (c) selectively implanting ions in at least said moderately doped epitaxial silicon to selectively dope said moderately doped epitaxial silicon to a level approximately equal to the doping level of said highly doped epitaxial silicon, thereby creating an island of moderately doped epitaxial silicon surrounded at its sides and bottoms by highly doped epitaxial silicon; (d) exposing the chip in an anodizing agent and voltage whereby porous silicon is selectively formed only in the highly doped epitaxial silicon; and (e) oxidizing the porous silicon to form silicon dioxide in the porous silicon, thereby forming an isolated n type epitaxial island on the chip.
Claim 3
Dependent Claim
20 words
The method of claim 1, wherein the porous silicon has a density approximately equal to one-half that of epitaxial silicon.
Claim 4
Dependent Claim
43 words
The method of claim 1 further comprising forming a thin layer of lightly doped silicon under said moderately doped n type epitaxial silicon region prior to the formation of the highly doped n type epitaxial silicon surrounding and underneath the moderately doped regions.
Claim 5
Dependent Claim
32 words
The method of claim 1 wherein said step of exposing the chip to an anodizing agent comprises exposing the chip to hydroflouric acid to form porous silicon in the highly doped regions.
Claim 6
Independent Claim
164 words
A method for forming an isolated n type epitaxial island on an n type silicon chip, comprising the steps of: (a) forming highly doped n type epitaxial silicon on said chip; (b) forming moderately doped n type epitaxial silicon on said higly doped epitaxial silicon; (c) selectively removing the moderately doped epitaxial silicon in regions surrounding an island of moderately doped epitaxial silicon; (d) selectively forming in said regions from which said moderately doped epitaxial silicon was removed epitaxial silicon having a doping level approximately equal to the doping level of said highly doped epitaxial silicon, thereby creating an island of moderately doped epitaxial silicon surrounded at its sides and bottoms by highly doped epitaxial silicon; (e) exposing the chip to an anodizing agent and voltage whereby porous silicon is selectively formed only in the highly doped epitaxial silicon; and (f) oxidizing the porous silicon to form silicon dioxide in the porous silicon, thereby forming an isolated n type epitaxial island on the chip.
Claim 7
Independent Claim
164 words
A method for forming an isolated n type epitaxial island on an n type silicon chip, comprising the steps of: (a) forming highly doped n type epitaxial silicon on said chip; (b) forming moderately doped n type epitaxial silicon on said higly doped epitaxial silicon; (c) selectively removing the moderately doped epitaxial silicon in regions surrounding an island of moderately doped epitaxial silicon; (d) selectively forming in said regions from which said moderately doped epitaxial silicon was removed epitaxial silicon having a doping level approximately equal to the doping level of said highly doped epitaxial silicon, thereby creating an island of moderately doped epitaxial silicon surrounded at its sides and bottoms by highly doped epitaxial silicon; (e) exposing the chip to an anodizing agent and voltage whereby porous silicon is selectively formed only in the highly doped epitaxial silicon; and (f) oxidizing the porous silicon to form silicon dioxide in the porous silicon, thereby forming an isolated n type epitaxial island on the chip.
Claim 8
Dependent Claim
43 words
The method of claim 5 further comprising forming a thin layer of lightly doped silicon under said moderately doped n type epitaxial silicon region prior to the formation of the highly doped n type epitaxial silicon surrounding and underneath the moderately doped regions.
Claim 9
Dependent Claim
32 words
The method of claim 6 wherein said step of exposing the chip to an anodizing agent comprises exposing the chip to hydrofluoric acid to form porous silicon in the highly doped regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-12-15 | 1990-06-16 | 1990-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-15 | 1994-06-16 | 1994-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-15 | 1998-06-16 | 1998-12-16 | $7700.00 | Window Closed / Lapsed |