Patent US4628487A successfully refreshed from Google Patents.
US4628487A
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Dual slope, feedback controlled, EEPROM programming
Assignee: Texas Instruments Inc
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Filing: 1984-08-14
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Granted: 1986-12-09
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Expires: 2004-08-14
Abstract
Abstract A floating-gate, electrically-erasable, programmable read-only memory cell is programmed or erased by a high voltage across a thin oxide area between the floating gate and the substrate. A tunnelling phenomena is produced by the high voltage. In order to protect the thin oxide from excessive stress, yet minimize programming time, the maximum electric field is controlled by a dual-slope waveform for the programming voltage Vpp. The values of slope and breakpoints for this dual-slope Vpp voltage are selected by a feedback arrangement which is responsive to process variations in threshold voltage, supply voltage, etc.
Inventors
- 👤 Michael C. Smayling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:41
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/12; G11C16/04; G11C16/0408; G11C16/0441; H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
108 words
A method of programming a floating gate memory cell of the type having a thin-oxide area between a floating gate and another electrode, comprising the steps of: applying a voltage to said memory cell to produce an electric field across said thin-oxide area, and increasing said voltage substantially linearly as a function of time at a first rate, abruptly changing the rate of increase of said voltage to a second rate lower than said first rate and then continuing to increase said voltage substantially linearly, then again abruptly ceasing said increase of voltage and thereafter maintaining said voltage constant at a given maximum level for a selected time.
Claim 2
Independent Claim
108 words
A method of programming a floating gate memory cell of the type having a thin-oxide area between a floating gate and another electrode, comprising the steps of: applying a voltage to said memory cell to produce an electric field across said thin-oxide area, and increasing said voltage substantially linearly as a function of time at a first rate, abruptly changing the rate of increase of said voltage to a second rate lower than said first rate and then continuing to increase said voltage substantially linearly, then again abruptly ceasing said increase of voltage and thereafter maintaining said voltage constant at a given maximum level for a selected time.
Claim 3
Dependent Claim
28 words
A method according to claim 1 wherein said step of changing the rate is in response to reaching a maximum value of electric field across said thin-oxide area.
Claim 4
Dependent Claim
23 words
A method according to claim 2 wherein said second rate is selected to maintain a relatively constant electric field across said thin-oxide area.
Claim 5
Dependent Claim
20 words
A method according to claim 3 wherein said second rate is less than about one-tenth that of the first rate.
Claim 6
Dependent Claim
28 words
A method according to claim 4 wherein said first rate is the maximum permitted by the parasitic capacitance of the circuitry of the device containing the memory cell.
Claim 7
Dependent Claim
18 words
A method according to claim 3 wherein said given maximum level is selected based upon measuring said voltage.
Claim 8
Dependent Claim
25 words
A method according to claim 2 wherein said step of changing the rate is implemented in response to detecting the voltage across said thin-oxide area.
Claim 9
Dependent Claim
57 words
A method according to claim 2 wherein said memory cell includes a memory transistor formed at a face of a semiconductor body and having a control gate, a floating gate and a source-to-drain path, and wherein said floating gate extends to a programming area spaced from said memory area, the thin-oxide area being in said programming area.
Claim 10
Dependent Claim
27 words
A method according to claim 8 wherein said control gate extends to said programming area, and said voltage is applied between said control gate and said electrode.
Claim 11
Dependent Claim
15 words
A method according to claim 9 wherein said electrode is a region in said face.
Claim 12
Dependent Claim
117 words
An electrically-erasable, programmable, semiconductor memory cell comprising: a control gate, a floating gate and a source-to-drain path at a face of a semiconductor body, write/erase means at said face including an upper electrode integral with said floating gate, and a lower electrode in said face, with a thin oxide area between the upper and lower electrodes, means for applying a programming pulse across said thin-oxide area, said pulse including a first substantially linear ramp period of increasing voltage followed by a second substantially linear ramp period of increasing voltage followed by a period of constant voltage, and abruptly changing from the first to the second at a time related to the electric field across said thin-oxide area.
Claim 13
Dependent Claim
117 words
An electrically-erasable, programmable, semiconductor memory cell comprising: a control gate, a floating gate and a source-to-drain path at a face of a semiconductor body, write/erase means at said face including an upper electrode integral with said floating gate, and a lower electrode in said face, with a thin oxide area between the upper and lower electrodes, means for applying a programming pulse across said thin-oxide area, said pulse including a first substantially linear ramp period of increasing voltage followed by a second substantially linear ramp period of increasing voltage followed by a period of constant voltage, and abruptly changing from the first to the second at a time related to the electric field across said thin-oxide area.
Claim 14
Dependent Claim
31 words
A device according to claim 11 wherein the voltage of said pulse during said second ramp period increases at substantially linear rate much greater than that of said first ramp period.
Claim 15
Dependent Claim
26 words
A device according to claim 12 wherein said write/erase means includes a conductive layer integral with said control gate and overlying said upper and lower electrodes.
Claim 16
Dependent Claim
30 words
A device according to claim 13 wherein said pulse is applied between said conductive layer and said lower electrode, and said lower electrode is a region of said semiconductor body.
Claim 17
Dependent Claim
20 words
A device according to claim 14 wherein said floating gate is charged or discharged by tunnelling through said thin-oxide area.
Claim 18
Dependent Claim
39 words
A device according to claim 15 including detector means responsive to the electric field across said thin-oxide area, and means for controlling said time of changing from the first to second ramp period in response to said detector means.
Claim 19
Dependent Claim
36 words
A device according to claim 16 wherein the rate of change of voltage of said pulse during the second ramp period is no more than about one-tenth that of said pulse during the first ramp period.
Claim 20
Dependent Claim
31 words
A device according to claim 17 including means for limiting the maximum value of voltage of said pulse after said second period in response to the field across said thin-oxide area.
Claim 21
Dependent Claim
29 words
A device according to claim 16 wherein said detector means is responsive to temperature, supply voltage, and process variations in the threshold voltage of transistors on the semiconductor body.
References Cited (Backward Citations)
US4434478A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-08 | 1990-06-09 | 1990-12-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-08 | 1994-06-09 | 1994-12-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-08 | 1998-06-09 | 1998-12-09 | $7700.00 | Window Closed / Lapsed |