US4627883A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming an isolated semiconductor structure
Assignee: Verizon Laboratories Inc
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Filing: 1985-04-01
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Granted: 1986-12-09
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Expires: 2005-04-01
Abstract
Abstract Method of producing a silicon structure for fabricating integrated circuit devices therein by forming a plurality of regions of N-type single crystal silicon of high resistivity inset in the surface of silicon of either P-type conductivity or of N-type conductivity of low resistivity. The silicon contiguous with the regions of high resistivity N-type silicon is converted to porous silicon by anodically treating in an aqueous solution of HF. Then, conductivity type imparting material is diffused through the porous silicon into portions of the regions of N-type conductivity to alter their electrical characteristics to P-type or to low resistivity N-type. The porous silicon is then oxidized to silicon oxide, electrically isolating each of the N-type regions and its associated portion.
Inventors
- 👤 Roger P. Holmstrom
- 👤 Jim-Yong Chi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:26
CPC Classifications
H; H10; H10P; H10P50/00; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/191; H10W10/011; H10W10/012; H10W10/13; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
134 words
The method of producing a semiconductor integrated circuit structure comprising providing a body of single crystal silicon having a layer of P-type conductivity or of N-type conductivity of low resistivity with a plurality of regions of N-type conductivity of high resistivity inset in said layer at a surface thereof, each of said regions being surrounded by silicon of said layer except at said surface and having an interface with the silicon of said layer; converting silicon of said layer contiguous with the interfaces with said regions to porous silicon; diffusing conductivity type imparting material through the porous silicon into portions of said regions contiguous with said interfaces to alter the electrical characteristics thereof; and oxidizing portions of the porous silicon contiguous with said interfaces to form insulating material electrically isolating each of said regions.
Claim 2
Independent Claim
134 words
The method of producing a semiconductor integrated circuit structure comprising providing a body of single crystal silicon having a layer of P-type conductivity or of N-type conductivity of low resistivity with a plurality of regions of N-type conductivity of high resistivity inset in said layer at a surface thereof, each of said regions being surrounded by silicon of said layer except at said surface and having an interface with the silicon of said layer; converting silicon of said layer contiguous with the interfaces with said regions to porous silicon; diffusing conductivity type imparting material through the porous silicon into portions of said regions contiguous with said interfaces to alter the electrical characteristics thereof; and oxidizing portions of the porous silicon contiguous with said interfaces to form insulating material electrically isolating each of said regions.
Claim 3
Dependent Claim
90 words
The method in accordance with claim 1 wherein providing a body of single crystal silicon having a layer of P-type conductivity or of N-type conductivity of low resistivity with a plurality of regions of N-type conductivity of high resistivity inset therein at a surface thereof includes providing a body of single crystal silicon having a layer of P-type conductivity of high resistivity at a surface thereof; and introducing N-type conductivity imparting material into a plurality of regions at said surface to convert the regions to N-type conductivity of high resistivity.
Claim 4
Dependent Claim
39 words
The method in accordance with claim 2 wherein diffusing conductivity type imparting material through the porous silicon includes diffusing N-type conductivity imparting material into said portions of said regions to convert the portions to N-type conductivity of low resistivity.
Claim 5
Dependent Claim
36 words
The method in accordance with claim 2 wherein diffusing conductivity type imparting material through the porous silicon includes diffusing P-type conductivity imparting material into said portions of said regions to convert the portions to P-type conductivity.
Claim 6
Dependent Claim
47 words
The method in accordance with claim 2 wherein oxidizing portions of the porous silicon comprises heating the body in an oxidizing atmosphere to convert the portions of porous silicon to silicon oxide and to further diffuse the conductivity type imparting material into said portions of said regions.
Claim 7
Dependent Claim
23 words
The method in accordance with claim 5 wherein converting silicon to porous silicon includes anodically treating the body in an aqueous etching solution.
Claim 8
Independent Claim
180 words
The method of producing a semiconductor integrated circuit structure comprising providing a substrate of single crystal silicon having a layer of N-type conductivity of high resistivity; forming a layer of single crystal silicon of P-type conductivity or of N-type conductivity of low resistivity having an interface with said N-type layer; growing an epitaxial layer of silicon of N-type conductivity of high resistivity having an interface with said layer and having a surface spaced from said interface; introducing conductivity type imparting material into zones of said epitaxial layer extending from said surface thereof to said interface with said layer to form a plurality of regions of N-type conductivity of high resistivity, each region being encircled by said zones and having an interface therewith; converting the silicon of said layer and of said zones to porous silicon; diffusing conductivity type imparting material through the porous silicon of said layer and said zones into portions of said regions contiguous with said interfaces to alter the electrical characteristics thereof; and oxidizing said porous silicon to form insulating material electrically isolating each of said regions.
Claim 9
Independent Claim
180 words
The method of producing a semiconductor integrated circuit structure comprising providing a substrate of single crystal silicon having a layer of N-type conductivity of high resistivity; forming a layer of single crystal silicon of P-type conductivity or of N-type conductivity of low resistivity having an interface with said N-type layer; growing an epitaxial layer of silicon of N-type conductivity of high resistivity having an interface with said layer and having a surface spaced from said interface; introducing conductivity type imparting material into zones of said epitaxial layer extending from said surface thereof to said interface with said layer to form a plurality of regions of N-type conductivity of high resistivity, each region being encircled by said zones and having an interface therewith; converting the silicon of said layer and of said zones to porous silicon; diffusing conductivity type imparting material through the porous silicon of said layer and said zones into portions of said regions contiguous with said interfaces to alter the electrical characteristics thereof; and oxidizing said porous silicon to form insulating material electrically isolating each of said regions.
Claim 10
Dependent Claim
18 words
The method in accordance with claim 7 wherein said layer of single crystal silicon is of P-type conductivity.
Claim 11
Dependent Claim
24 words
The method in accordance with claim 7 wherein forming a layer of single crystal silicon comprises introducing P-type conductivity imparting material into said substrate.
Claim 12
Dependent Claim
32 words
The method in accordance with claim 9 wherein introducing conductivity type imparting material into zones of said epitaxial layer comprises introducing P-type conductivity imparting material to convert said zones to P-type conductivity.
Claim 13
Dependent Claim
39 words
The method in accordance with claim 10 wherein diffusing conductivity type imparting material through the porous silicon includes diffusing N-type conductivity imparting material into said portions of said regions to convert the portions to N-type conductivity of low resistivity.
Claim 14
Dependent Claim
36 words
The method in accordance with claim 10 wherein diffusing conductivity type imparting material through the porous silicon includes diffusing P-type conductivity imparting material into said portions of said regions to convert the portions to P-type conductivity.
Claim 15
Dependent Claim
41 words
The method in accordance with claim 10 wherein oxidizing said porous silicon comprises heating in an oxidizing atmosphere to convert the porous silicon to silicon oxide and to further diffuse the conductivity type imparting material into said portions of said regions.
Claim 16
Dependent Claim
29 words
The method in accordance with claim 13 wherein converting the silicon of said layer and of said zones to porous silicon includes anodically treating in an aqueous etching solution.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-08 | 1990-06-09 | 1990-12-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-08 | 1994-06-09 | 1994-12-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-08 | 1998-06-09 | 1998-12-09 | $7700.00 | Window Closed / Lapsed |