Abstract A semiconductor light-emitting device according to the present invention is made by forming an undoped In 1-X Ga X As 1-Y P Y active layer on a n-InP clad layer, a p-In 1-X Ga X As 1-Y P Y active layer on said undoped active layer, and a p-n junction position in the interface between said n-InP layer and said undoped In 1-X Ga X As 1-Y P Y active layer or in the neighborhood thereof. By this structure, the heretofore inevitable problem of remote junction can be solved and the half value width of the light-emitting spectrum can be reduced. Therefore, the semiconductor light-emitting device according to the present invention provides higher response frequency and larger light-emitting output than the conventional semiconductor light-emitting device.
In a semiconductor light-emitting device an arrangement comprising: an n-InP clad layer, an undoped In 1-x Ga x As 1-y P y active layer formed on said n-InP clad layer, and a p-In 1-x Ga x As 1-y P y active layer formed on said undoped In 1-x Ga x As 1-y P y active layer, a p-n junction being formed at an interface region between said n-InP layer and said undoped In 1-x Ga x As 1-y P y active layer.
Claim 2
Dependent Claim
82 words
In a semiconductor light-emitting device an arrangement comprising: an n-InP clad layer, an undoped In 1-x Ga x As 1-y P y active layer formed on said n-InP clad layer, and a p-In 1-x Ga x As 1-y P y active layer formed on said undoped In 1-x Ga x As 1-y P y active layer, a p-n junction being formed at an interface region between said n-InP layer and said undoped In 1-x Ga x As 1-y P y active layer.
Claim 3
Dependent Claim
62 words
An arrangement as set forth in claim 1 wherein said undoped In 1-x Ga x As 1-y P y active layer and said p-In 1-x Ga x As 1-y P y active layer are lattice-matched with said n-InP clad layer, respectively, and the band gap energy of each of said active layers is in the range from 0.75 eV to 1.2 eV.
Claim 4
Dependent Claim
63 words
An arrangement as set forth in claim 1, wherein the carrier density of said undoped In 1-x Ga x As 1-Y P Y active layer is 1×10 17 cm -3 or lower, and the carrier density of said p-In 1-X Ga X As 1-Y P Y active layer is in the range from 1×10 18 cm -3 to 1×10 19 cm -3 .
Claim 5
Dependent Claim
120 words
An arrangement as set forth in claim 1, wherein the thickness d of said undoped In 1-X ga X As 1-Y P Y active layer is in the range defined by: A(P/10.sup.19)μm≦d≦B (P/10.sup.19)μm where P denotes the carrier density of said p-In 1-X Ga X As 1-Y P Y active layer, and the values of A and B are A=0.3, B=1.5 when Zn is used as the dopant of said p-In 1-X ga X As 1-Y P Y active layer and A=0.1, B=0.5 when any of Cd, Mg and Be is used as said dopant, and the thickness of said p-In 1-X Ga X As 1-Y P Y active layer is in the range from 0.1 μm to 2.0 μm.