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US4623907A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor light-emitting device

Assignee: Sumitomo Electric Industries Ltd
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Filing: 1984-10-18
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Granted: 1986-11-18
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Expires: 2004-10-18
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Abstract

Abstract A semiconductor light-emitting device according to the present invention is made by forming an undoped In 1-X Ga X As 1-Y P Y active layer on a n-InP clad layer, a p-In 1-X Ga X As 1-Y P Y active layer on said undoped active layer, and a p-n junction position in the interface between said n-InP layer and said undoped In 1-X Ga X As 1-Y P Y active layer or in the neighborhood thereof. By this structure, the heretofore inevitable problem of remote junction can be solved and the half value width of the light-emitting spectrum can be reduced. Therefore, the semiconductor light-emitting device according to the present invention provides higher response frequency and larger light-emitting output than the conventional semiconductor light-emitting device.

Inventors

  • 👤 Hiroshi Okuda

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 19:03
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/8215; H10H20/811; H10H20/822; H10H20/824

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 82 words
In a semiconductor light-emitting device an arrangement comprising: an n-InP clad layer, an undoped In 1-x Ga x As 1-y P y active layer formed on said n-InP clad layer, and a p-In 1-x Ga x As 1-y P y active layer formed on said undoped In 1-x Ga x As 1-y P y active layer, a p-n junction being formed at an interface region between said n-InP layer and said undoped In 1-x Ga x As 1-y P y active layer.
Claim 2
Dependent Claim 82 words
In a semiconductor light-emitting device an arrangement comprising: an n-InP clad layer, an undoped In 1-x Ga x As 1-y P y active layer formed on said n-InP clad layer, and a p-In 1-x Ga x As 1-y P y active layer formed on said undoped In 1-x Ga x As 1-y P y active layer, a p-n junction being formed at an interface region between said n-InP layer and said undoped In 1-x Ga x As 1-y P y active layer.
Claim 3
Dependent Claim 62 words
An arrangement as set forth in claim 1 wherein said undoped In 1-x Ga x As 1-y P y active layer and said p-In 1-x Ga x As 1-y P y active layer are lattice-matched with said n-InP clad layer, respectively, and the band gap energy of each of said active layers is in the range from 0.75 eV to 1.2 eV.
Claim 4
Dependent Claim 63 words
An arrangement as set forth in claim 1, wherein the carrier density of said undoped In 1-x Ga x As 1-Y P Y active layer is 1×10 17 cm -3 or lower, and the carrier density of said p-In 1-X Ga X As 1-Y P Y active layer is in the range from 1×10 18 cm -3 to 1×10 19 cm -3 .
Claim 5
Dependent Claim 120 words
An arrangement as set forth in claim 1, wherein the thickness d of said undoped In 1-X ga X As 1-Y P Y active layer is in the range defined by: A(P/10.sup.19)μm≦d≦B (P/10.sup.19)μm where P denotes the carrier density of said p-In 1-X Ga X As 1-Y P Y active layer, and the values of A and B are A=0.3, B=1.5 when Zn is used as the dopant of said p-In 1-X ga X As 1-Y P Y active layer and A=0.1, B=0.5 when any of Cd, Mg and Be is used as said dopant, and the thickness of said p-In 1-X Ga X As 1-Y P Y active layer is in the range from 0.1 μm to 2.0 μm.

References Cited (Backward Citations)

US4132960A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-11-17 1990-05-19 1990-11-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-11-17 1994-05-19 1994-11-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-11-17 1998-05-19 1998-11-18 $7700.00 Window Closed / Lapsed

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