US4622736A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Schottky barrier diodes
Assignee: Maxim Integrated Products Inc
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Filing: 1984-01-30
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Granted: 1986-11-18
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Expires: 2004-01-30
Abstract
Abstract A Schottky barrier diode is made from a substrate of semiconductor material by forming, on a major surface of the wafer, a layer of dielectric material defining a restricted opening through which the semiconductor material is exposed. A metal which forms with the semiconductor material a single phase compound which is inherently stable at temperatures up to 600 deg. C. is deposited into the opening, into contact with the exposed semiconductor material. By heating the substrate and the metal deposited thereon, the metal reacts with the semiconductor material to form a body of the single phase compound. A layer of refractory metal which reacts with the dielectric material is deposited over the dielectric material and the body of single phase compound.
Inventors
- 👤 Vladimir F. Drobny
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 09:56
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S148/139; Y10S148/147
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
109 words
A method of manufacturing a Schottky barrier diode utilizing a substrate of semiconductor material, comprising forming a layer of dielectric material on a major surface of said substrate, said layer defining a restricted opening through which the substrate is exposed, forming within said opening at said major surface a body of a single phase compound of semiconductor material and a first metal, which compound is intrinsically stable at temperatures up to 600 deg. C. and which first metal has an intrinsic barrier height within the range from about 0.6 eV to about 0.8 eV, and depositing a layer of a refractory metal over the dielectric material and said body.
Claim 2
Independent Claim
109 words
A method of manufacturing a Schottky barrier diode utilizing a substrate of semiconductor material, comprising forming a layer of dielectric material on a major surface of said substrate, said layer defining a restricted opening through which the substrate is exposed, forming within said opening at said major surface a body of a single phase compound of semiconductor material and a first metal, which compound is intrinsically stable at temperatures up to 600 deg. C. and which first metal has an intrinsic barrier height within the range from about 0.6 eV to about 0.8 eV, and depositing a layer of a refractory metal over the dielectric material and said body.
Claim 3
Dependent Claim
18 words
A method according to claim 1, wherein said semiconductor material is silicon and said just metal is vanadium.
Claim 4
Dependent Claim
170 words
An improved method of manufacturing a Schottky barrier diode utilizing a substrate of semiconductor material, comprising forming a layer of dielectric material on a major surface of said substrate, said layer defining a restricted opening through which the substrate is exposed, forming within said opening at said major surface a body of a compound of said semiconductor material and a first metal, and depositing a layer of a refractory metal over the dielectric material and said body, and wherein the improvement resides in that said first metal is such that (a) combination of the semiconductor material with the first metal is favored over combination of the semiconductor material with the refractory metal; (b) the first metal forms a single phase compound with the semiconductor material, which compound is intrinsically stable at temperatures up to 600 deg. C.; and (c) the work function of the first metal is sufficiently high that it does not cause an accumulation of charge carriers at the interface between the said body and the semiconductor material.
Claim 5
Dependent Claim
170 words
An improved method of manufacturing a Schottky barrier diode utilizing a substrate of semiconductor material, comprising forming a layer of dielectric material on a major surface of said substrate, said layer defining a restricted opening through which the substrate is exposed, forming within said opening at said major surface a body of a compound of said semiconductor material and a first metal, and depositing a layer of a refractory metal over the dielectric material and said body, and wherein the improvement resides in that said first metal is such that (a) combination of the semiconductor material with the first metal is favored over combination of the semiconductor material with the refractory metal; (b) the first metal forms a single phase compound with the semiconductor material, which compound is intrinsically stable at temperatures up to 600 deg. C.; and (c) the work function of the first metal is sufficiently high that it does not cause an accumulation of charge carriers at the interface between the said body and the semiconductor material.
Claim 6
Dependent Claim
30 words
A method according to claim 3, wherein the semiconductor material is silicon and the intrinsic barrier height of the silicide of the first metal is at least about 0.64 eV.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-17 | 1990-05-19 | 1990-11-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-17 | 1994-05-19 | 1994-11-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-17 | 1998-05-19 | 1998-11-18 | $7700.00 | Window Closed / Lapsed |