US4622447A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave apparatus for vacuum treating and heating a semiconductor substrate
Assignee: Fujitsu Ltd
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Filing: 1985-02-25
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Granted: 1986-11-11
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Expires: 2005-02-25
Abstract
Abstract A semiconductor substrate arranged in a vacuum treating chamber is heated by using microwaves. The chamber is provided with a window plate pervious to microwaves, on which window plate the substrate is mounted. A microwave generator is arranged outside of the chamber. The radiated microwaves are guided to the window plate, penetrate it, and are absorbed by the semiconductor substrate, with result that the substrate is directly heated to a predetermined temperature in a short time. Since no microwaves leak through the substrate, no parts in the chamber are heated.
Inventors
- 👤 Minoru Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:47
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; C; C23; C23C; C23C14/00; C23C14/22; C23C14/54; C23C14/541
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
151 words
An apparatus for treating and heating a semiconductor substrate with microwaves, having a back surface and having a top surface to be treated, under a reduced pressure comprising: a vacuum treating chamber having an opening, having an inside space and having a window plate pervious to microwaves placed over said opening; and a microwave generator arranged outside of said vacuum treating chamber and positioned to radiate microwaves into said vacuum treating chamber through said opening, the semiconductor substrate being arranged in said vacuum treating chamber so as to expose the top surface of the semiconductor substrate to be treated to the inside space of said vacuum treating chamber and to cover said window plate with the back of the semiconductor substrate, the semiconductor substrate being larger than said opening in said vacuum treating chamber for shielding the inside space of said vacuum treating chamber from microwaves generated by said microwave generator.
Claim 2
Independent Claim
151 words
An apparatus for treating and heating a semiconductor substrate with microwaves, having a back surface and having a top surface to be treated, under a reduced pressure comprising: a vacuum treating chamber having an opening, having an inside space and having a window plate pervious to microwaves placed over said opening; and a microwave generator arranged outside of said vacuum treating chamber and positioned to radiate microwaves into said vacuum treating chamber through said opening, the semiconductor substrate being arranged in said vacuum treating chamber so as to expose the top surface of the semiconductor substrate to be treated to the inside space of said vacuum treating chamber and to cover said window plate with the back of the semiconductor substrate, the semiconductor substrate being larger than said opening in said vacuum treating chamber for shielding the inside space of said vacuum treating chamber from microwaves generated by said microwave generator.
Claim 3
Dependent Claim
29 words
An apparatus according to claim 1, wherein said window pervious to microwaves is a plate made of a material selected from the group consisting of quartz, glass and ceramic.
Claim 4
Dependent Claim
21 words
An apparatus according to claim 1, further comprising a waveguide positioned between said microwave generator and said window pervious to microwaves.
Claim 5
Independent Claim
160 words
An apparatus for vacuum treating and heating a semiconductor substrate with microwaves, having a first surface to be treated and having a second surface, comprising: a vacuum treating chamber including an opening and a pervious window placed over said opening which allows microwaves to penetrate therethrough, said vacuum treating chamber having an inner treatment space, the second surface of the semiconductor substrate being positioned so as to substantially overlay the entire area of said pervious window, the first surface of the semiconductor substrate facing the inner treatment space of said vacuum treating chamber; and a microwave generator, positioned outside said vacuum treating chamber, for radiating microwaves into said vacuum treating chamber through said opening and said pervious window placed over said opening so as to heat the semiconductor substrate, the semiconductor substrate being larger than said opening in said vacuum treating chamber and shielding the inner treatment space of said vacuum treating chamber from microwaves generated by said microwave generator.
Claim 6
Independent Claim
160 words
An apparatus for vacuum treating and heating a semiconductor substrate with microwaves, having a first surface to be treated and having a second surface, comprising: a vacuum treating chamber including an opening and a pervious window placed over said opening which allows microwaves to penetrate therethrough, said vacuum treating chamber having an inner treatment space, the second surface of the semiconductor substrate being positioned so as to substantially overlay the entire area of said pervious window, the first surface of the semiconductor substrate facing the inner treatment space of said vacuum treating chamber; and a microwave generator, positioned outside said vacuum treating chamber, for radiating microwaves into said vacuum treating chamber through said opening and said pervious window placed over said opening so as to heat the semiconductor substrate, the semiconductor substrate being larger than said opening in said vacuum treating chamber and shielding the inner treatment space of said vacuum treating chamber from microwaves generated by said microwave generator.
Claim 7
Dependent Claim
27 words
An apparatus according to claim 4, wherein said pervious window comprises a plate made of a material selected from the group consisting of quartz, glass and ceramic.
Claim 8
Dependent Claim
32 words
An apparatus according to claim 4, further comprising a waveguide positioned between said microwave generator and said pervious window for conducting the microwaves generated by said microwave generator to said pervious window.
References Cited (Backward Citations)
US2599033A
Cited
US3276138A
Cited
US3551090A
Cited
JPS5214370A
Cited
US4128751A
Cited
US4138306A
Cited
US4474625A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-10 | 1990-05-12 | 1990-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-10 | 1994-05-12 | 1994-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-10 | 1998-05-12 | 1998-11-11 | $7700.00 | Window Closed / Lapsed |