Reset circuit for MOS imager array

Claim 2

An image-sensing device, comprising: a photosensing array comprising a plurality of photosensing elements arranged in intersecting rows and columns, photosensing elements arranged along a row being simultaneously activated for reading, a signal from any photosensing element activated along a column being read as a signal for that column; and means for sequentially resetting said columns of photosensing elements wherein all photosensing elements within each column are reset in a simultaneous operation.

Claim 3

The image sensing device of claim 1, wherein said array further comprises a first set of conductors defining said rows and a second set of conductors defining said columns, conductors of each said set being parallel within each set and perpendicular between sets, each of said photosensing elements being controlled by one conductor of said first set and having its signal transferred on one conductor of said second set, and wherein said resetting means comprises means for simultaneously applying a predetermined first potential to all conductors of said first set of conductors.

Claim 4

The image sensing device of claim 2, wherein said resetting means further comprises means for sequentially applying a predetermined second potential to said conductors of said second set.

Claim 5

The image sensing device of claim 3, wherein said means for simultaneously applying said predetermined first potential to all conductors of said first set of conductors comprises interlace gating means comprising a plurality of field-effect transistors, one transistor for each conductor of said first set, said transistor having a channel coupled between a chip reset signal terminal and a respective conductor of said first set and having a gate coupled to a line reset signal terminal.

Claim 6

The image sensing device of claim 4, wherein said line reset signal terminal is a terminal of a periodic signal having a period longer than the time required to sequentially apply said second potential to all said conductors of said second sets.

Claim 7

The image sensing device of claim 5, wherein each photo-sensing element comprises a photosensitive MOS element and a field-effect transistor connected between said MOS element and one conductor of said second set and the gate of which is connected to one conductor of said first set, wherein the application of said first potential to a first conductor of said first set causes the field-effect transistors in all photosensing elements controlled by said first conductor to conduct and wherein the concurrent application of said second potential to a second conductor of said second set charges the MOS element controlled by said first conductor and connected to said second conductor.

Claim 8

An image sensing device comprising: an array comprising first and second sets of conductors, conductors of each set being parallel to one another and conductors of said first and second sets being perpendicular to one another and further a plurality of photosensitive elements, a separate photosensitive element being operatively coupled to a conductor of said first set and to a conductor of said second set at any intersection of said conductors of said first and second set; a vertical shift register; interlace buffer means for interlacingly scanning said conductors of said first set in response to outputs of said vertical shift register, said interlace buffer means comprising a plurality of field-effect transistors, each having a channel coupled between a respective one of said conductors of said first set and a reset signal terminal; means for applying a pulsed signal to said reset signal terminal; a horizontal shift register; an amplifier for amplyfing a signal applied to its input onto an output terminal and for setting said input to a reference potential; and output switch means for sequentially coupling said second conductors to the input terminal of said amplifier in response to outputs of said horizontal shift register.

Claim 9

An image sensing device comprising: an array comprising first and second sets of conductors, conductors of each set being parallel to one another and conductors of said first and second sets being perpendicular to one another and further a plurality of photosensitive elements, a separate photosensitive element being operatively coupled to a conductor of said first set and to a conductor of said second set at any intersection of said conductors of said first and second set; a vertical shift register; interlace buffer means for interlacingly scanning said conductors of said first set in response to outputs of said vertical shift register, said interlace buffer means comprising a plurality of field-effect transistors, each having a channel coupled between a respective one of said conductors of said first set and a reset signal terminal; means for applying a pulsed signal to said reset signal terminal; a horizontal shift register; an amplifier for amplyfing a signal applied to its input onto an output terminal and for setting said input to a reference potential; and output switch means for sequentially coupling said second conductors to the input terminal of said amplifier in response to outputs of said horizontal shift register.

Claim 10

The image sensing device of claim 7, wherein said field-effect transistors have gates coupled in common to a clock signal terminal.

Claim 11

The image sensing device of claim 4, wherein said resetting means applies a pulsed signal to said chip reset signal terminal.