Patent US4618542A successfully refreshed from Google Patents.
US4618542A
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Magnetic thin film
Assignee: TDK Corp
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Filing: 1984-11-21
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Granted: 1986-10-21
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Expires: 2004-11-21
Abstract
Abstract A magnetic thin film comprised of at least one, usually two magnetic metals selected from iron, nickel, and cobalt is vapor phase grown on a substrate, for example, polyimide film by introducing chemical compounds of the metals in vapor form, a reducing gas, and optionally, an oxidizing gas, into a vacuum chamber where the substrate is placed and preferably heated to a temperature of at least 100° C., and subjecting the reaction gases to plasma excitation, thereby achieving the vapor phase growth of the magnetic thin film on the substrate.
Inventors
- 👤 Haruyuki Morita
- 👤 Jiro Yoshinari
- 👤 Masatoshi Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:04
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/84; G11B5/85; H; H01; H01F; H01F41/00; H01F41/14; H01F41/20; H01F41/22; Y; Y10; Y10S; Y10S428/00; Y10S428/90
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
121 words
A magnetic crystalline thin film comprised of at least one magnetic metal and vapor phase grown on a substrate, said thin film being prepared by a process comprising the steps of introducing a chemical compound of the metal in vapor form and a reducing gas into an evacuated vacuum chamber where the substrate is placed, subjecting the reaction gases to plasma excitation, thereby achieving the vapor phase growth of the magnetic thin film on the substrate while the substrate is held at a temperature of lower than 100° C., and heat treating the metal thin film at a temperature of at least 200° C. in a non-oxidizing atmosphere or at a temperature of at least 100° C. in a non-oxidizing plasma.
Claim 2
Dependent Claim
121 words
A magnetic crystalline thin film comprised of at least one magnetic metal and vapor phase grown on a substrate, said thin film being prepared by a process comprising the steps of introducing a chemical compound of the metal in vapor form and a reducing gas into an evacuated vacuum chamber where the substrate is placed, subjecting the reaction gases to plasma excitation, thereby achieving the vapor phase growth of the magnetic thin film on the substrate while the substrate is held at a temperature of lower than 100° C., and heat treating the metal thin film at a temperature of at least 200° C. in a non-oxidizing atmosphere or at a temperature of at least 100° C. in a non-oxidizing plasma.
Claim 3
Dependent Claim
16 words
The magnetic thin film according to claim 1 wherein said metal compound is a metal carbonyl.
Claim 4
Dependent Claim
18 words
The magnetic thin film according to claim 1 wherein the metal is selected from iron, cobalt, and nickel.
Claim 5
Dependent Claim
14 words
The magnetic thin film according to claim 1 wherein the reducing gas is hydrogen.
Claim 6
Dependent Claim
112 words
A magnetic crystalline thin film comprised of at least one magnetic metal oxide and vapor grown on a substrate, said thin film being prepared by a process comprising the steps of introducing a chemical compound of the metal in vapor form, a reducing gas, and an oxidizing gas into an evacuated vacuum chamber where the substrate is placed, the reducing gas and the oxidizing gas being mixed in a ratio by volume of from 99.5:0.5 to 20:80, and subjecting the reaction gases to plasma excitation, thereby achieving the vapor phase growth of the magnetic thin film on the substrate while the substrate is heated to a temperature of at least 100° C.
Claim 7
Dependent Claim
112 words
A magnetic crystalline thin film comprised of at least one magnetic metal oxide and vapor grown on a substrate, said thin film being prepared by a process comprising the steps of introducing a chemical compound of the metal in vapor form, a reducing gas, and an oxidizing gas into an evacuated vacuum chamber where the substrate is placed, the reducing gas and the oxidizing gas being mixed in a ratio by volume of from 99.5:0.5 to 20:80, and subjecting the reaction gases to plasma excitation, thereby achieving the vapor phase growth of the magnetic thin film on the substrate while the substrate is heated to a temperature of at least 100° C.
Claim 8
Dependent Claim
16 words
The magnetic thin film according to claim 5 wherein said metal compound is a metal carbonyl.
Claim 9
Dependent Claim
18 words
The magnetic thin film according to claim 5 wherein the metal is selected from iron, cobalt, and nickel.
Claim 10
Dependent Claim
14 words
The magnetic thin film according to claim 5 wherein said reducing gas is hydrogen.
Claim 11
Dependent Claim
14 words
The magnetic thin film according to claim 5 wherein said oxidizing gas is oxygen.
Claim 12
Dependent Claim
137 words
A magnetic crystalline thin film comprised of at least one magnetic metal oxide and vapor grown on a substrate, said thin film being prepared by a process comprising the steps of introducing a chemical compound of the metal in vapor form, a reducing gas, and an oxidizing gas into an evacuated vacuum chamber where the substrate is placed, the reducing gas and the oxidizing gas being mixed in a ratio by volume of from 99.5:0.5 to 20:80, subjecting the reaction gases to plasma excitation, thereby achieving the vapor phase growth of the magnetic thin film on the substrate while the substrate is held at a temperature of lower than 100° C., and heat treating the magnetic thin film at a temperature of at least 200° C. or at a temperature of at least 100° C. in plasma.
Claim 13
Dependent Claim
137 words
A magnetic crystalline thin film comprised of at least one magnetic metal oxide and vapor grown on a substrate, said thin film being prepared by a process comprising the steps of introducing a chemical compound of the metal in vapor form, a reducing gas, and an oxidizing gas into an evacuated vacuum chamber where the substrate is placed, the reducing gas and the oxidizing gas being mixed in a ratio by volume of from 99.5:0.5 to 20:80, subjecting the reaction gases to plasma excitation, thereby achieving the vapor phase growth of the magnetic thin film on the substrate while the substrate is held at a temperature of lower than 100° C., and heat treating the magnetic thin film at a temperature of at least 200° C. or at a temperature of at least 100° C. in plasma.
Claim 14
Dependent Claim
16 words
The magnetic thin film according to claim 10 wherein said metal compound is a metal carbonyl.
Claim 15
Dependent Claim
18 words
The magnetic thin film according to claim 10 wherein the metal is selected from iron, cobalt, and nickel.
Claim 16
Dependent Claim
14 words
The magnetic thin film according to claim 10 wherein said reducing gas is hydrogen.
Claim 17
Dependent Claim
14 words
The magnetic thin film according to claim 11 wherein said oxidizing gas is oxygen.
Claim 18
Dependent Claim
18 words
The magnetic thin film of claim 10, wherein the heat treatment is carried out in an oxidizing atmosphere.
References Cited (Backward Citations)
US3206325A
Cited
US4419381A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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