Patent US4618510A successfully refreshed from Google Patents.
US4618510A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pre-passivated sub-micrometer gate electrodes for MESFET devices
Assignee: Agilent Technologies Inc
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Filing: 1984-09-05
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Granted: 1986-10-21
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Expires: 2004-09-05
Abstract
Abstract A method of fabricating sub-micrometer gates in a semiconductor device is disclosed in which a pre-passivation layer is formed over the gate region during fabrication. This pre-passivation layer protects the gate and underlying gate trough region from surface contamination during device fabrication. Sub-micrometer gate lengths are obtained by use of optical lithography, e.g., angle-shadow metal evaporation techniques and chemical lift-off methods.
Inventors
- 👤 Tun S. Tan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:47
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; H10D64/0126; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95; Y10S438/951
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
160 words
A method for producing a device in a semiconductor wafer comprising the steps of: forming a dielectric layer over a first region of a surface of the semiconductor wafer; forming a first and second contact on second and third regions of the wafer surface, the first and second contacts being separated by the dielectric layer; forming a first coating layer over the first and second contacts and the dielectric layer between the contacts, the first coating having an opening over a first region of the dielectric layer, thereby leaving an exposed area of the dielectric layer; forming a first metal layer over the first coating layer and a portion of the dielectric layer by angle evaporation; removing the dielectric layer in the exposed area, thereby exposing a surface region of the wafer; forming a trough region in the exposed surface region of the wafer; and depositing a second metal layer on a portion of the wafer in the trough region.
Claim 2
Independent Claim
160 words
A method for producing a device in a semiconductor wafer comprising the steps of: forming a dielectric layer over a first region of a surface of the semiconductor wafer; forming a first and second contact on second and third regions of the wafer surface, the first and second contacts being separated by the dielectric layer; forming a first coating layer over the first and second contacts and the dielectric layer between the contacts, the first coating having an opening over a first region of the dielectric layer, thereby leaving an exposed area of the dielectric layer; forming a first metal layer over the first coating layer and a portion of the dielectric layer by angle evaporation; removing the dielectric layer in the exposed area, thereby exposing a surface region of the wafer; forming a trough region in the exposed surface region of the wafer; and depositing a second metal layer on a portion of the wafer in the trough region.
Claim 3
Dependent Claim
98 words
A method as in claim 1 wherein the step of forming the trough region in the exposed surface region of the wafer further comprises the steps of: removing the first metal layer and first coating layer; forming a second coating layer over the first and second contacts and portions of the dielectric layer, the second coating layer having an opening larger than and including the exposed surface region of the wafer over a portion of the first region of the dielectric layer; and forming a trough region in the exposed surface region of the wafer between the contacts.
Claim 4
Independent Claim
176 words
A method for producing a device in a semiconductor wafer comprising the steps of: forming a semiconductor layer over a surface of the semiconductor wafer; forming a dielectric layer over a first region of a surface of the semiconductor layer; forming a first and second contact on second and third regions of the semiconductor layer surface, the first and second contacts being separated by the dielectric layer; forming a first coating layer over the first and second contacts and the dielectric layer between the contacts, the first coating having an opening over a first region of the dielectric layer surface, thereby leaving an exposed area of the dielectric layer; forming a first metal layer over the first coating layer and a portion of the dielectric layer by angle evaporation; removing the dielectric layer in the exposed area, thereby exposing the surface region of the semiconductor layer; forming a trough region in the exposed surface region of the semiconductor layer; and depositing a second metal layer on a portion of the semiconductor layer in the trough region.
Claim 5
Independent Claim
176 words
A method for producing a device in a semiconductor wafer comprising the steps of: forming a semiconductor layer over a surface of the semiconductor wafer; forming a dielectric layer over a first region of a surface of the semiconductor layer; forming a first and second contact on second and third regions of the semiconductor layer surface, the first and second contacts being separated by the dielectric layer; forming a first coating layer over the first and second contacts and the dielectric layer between the contacts, the first coating having an opening over a first region of the dielectric layer surface, thereby leaving an exposed area of the dielectric layer; forming a first metal layer over the first coating layer and a portion of the dielectric layer by angle evaporation; removing the dielectric layer in the exposed area, thereby exposing the surface region of the semiconductor layer; forming a trough region in the exposed surface region of the semiconductor layer; and depositing a second metal layer on a portion of the semiconductor layer in the trough region.
Claim 6
Dependent Claim
100 words
A method as in claim 3 wherein the step of forming the trough region in the exposed surface region of the semiconductor layer further comprises the steps of: removing the first metal layer and first coating layer; forming a second coating layer over the first and second contacts and portions of the dielectric layer, the second coating layer having an opening larger than and including the exposed surface region of the wafer over a portion of the first region of the dielectric layer; and forming a trough region in the exposed surface region of the semiconductor layer between the contacts.
Claim 7
Dependent Claim
19 words
A method as in claim 4 wherein the step of forming a semiconductor layer comprises forming an epitaxial layer.
Claim 8
Independent Claim
185 words
A method for producing a device in a semiconductor wafer comprising the steps of: forming a dielectric layer over a first region of a surface of the semiconductor wafer; forming a first and second contact on second and third regions of the wafer surface, the first and second contacts being separated by the dielectric layer; forming a first coating layer over the first and second contacts and the dielectric layer between the contacts; forming a first metal layer over the first coating layer; forming a second coating layer over the first metal layer; forming an opening through first coating, first metal, and second coating layers over a portion of the dielectric layer, thereby leaving an exposed area of the dielectric layer; forming a second metal layer by angle evaporation over the second coating layer and a portion of the dielectric layer; removing the dielectric layer in the exposed area, thereby exposing a surface region of the wafer; forming a trough region in the exposed surface region of the wafer; and depositing a third metal layer on a portion of the wafer in the trough region.
Claim 9
Independent Claim
185 words
A method for producing a device in a semiconductor wafer comprising the steps of: forming a dielectric layer over a first region of a surface of the semiconductor wafer; forming a first and second contact on second and third regions of the wafer surface, the first and second contacts being separated by the dielectric layer; forming a first coating layer over the first and second contacts and the dielectric layer between the contacts; forming a first metal layer over the first coating layer; forming a second coating layer over the first metal layer; forming an opening through first coating, first metal, and second coating layers over a portion of the dielectric layer, thereby leaving an exposed area of the dielectric layer; forming a second metal layer by angle evaporation over the second coating layer and a portion of the dielectric layer; removing the dielectric layer in the exposed area, thereby exposing a surface region of the wafer; forming a trough region in the exposed surface region of the wafer; and depositing a third metal layer on a portion of the wafer in the trough region.
Claim 10
Independent Claim
201 words
A method for producing a device in a semiconductor wafer comprising the steps of: forming a semiconductor layer over a surface of the semiconductor wafer; forming a dielectric layer over a first portion of a surface of the semiconductor layer; forming a first and second contact on second and third regions of the semiconductor layer surface, the first and second contacts being separated by the dielectric layer; forming a first coating layer over the first and second contacts and the dielectric layer between the contacts; forming a first metal layer over the first coating layer; forming a second coating layer over the first metal layer; forming an opening through the first coating, first metal and second coating layers over a portion of the dielectric layer, thereby leaving an exposed area of the dielectric layer; forming a second metal layer by angle evaporation over the second coating layer and a portion of the dielectric layer; removing the dielectric layer in the exposed area, thereby exposing a surface region of the semiconductor layer; forming a trough region in the exposed surface region of the semiconductor layer; and depositing a third metal layer on a portion of the semiconductor layer in the trough region.
Claim 11
Independent Claim
201 words
A method for producing a device in a semiconductor wafer comprising the steps of: forming a semiconductor layer over a surface of the semiconductor wafer; forming a dielectric layer over a first portion of a surface of the semiconductor layer; forming a first and second contact on second and third regions of the semiconductor layer surface, the first and second contacts being separated by the dielectric layer; forming a first coating layer over the first and second contacts and the dielectric layer between the contacts; forming a first metal layer over the first coating layer; forming a second coating layer over the first metal layer; forming an opening through the first coating, first metal and second coating layers over a portion of the dielectric layer, thereby leaving an exposed area of the dielectric layer; forming a second metal layer by angle evaporation over the second coating layer and a portion of the dielectric layer; removing the dielectric layer in the exposed area, thereby exposing a surface region of the semiconductor layer; forming a trough region in the exposed surface region of the semiconductor layer; and depositing a third metal layer on a portion of the semiconductor layer in the trough region.
Claim 12
Dependent Claim
19 words
A method as in claim 7 wherein the step of forming a semiconductor layer comprises forming an epitaxial layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-20 | 1990-04-21 | 1990-10-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-20 | 1994-04-21 | 1994-10-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-20 | 1998-04-21 | 1998-10-21 | $7700.00 | Window Closed / Lapsed |