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US4617252A
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Antireflective coatings for use in the manufacture of semi-conductor devices, methods and solutions for making such coatings, and the method for using such coatings to absorb light in ultraviolet photolithography processes
Assignee: Philip A Hunt Chemical Corp
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Filing: 1984-06-12
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Granted: 1986-10-14
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Expires: 2004-06-12
Abstract
Abstract Disclosed are antireflective layers for use in the manufacture of semi-conductor devices, methods and solutions for making such antireflective layers, and the use of such antireflective layers to absorb light in ultraviolet photolithography. The antireflective layers that are utilized comprise a polyphenylquinoxaline.
Inventors
- 👤 William F. Cordes, III
- 👤 Alfred T. Jeffries, III
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:24
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
246 words
A method of reducing reflections during the exposure of a photoresist layer in a semi-conductor device comprising: (a) applying an antireflective layer comprising a polyphenylquinoxaline and having a thickness of less than about 1.0 micron to a semi-conductor device comprising a silicon wafer having at least one semi-conductor element and a layer of a non-conductor on one of its surfaces; (b) applying on top of the antireflective layer a photoresist layer comprising a material whose solubility characteristics in certain solvents is affected by exposure to ultraviolet radiation having a wavelength of from about 500 to about 350 nm, to obtain a semi-conductor device carrying an antireflective layer underneath a photoresist layer; (c) selectively exposing a portion of the photoresist layer to ultraviolet light having a wavelength of from about 500 to about 350 nm, whereby at least a portion of the ultraviolet light passes through the photoresist layer into the antireflective layer and is absorbed by the antireflective layer; (d) developing the photoresist layer to remove a portion of the photoresist layer from the semi-conductor device and to uncover a portion of the polyphenylquinoxaline layer underlying the photoresist layer; (e) removing the portion of the polyphenylquinoxaline layer left uncovered in step (d) to uncover a portion of the layer underlying the polyphenylquinoxaline layer; (f) removing the portion of the layer underlying the polyphenylquinoxaline layer left uncovered in step (e); and (g) removing the portion of the photoresist and polyphenylquinoxaline layers left remaining after step (f) above.
Claim 2
Independent Claim
246 words
A method of reducing reflections during the exposure of a photoresist layer in a semi-conductor device comprising: (a) applying an antireflective layer comprising a polyphenylquinoxaline and having a thickness of less than about 1.0 micron to a semi-conductor device comprising a silicon wafer having at least one semi-conductor element and a layer of a non-conductor on one of its surfaces; (b) applying on top of the antireflective layer a photoresist layer comprising a material whose solubility characteristics in certain solvents is affected by exposure to ultraviolet radiation having a wavelength of from about 500 to about 350 nm, to obtain a semi-conductor device carrying an antireflective layer underneath a photoresist layer; (c) selectively exposing a portion of the photoresist layer to ultraviolet light having a wavelength of from about 500 to about 350 nm, whereby at least a portion of the ultraviolet light passes through the photoresist layer into the antireflective layer and is absorbed by the antireflective layer; (d) developing the photoresist layer to remove a portion of the photoresist layer from the semi-conductor device and to uncover a portion of the polyphenylquinoxaline layer underlying the photoresist layer; (e) removing the portion of the polyphenylquinoxaline layer left uncovered in step (d) to uncover a portion of the layer underlying the polyphenylquinoxaline layer; (f) removing the portion of the layer underlying the polyphenylquinoxaline layer left uncovered in step (e); and (g) removing the portion of the photoresist and polyphenylquinoxaline layers left remaining after step (f) above.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the antireflective layer has a thickness of from about 0.1 to about 0.8 micron.
Claim 4
Dependent Claim
28 words
The method of claim 1 wherein the antireflective layer is applied on top of the layer of a non-conductor on one of the surfaces of the silicon wafer.
Claim 5
Dependent Claim
14 words
The method of claim 3 wherein the layer of a non-conductor comprises silicon dioxide.
Claim 6
Dependent Claim
31 words
The method of claim 1 in which the semi-conductor device further comprises an interconnection conductor layer and further wherein the antireflective layer is applied on top of the interconnection conductor layer.
Claim 7
Dependent Claim
23 words
The method of claim 5 wherein the interconnection conductor layer comprises a metal selected from the group consisting of aluminum, tungsten and titanium.
Claim 8
Dependent Claim
29 words
The method of claim 1 in which the semi-conductor device further comprises a passivating layer and further wherein the antireflective layer is applied on top of the passivating layer.
Claim 9
Dependent Claim
12 words
The method of claim 7 wherein the passivating layer comprises silicon dioxide.
Claim 10
Dependent Claim
92 words
The method of claim 1 wherein the polyphenylquinoxaline is the reaction product of (A) an aromatic tetraamine compound selected from the group consisting of ##STR11## and mixtures thereof; and (B) a tetracarbonyl compound selected from the group consisting of ##STR12## and mixtures thereof; wherein X and A are, independently, a direct bond, O, ##STR13## S, SO, SO 2 , ##STR14## or CH 2 ; and each Y and each Z is, independently, monovalent C 1 to C 6 alkyl or monovalent aryl; R 1 and R 2 are, independently, H or OH.
Claim 11
Dependent Claim
14 words
The method of claim 9 wherein the polyphenylquinoxaline is the reaction product of ##STR15##
Claim 12
Dependent Claim
14 words
The method of claim 9 wherein the polyphenylquinoxaline is the reaction product of ##STR16##
References Cited (Backward Citations)
JPS568825A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-13 | 1990-04-14 | 1990-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-13 | 1994-04-14 | 1994-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-13 | 1998-04-14 | 1998-10-14 | $7700.00 | Window Closed / Lapsed |