Metalized film for constructing capacitors and a process for manufacturing said capacitors

Claim 1

A process for manufacturing capacitors, in which a lacquered metalized film is first of all formed by depositing on at least one of the faces of a dielectric film a plurality of parallel metalized strips which are then partially covered by strips of lacquer deposited parallel to the metalized strips but laterally offset with respect to the metalized strips so as to create non-lacquered strips on the metalized strips and non-metalized strips under the lacquer strips, the lacquering step consisting in coating with a solution of a dielectric inner solvent, followed by a drying step, in which the temperature and duration parameters are determined, depending on the lacquer used, so that the said lacquer layer comprises, at the end of this drying step a proportion of a residual solvents between 10 and 500 ppm with respect to the weight of the dielectric, said lacquered metalized film being then cut up into individual films comprising on at least one of the faces of the dielectric film a metalized layer comprising a non-metalized margin on its first edge, coated with a lacquer layer comprising a non-lacquered margin on its second edge, the metalized layers disposed on the two faces of the dielectric film comprising a margin placed on the first edge for one and on the second edge for the other and vice versa for the margins of the lacquer layers, each individual film then being wound, the capacitor thus formed being then subjected to a heat treatment so as to eliminate the air imprisoned in the capacitor during winding, on the one hand, and so as to bond the lacquer layers to each other or to the dielectric film, on the other, so as to obtain individual capacitors whose insulation resistance, measured at 100 DC volts, after a regeneration step at a DC voltage of the order of 100 volt/micron of thickness of dielectric, is greater than or equal to 50 Giga Ohms per microfarad.