Self-aligned rib-waveguide high power laser

Claim 2

Device comprising a semiconductor cladding layer, a large optical cavity (LOC) layer on the cladding layer, an active layer on the LOC layer, a cladding layer on said active layer, said active layer forming with one of said cladding layers a p-n junction capable when biased electrically of generating light in the active layer and emitting said light into the LOC layer, at least one of said cladding layers having a rib portion, said rib portion being thicker than the remainder of the cladding layer, an ohmic contact layer covering the top of the rib, and a barrier layer covering the sidewalls of the rib and the remainder of the cladding layer and responsive to an external electrical signal source, said barrier layer, when biased by said external signal source, capable of creating a refractive index difference Δn greater than 10 -3 in the cladding layer at the edge of said rib.

Claim 3

Device comprising: an n-type semiconductor cladding layer, an n-type large optical cavity (LOC) semiconductor layer on said n-type cladding layer, a active semiconductor layer on said LOC layer forming therewith an active heterostructure p-n junction capable, when appropriately biased, of emitting light from the active layer into the LOC layer, a p-type cladding layer forming over the active layer, said p-type cladding layer having a current and optical confinement portion of a first thickness, and a rib portion having a second thickness, said current and optical confinement portion and said rib portion constituting portions of the cladding layer, the cladding layer being a single homogeneous semiconductor layer, a contact layer covering selectively said rib portion of the p-type cladding layer, in precise registration therewith, and forming therewith an ohmic contact, and a metal layer formed over said contact layer and the p-type cladding layer and forming, with said current and optical confinement portion, a Schottky barrier contact, and forming, with said contact layer, an ohmic contact, said first and second thicknesses of the aforesaid cladding layer being selected so that an effective refractive index difference, Δn, of greater than 10 -3 is created at the edge of the rib portion.

Claim 4

Device comprising: an n-type semiconductor cladding layer, an n-type large optical cavity (LOC) semiconductor layer on said n-type cladding layer, a active semiconductor layer on said LOC layer forming therewith an active heterostructure p-n junction capable, when appropriately biased, of emitting light from the active layer into the LOC layer, a p-type cladding layer forming over the active layer, said p-type cladding layer having a current and optical confinement portion of a first thickness, and a rib portion having a second thickness, said current and optical confinement portion and said rib portion constituting portions of the cladding layer, the cladding layer being a single homogeneous semiconductor layer, a contact layer covering selectively said rib portion of the p-type cladding layer, in precise registration therewith, and forming therewith an ohmic contact, and a metal layer formed over said contact layer and the p-type cladding layer and forming, with said current and optical confinement portion, a Schottky barrier contact, and forming, with said contact layer, an ohmic contact, said first and second thicknesses of the aforesaid cladding layer being selected so that an effective refractive index difference, Δn, of greater than 10 -3 is created at the edge of the rib portion.

Claim 5

Device of claim 2 in which Δn is greater than 3×10 -3 .

Claim 6

Device of claim 2 in which said first thickness is less than 0.5 μm.

Claim 7

Device of claim 2 in which the LOC layer has a thickness of the range of 0.05 μm to 0.1 μm.

Claim 8

Device of claim 2 further including at least two reflecting surfaces on either side of said LOC layer forming an optical cavity resonator for sustaining coherent emission of radiation from said LOC layer.

Claim 9

Device of claim 6 in which the LOC layer comprises doped aluminum gallium arsenide.

Claim 10

Device of claim 7 in which the active layer and cladding layers comprise doped aluminum gallium arsenide.

Claim 11

Device of claim 8 in which the contact layer comprises gallum arsenide.

Claim 12

Device of claim 9 in which the metal layer comprises Ti/Pt.

Claim 13

Device of claim 8 in which the aluminum content of said active layer is less than that of the p-type cladding layer on one side and the LOC layer on the other.

Claim 14

Device of claim 11 in which the aluminum content of the LOC layer is less than that of the n-type cladding layer.

Claim 15

Device of claim 12 in which the aluminum content of the cladding layers is approximately the same.

Claim 16

Device of claim 12 in which the p-type cladding layer is doped with magnesium.

Claim 17

Device of claim 14 in which the n-type cladding layer and the LOC layer are doped with tellurium.