US4614959A
Expired / Lapsed
US
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Improved high voltage MOS transistor with field plate layers for preventing reverse field plate effect
Assignee: Sharp Corp
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Filing: 1984-09-28
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Granted: 1986-09-30
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Expires: 2004-09-28
Abstract
Abstract A metal oxide semiconductor device is featured by the provision of at least two field plate elements interposed by an insulating layer. The field plate elements are connected from a drain electrode and a source electrode. Otherwise, they are isolated from the respective drain electrode, source electrode, and gate electrode. Each of the field plate elements consists of Al, polycrystalline silicon, or the like. An extensive conductive layer is provided which overlaps vertically each of the field plate elements.
Inventors
- 👤 Kiyotoshi Nakagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:16
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D64/112; H10D30/00; H10D30/60; H10D30/601; H10D30/603; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/299; H10D62/307; H10D64/20; H10D64/23; H10D64/251; H10D64/258
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
258 words
A metal oxide semiconductor transistor device of a high voltage type comprising in combination: a semiconductor substrate having a conductivity of a first type; a source region formed in said semiconductor substrate, said source region having a conductivity of a second type opposite to that of said semiconductor substrate; a channel region of the same conductivity type as said semiconductor substrate formed to surround said source region; a drain region formed in said semiconductor substrate apart from said source region, said drain region having a conductivity of a second type opposite to that of said semiconductor substrate; a high resistant region surrounding said drain region, and positioned between said drain region and said source region, having the same conductivity type as said drain region; at least first, second and third insulating layers provided overlying each other and superimposed on and substantially covering said substrate; a drain electrode connected to said drain region; a source electrode connected to said source region; a gate electrode formed above said channel region having a portion of said first insulating layer inerpositioned therebetween; separate field plate layers interpositioned between said second and third insulating layers and connected respectively to said drain and source electrodes; and a conductive layer connected to at least one of said drain and source electrodes overlapping vertically with said field plate layers and interpositioned between said first and second insulating layers, the combination of said field plate layers and said conductive layer substantially covering said high resistant region and imparting a field plate effect to said high resistant region.
Claim 2
Dependent Claim
258 words
A metal oxide semiconductor transistor device of a high voltage type comprising in combination: a semiconductor substrate having a conductivity of a first type; a source region formed in said semiconductor substrate, said source region having a conductivity of a second type opposite to that of said semiconductor substrate; a channel region of the same conductivity type as said semiconductor substrate formed to surround said source region; a drain region formed in said semiconductor substrate apart from said source region, said drain region having a conductivity of a second type opposite to that of said semiconductor substrate; a high resistant region surrounding said drain region, and positioned between said drain region and said source region, having the same conductivity type as said drain region; at least first, second and third insulating layers provided overlying each other and superimposed on and substantially covering said substrate; a drain electrode connected to said drain region; a source electrode connected to said source region; a gate electrode formed above said channel region having a portion of said first insulating layer inerpositioned therebetween; separate field plate layers interpositioned between said second and third insulating layers and connected respectively to said drain and source electrodes; and a conductive layer connected to at least one of said drain and source electrodes overlapping vertically with said field plate layers and interpositioned between said first and second insulating layers, the combination of said field plate layers and said conductive layer substantially covering said high resistant region and imparting a field plate effect to said high resistant region.
Claim 3
Dependent Claim
23 words
The semiconductor device of claim 1, wherein said field plate layers including said extensive conductive layer are comprised of Al or polycrystalline silicon.
Claim 4
Dependent Claim
264 words
A metal oxide semiconductor transistor device of a high voltage type comprising in combination: a semiconductor substrate having a conductivity of a first type; a source region formed in said semiconductor substrate, said source region having a conductivity of a second type opposite to that of said semiconductor substrate; a channel region of the same conductivity type as said semiconductor substrate formed to surround said source region; a drain region formed in said semiconductor substrate apart from said source region, said drain region having a conductivity of a second type opposite to that of said semiconductor substrate; a high resistant region surrounding said drain region, and positioned between said drain region and said source region, having the same conductivity type as said drain region; at least first, second and third insulating layers provided overlying each other and superimposed on and substantially covering said substrate; a drain electrode connected to said drain region; a source electrode connected to said source region; a gate electrode formed above said channel region having a portion of said first insulating layer interpositioned therebetween; separate field plate layers interpositioned between said second and third insulating layers and connected respectively to said drain and source electrodes; and at least one additional field plate layer superimposed on said third insulating layer coupled to at least one of said drain electrode and source electrode overlapping vertically with said field plate layers interpositioned between said second and third insulating layers, the combination of said field plate layers substantially covering said high resistant region and imparting a field plate effect to said high resistant region.
Claim 5
Dependent Claim
264 words
A metal oxide semiconductor transistor device of a high voltage type comprising in combination: a semiconductor substrate having a conductivity of a first type; a source region formed in said semiconductor substrate, said source region having a conductivity of a second type opposite to that of said semiconductor substrate; a channel region of the same conductivity type as said semiconductor substrate formed to surround said source region; a drain region formed in said semiconductor substrate apart from said source region, said drain region having a conductivity of a second type opposite to that of said semiconductor substrate; a high resistant region surrounding said drain region, and positioned between said drain region and said source region, having the same conductivity type as said drain region; at least first, second and third insulating layers provided overlying each other and superimposed on and substantially covering said substrate; a drain electrode connected to said drain region; a source electrode connected to said source region; a gate electrode formed above said channel region having a portion of said first insulating layer interpositioned therebetween; separate field plate layers interpositioned between said second and third insulating layers and connected respectively to said drain and source electrodes; and at least one additional field plate layer superimposed on said third insulating layer coupled to at least one of said drain electrode and source electrode overlapping vertically with said field plate layers interpositioned between said second and third insulating layers, the combination of said field plate layers substantially covering said high resistant region and imparting a field plate effect to said high resistant region.
Claim 6
Dependent Claim
20 words
The semiconductor device of claim 1, wherein said at least one additional field plate layer comprises Al or polycrystalline silicon.
Claim 7
Dependent Claim
257 words
A metal oxide semiconductor transistor device of a high voltage type comprising in combination: a semiconductor substrate having a conductivity of a first type; a source region formed in said semiconductor substrate, said source region having a conductivity of a second type opposite to that of said semiconductor substrate; a channel region of the same conductivity type as said semiconductor substrate formed to surround said source region; a drain region formed in said semiconductor substrate apart from said source region, said drain region having a conductivity of a second type opposite to that of said semiconductor substrate; a high resistant region surrounding said drain region, and positioned between said drain region and said source region, having the same conductivity type as said drain region; at least first, second and third insulating layers provided overlying each other and superimposed on and substantially covering said substrate; a drain electrode connected to said drain region; a source electrode connected to said source region; a gate electrode formed above said channel region having a portion of said first insulating layer interpositioned therebetween; separate field plate layers interpositioned between said second and third insulating layers and connected respectively to said drain and source electrodes; and at least one floating field plate layer electrically insulated from said electrodes provided on at least one of said respective insulating layers, positioned so as to overlap vertically said remaining field plate layers, the combination of said field plate layers substantially covering said high resistant region and imparting a field plate effect to said high resistant region.
Claim 8
Dependent Claim
257 words
A metal oxide semiconductor transistor device of a high voltage type comprising in combination: a semiconductor substrate having a conductivity of a first type; a source region formed in said semiconductor substrate, said source region having a conductivity of a second type opposite to that of said semiconductor substrate; a channel region of the same conductivity type as said semiconductor substrate formed to surround said source region; a drain region formed in said semiconductor substrate apart from said source region, said drain region having a conductivity of a second type opposite to that of said semiconductor substrate; a high resistant region surrounding said drain region, and positioned between said drain region and said source region, having the same conductivity type as said drain region; at least first, second and third insulating layers provided overlying each other and superimposed on and substantially covering said substrate; a drain electrode connected to said drain region; a source electrode connected to said source region; a gate electrode formed above said channel region having a portion of said first insulating layer interpositioned therebetween; separate field plate layers interpositioned between said second and third insulating layers and connected respectively to said drain and source electrodes; and at least one floating field plate layer electrically insulated from said electrodes provided on at least one of said respective insulating layers, positioned so as to overlap vertically said remaining field plate layers, the combination of said field plate layers substantially covering said high resistant region and imparting a field plate effect to said high resistant region.
Claim 9
Dependent Claim
20 words
The semiconductor device of claim 5, wherein said at least one floating field plate layer comprises Al or polycrystalline silicon.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1989-09-29 | 1990-03-31 | 1990-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-29 | 1994-03-31 | 1994-09-30 | $3760.00 | Window Closed / Lapsed |
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