US4613401A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for dry etching a chromium or chromium oxide film
Assignee: Fujitsu Ltd
•
Filing: 1985-08-20
•
Granted: 1986-09-23
•
Expires: 2005-08-20
Abstract
Abstract The dry etching rate of a Cr film has been increased by adding ethyl or methyl alcohol vapor to an etchant gas containing a halide of a hydrocarbon such as CCl4 and oxygen gas. The dry etching rate increase is attributed to the reduction reaction of a dry etching product, CrO2Cl2, into chemically stable CrCl3, the reduction reaction suppresses deposition of Cr generated by the decomposition of chemically unstable CrO2Cl2.
Inventors
- 👤 Eiichi Hoshino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:37
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; C; C23; C23F; C23F4/00; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
81 words
An improved method for dry etching a chromium (Cr) or Cr-oxide film in which an etchant gas is used to remove the Cr or Cr-oxide film by chemically reacting said film with the etchant gas, the improvement comprising: subjecting the Cr or Cr-oxide film to a plasma of a gas mixture containing the vapors of a halide of a hydrocarbon and the vapors of an alcohol selected from a group consisting of CH 3 OH and C 2 H 5 OH.
Claim 2
Dependent Claim
81 words
An improved method for dry etching a chromium (Cr) or Cr-oxide film in which an etchant gas is used to remove the Cr or Cr-oxide film by chemically reacting said film with the etchant gas, the improvement comprising: subjecting the Cr or Cr-oxide film to a plasma of a gas mixture containing the vapors of a halide of a hydrocarbon and the vapors of an alcohol selected from a group consisting of CH 3 OH and C 2 H 5 OH.
Claim 3
Dependent Claim
15 words
A dry etching method as set forth in claim 1, wherein said halide is chloride.
Claim 4
Dependent Claim
15 words
A dry etching method as set forth in claim 1, wherein halide is a fluoride.
Claim 5
Dependent Claim
35 words
A dry etching method as set forth in claim 2, wherein said chloride is selected from a group consisting of CCl 4 , C 2 Cl 4 and C 2 H 2 Cl 2 .
Claim 6
Dependent Claim
23 words
A dry etching method as set forth in claim 3, wherein said fluoride is selected from a group consisting of CF 4 .
Claim 7
Dependent Claim
32 words
A dry etching method as set forth in claim 1, wherein said halide vapor and said alcohol vapor are introduced into a chamber and said plasma is generated therein, through individual inlets.
Claim 8
Dependent Claim
23 words
A dry etching method as set forth in claim 1, wherein said Cr or Cr-oxide film is selectively masked with a resist layer.
Claim 9
Dependent Claim
17 words
A dry etching method as set forth in claim 1, wherein said gas mixture includes oxygen gas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-22 | 1990-03-24 | 1990-09-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-22 | 1994-03-24 | 1994-09-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-22 | 1998-03-24 | 1998-09-23 | $7700.00 | Window Closed / Lapsed |