Dry etching method for chromium film

Abstract

Abstract PURPOSE:To perform etching with superior dimensional accuracy by carrying out etching for forming a desired pattern on a mask plate using a chromium film by dry etching using a gaseous mixture of a gas contg. halogen with gaseous CO. CONSTITUTION:A mask plate using a single-layer or multilayer film of chromium or chromium oxide as a photomask material in the manufacture of a semiconductor device is etched to form a desired pattern. At this time, by dry etching such as gas plasma etching or reactive ion etching using a gaseous mixture of a gas contg. halogen, especially Cl such as CCl4 or chloroform with gaseous CO, the mask plate using the chromium film is etched. A chromium film pattern with high dimensional accuracy is easily obtd.

Inventors

• 👤 Yoshimare Suzuki
• 👤 鈴木　淑希
• 👤 Teruhiko Yamazaki
• 👤 山崎　照彦

Bibliographic Details