US4612559A
Expired / Lapsed
US
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Solar cell of amorphous silicon
Assignee: DIRECTOR GENERAL OF AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY MICHIO KAWADA 3-1 KASUMIGASEKI 1-CHOME CHIYODA KU TOKYO
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Filing: 1984-03-08
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Granted: 1986-09-16
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Expires: 2004-03-08
Abstract
Abstract A PIN solar cell of amorphous silicon with a high photovoltaic conversion efficiency is provided, in which in the P type layer, the electric conductivity of a zone in contact with an electrode is higher than that of another zone in contact with the I type layer.
Inventors
- 👤 Hajime Hitotsuyanagi
- 👤 Tadashi Igarashi
- 👤 Masayuki Ishii
- 👤 Tadakazu Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 00:02
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02E10/548
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
68 words
In a solar cell of amorphous silicon having a PIN structure, wherein the solar radiation is allowed to enter from the P type layer, the improvement comprising the P type layer which consists of laminated layers of a P 1 layer and a P 2 layer, the P 1 layer having a larger electrical conductivity and a lower concentration of carbon or nitrogen than the P 2 layer.
Claim 2
Dependent Claim
68 words
In a solar cell of amorphous silicon having a PIN structure, wherein the solar radiation is allowed to enter from the P type layer, the improvement comprising the P type layer which consists of laminated layers of a P 1 layer and a P 2 layer, the P 1 layer having a larger electrical conductivity and a lower concentration of carbon or nitrogen than the P 2 layer.
Claim 3
Dependent Claim
24 words
The solar cell of amorphous silicon of claim 1, in which the P type layer has a continuously varied concentration of carbon or nitrogen.
Claim 4
Dependent Claim
66 words
The solar cell of amorphous silicon of claim 1, in which in the P type layer contains at least one element selected from the group consisting of Group IIIb elements of the Periodic Table and is in a higher concentration in a zone in contact with an electrode in contact with the P type layer than in a zone in contact with the I type layer.
Claim 5
Dependent Claim
75 words
The solar cell of amorphous silicon of claim 1, in which in the P type layer contains at least one element of carbon and nitrogen and at least one element selected from the group consisting of Group IIIb elements of the Periodic Table and is in a higher concentration in a zone in contact with an electrode in contact with the P type layer than in a zone in contact with the I type layer.
Claim 6
Dependent Claim
49 words
The solar cell of amorphous silicon of claim 3, in which the P type layer consists of laminated layers of a P 1 layer and a P 2 layer, the P 1 layer having a higher concentration of Group IIIb element of Periodic Table than the P 2 layer.
Claim 7
Dependent Claim
36 words
The solar cell of amorphous silicon of claim 1, in which the P 1 layer has a thickness of 50 to 150 Å and the P 2 layer has a thickness of 50 to 300 Å.
Claim 8
Dependent Claim
36 words
The solar cell of amorphous silicon of claim 5, in which the P 1 layer has a thickness of 50 to 150 Å and the P 2 layer has a thickness of 50 to 300 Å.
Claim 9
Dependent Claim
27 words
The solar cell of amorphous silicon of claim 1, in which the P type layer has a continuously varied concentration of Group IIIb element of Periodic Table.
Claim 10
Dependent Claim
35 words
The solar cell of amorphous silicon of claim 1, in which the amorphous silicon layer has a conductivity type formed in the order of P type, I type and N type from the substrate side.
Claim 11
Dependent Claim
72 words
A solar cell of amorphous silicon comprising a transparent glass substrate, a transparent conductive film, a layer of amorphous silicon having a PIN structure as in claim 1 and a metal electrode connected to the N layer of the PIN structure whereas the P 1 layer is in contact with the transparent conductive film and has a larger electrical conductivity than the P 2 layer in contact with the I type layer.
Claim 12
Dependent Claim
41 words
The solar cell of amorphous silicon of claim 10, in which the P 1 layer has a higher concentration of at least one member selected from the group consisting of Group IIIb elements of Periodic Table than the P 2 layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-15 | 1990-03-17 | 1990-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-15 | 1994-03-17 | 1994-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-15 | 1998-03-17 | 1998-09-16 | $7700.00 | Window Closed / Lapsed |