High speed input buffer having substrate biasing to increase the transistor threshold voltage for level shifting

Claim 2

In a CMOS integrated circuit in which N channel transistors are formed in P-wells at least one of which has means for receiving a back bias of a first voltage, an input buffer comprising: a first P channel transistor having a first current electrode coupled to a first power supply terminal, a control electrode for receiving an input signal generated externally from the CMOS integrated circuit, and second current electrode; a first N channel transistor, formed in a P-well having means for receiving a back bias of a second voltage which is more negative than the first voltage, having a first current electrode coupled to the second current electrode of the first P channel transistor, a control electrode for receiving the input signal, and a second current electrode coupled to a second power supply terminal; a second P channel transistor having a first current electrode coupled to the first power supply terminal, a control electrode coupled to the second current electrode of the first P channel transistor, and a second current electrode for providing an output signal; and a second N channel transistor, formed in a P-well having means for receiving the back bias of the first voltage, having a first current electrode coupled to the second current electrode of the second power supply terminal, a control electrode coupled to the control electrode of the second P channel transistor, and a second current electrode coupled to the second power supply terminal.

Claim 3

The input buffer of claim 1, wherein the second P channel transistor has a negative threshold voltage of a first magnitude and the first P channel has a negative threshold voltage of a magnitude greater than that of the second P channel transistor.

Claim 4

In a CMOS integrated circuit in which enhancement mode transistors of a first conductivity type are formed in wells of a second conductivity type, the wells having means for receiving a back bias, and at least one of the enhancement mode transistors of the first conductiviTY type has a first threshold voltage in response to a back bias of a first voltage, an input buffer, comprising: a first transistor of the second conductivity type having a first current electrode coupled to a first power supply terminal, a control electrode for receiving an input signal generated externally from the CMOS integrated circuit, and a second current electrode; a second transistor of the first conductivity type formed in a well of the second conductivity type having means for receiving a back bias of a second voltage selected to increase the threshold voltage to a magnitude greater than that of said first threshold voltage, having a first current electrode coupled to the second current electrode of the first input transistor, a control electrode for receiving the input signal, and a second current electrode coupled to a second power supply terminal; a third transistor of the second conductivity type having a first current electrode coupled to a first power supply terminal, a control electrode coupled to the second current electrode of the first transistor, and a second current electrode for providing an output signal; and a fourth transistor of the first conductivity type having a first current electrode coupled to the second power supply terminal, a control electrode coupled to the control electrode of the third transistor, a second current electrode coupled to the second current electrode of the third transistor, said fourth transistor characterized as having the first threshold voltage.

Claim 5

In a CMOS integrated circuit in which enhancement mode transistors of a first conductivity type are formed in wells of a second conductivity type, the wells having means for receiving a back bias, and at least one of the enhancement mode transistors of the first conductiviTY type has a first threshold voltage in response to a back bias of a first voltage, an input buffer, comprising: a first transistor of the second conductivity type having a first current electrode coupled to a first power supply terminal, a control electrode for receiving an input signal generated externally from the CMOS integrated circuit, and a second current electrode; a second transistor of the first conductivity type formed in a well of the second conductivity type having means for receiving a back bias of a second voltage selected to increase the threshold voltage to a magnitude greater than that of said first threshold voltage, having a first current electrode coupled to the second current electrode of the first input transistor, a control electrode for receiving the input signal, and a second current electrode coupled to a second power supply terminal; a third transistor of the second conductivity type having a first current electrode coupled to a first power supply terminal, a control electrode coupled to the second current electrode of the first transistor, and a second current electrode for providing an output signal; and a fourth transistor of the first conductivity type having a first current electrode coupled to the second power supply terminal, a control electrode coupled to the control electrode of the third transistor, a second current electrode coupled to the second current electrode of the third transistor, said fourth transistor characterized as having the first threshold voltage.

Claim 6

In a CMOS integrated circuit having an input buffer which has a first inverter for receiving a signal generated externally from the integrated circuit comprised of a first transistor of a first conductivity type and a second transistor of a second conductivity type, and a second inverter coupled to the first inverter comprised of a third transistor of the first conductivity type and a fourth transistor of the second conductivity type, wherein the first and third transistors each have channel regions formed in an area of the second conductivity type and the second and fourth transistors have channel regions formed in an area of the first conductivity type, a method for reducing leakage current through the input buffer, comprising the steps of: biasing the channel region of the third transistor to a first voltage which causes the third transistor to have a threshold voltage of a first magnitude; and biasing the channel region of the first transistor to a second voltage greater in magnitude than that of the first voltage which causes the first transistor to have a threshold voltage of a magnitude greater than that of the third transistor.

Claim 7

In a CMOS integrated circuit having an input buffer which has a first inverter for receiving a signal generated externally from the integrated circuit comprised of a first transistor of a first conductivity type and a second transistor of a second conductivity type, and a second inverter coupled to the first inverter comprised of a third transistor of the first conductivity type and a fourth transistor of the second conductivity type, wherein the first and third transistors each have channel regions formed in an area of the second conductivity type and the second and fourth transistors have channel regions formed in an area of the first conductivity type, a method for reducing leakage current through the input buffer, comprising the steps of: biasing the channel region of the third transistor to a first voltage which causes the third transistor to have a threshold voltage of a first magnitude; and biasing the channel region of the first transistor to a second voltage greater in magnitude than that of the first voltage which causes the first transistor to have a threshold voltage of a magnitude greater than that of the third transistor.

Claim 8

The method of claim 4 further comprising the steps of: biasing the channel region of the fourth transistor to a third voltage which causes the fourth transistor to have a threshold voltage of a second magnitude; and biasing the channel region of the second transistor to a fourth voltage greater in magnitude than that of the third voltage which causes the third transistor to have a threshold voltage of a magnitude greater than that of the fourth transistor.