US4611385A
Expired / Lapsed
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Devices formed utilizing organic materials
Assignee: Nokia Bell Labs
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Filing: 1984-04-23
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Granted: 1986-09-16
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Expires: 2004-04-23
Abstract
Abstract The use of an organic material having a conjugated ring system such as 3,4,9,10-perylenetetracarboxylic dianhydride interfaced with a semiconductor material such as silicon yields quite acceptable rectifying properties. These properties are used to test the suitability of the substrate during processing. Additionally, these materials upon irradiation change refractive index, allowing production of optical devices such as gratings. The combination of electrical and optical devices formed using these organic materials also allows relatively simple fabrication of integrated opto-electronic structures.
Inventors
- 👤 Stephen R. Forrest
- 👤 Martin L. Kaplan
- 👤 Paul H. Schmidt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:36
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/12007; G02B6/24; G02B6/26; G02B6/30; G02B6/42; G02B6/4201; G02B6/4246; H; H10; H10D; H10D64/00; H10D64/60; H10D64/62; H10K; H10K10/00; H10K10/20; H10K10/29; H10K30/00; H10K30/10; G02B6/28; G02B6/293; G02B6/29304; G02B6/29316; G02B6/29317; G02B6/29319; H10D62/00; H10D62/80; H10D62/85; H10K39/00; H10K85/00; H10K85/60; H10K85/615; H10K85/621; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/549
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
109 words
A process for forming a plurality of devices comprising the steps of choosing during said formation a semiconductor region of a representative device of said plurality, measuring at least one property of said region, and completing the formation of all or some of said plurality if said property is satisfactory characterized in that said property is measured by depleting a semiconductor region of said device by applying an electric field across an interface formed by a semiconductor portion of said device and a material chosen from the group consisting of 1,8-naphthalic anhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, imides and diimides of 3,4,9,10-perylenetetracarboxylic dianhydride, and imides and diimides of 1,4,5,8-naphthalenetetracarboxylic dianhydride.
Claim 2
Dependent Claim
109 words
A process for forming a plurality of devices comprising the steps of choosing during said formation a semiconductor region of a representative device of said plurality, measuring at least one property of said region, and completing the formation of all or some of said plurality if said property is satisfactory characterized in that said property is measured by depleting a semiconductor region of said device by applying an electric field across an interface formed by a semiconductor portion of said device and a material chosen from the group consisting of 1,8-naphthalic anhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, imides and diimides of 3,4,9,10-perylenetetracarboxylic dianhydride, and imides and diimides of 1,4,5,8-naphthalenetetracarboxylic dianhydride.
Claim 3
Dependent Claim
33 words
The process of claim 1 wherein said semiconductor region comprises a member of the group consisting of indium phosphide, gallium arsenide, indium gallium arsenide phosphide, silicon, indium gallium arsenide, and gallium aluminum arsenide.
Claim 4
Dependent Claim
12 words
The process of claim 1 wherein said device comprises an integrated circuit.
Claim 5
Dependent Claim
11 words
The process of claim 1 wherein said device comprises a photodetector.
Claim 6
Dependent Claim
13 words
The process of claim 1 wherein said semiconductor portion comprises said semiconductor region.
Claim 7
Dependent Claim
93 words
A process for forming a device comprising the steps of measuring at least one property of a semiconductor region of said device during said formation and completing said device if said property is satisfactory characterized in that said property is measured by depleting a semiconductor region of said device by applying an electric field across an interface formed by a semiconductor portion of said device and a material chosen from the group consisting of 1,8-naphthalic anhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, imides and diimides of 3,4,9,10-perylenetetracarboxylic dianhydride, and imides and diimides of 1,4,5,8-naphthalenetetracarboxylic dianhydride.
Claim 8
Dependent Claim
93 words
A process for forming a device comprising the steps of measuring at least one property of a semiconductor region of said device during said formation and completing said device if said property is satisfactory characterized in that said property is measured by depleting a semiconductor region of said device by applying an electric field across an interface formed by a semiconductor portion of said device and a material chosen from the group consisting of 1,8-naphthalic anhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, imides and diimides of 3,4,9,10-perylenetetracarboxylic dianhydride, and imides and diimides of 1,4,5,8-naphthalenetetracarboxylic dianhydride.
Claim 9
Dependent Claim
33 words
The process of claim 6 wherein said semiconductor region comprises a member of the group consisting of indium phosphide, gallium arsenide, indium gallium arsenide phosphide, silicon, indium gallium arsenide, and gallium aluminum arsenide.
Claim 10
Dependent Claim
12 words
The process of claim 6 wherein said device comprises an integrated circuit.
Claim 11
Dependent Claim
11 words
The process of claim 6 wherein said device comprises a photodetector.
Claim 12
Dependent Claim
13 words
The process of claim 6 wherein said semiconductor portion comprises said semiconductor region.
References Cited (Backward Citations)
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