Abstract An InGaAsP laser structure having a support structure which contains an equal number of buffer layers and substrate layers is provided. The buffer layers of the support structure drastically reduce the tensile stress in the active layer, thereby eliminating the occurrence of undesired TM emission during normal operation. The semiconductor laser device of the present invention comprises: a support structure having one or more substrate layers and one or more buffer layers, the support structure containing an equal number of substrate layers and buffer layers, the substrate layers consisting of InP, the buffer layers consisting of In 1-x' Ga x' As y' P 1-y' with x'≃0.47y' and 0<y'≦1, one of the substrate layers providing the lower surface of said semiconductor laser device; a first cladding layer of InP formed on the exposed buffer layer of the support structure; an active layer formed on the first cladding layer, the active layer consisting of In 1-x Ga x As y P 1-y with x≃0.47y and y≦y'≦1 and a second cladding layer of InP formed on the active layer; and a cap layer of In 1-x" Ga x" As y" P 1-y" with x"≃0.47y" and 0<y"≦1 formed on the second cladding layer; the buffer layers, first cladding layer, active layer, second cladding layer, and cap layer being substantially perfectly lattice-matched with the substrate layers at the growth temperature. Preferably, the buffer layers consist of In 0 .53 GA 0 .47 As.
A semiconductor laser device comprising: a support structure having one or more substrate layers and one or more buffer layers, said support structure containing an equal number of substrate layers and buffer layers, said substrate layers consisting of InP, and said buffer layers consisting of In 1-x' Ga x' As y' P 1-y' with x'≃0.47y' and 0<y'≦1, one of said substrate layers providing the lower surface of said semiconductor laser device and one of said buffer layers providing the upper surface of said support structure; a first cladding layer of InP formed on said upper surface of said support structure; an active layer formed on said first cladding layer, said active layer consisting of In 1-x Ga x As y P 1-y with x≃0.47y and y≦y'≦1, y>0; a second cladding layer of InP formed on said active layer; and a cap layer of In 1-x Ga x As y P 1-y with x"≃0.47y" and 0<y"≦1 formed on said second cladding layer; wherein said buffer layers, said first cladding layer, said active layer, said second cladding layer, and said cap layer are substantially perfectly lattice-matched with said substrate layers at the growth temperature.
Claim 2
Dependent Claim
192 words
A semiconductor laser device comprising: a support structure having one or more substrate layers and one or more buffer layers, said support structure containing an equal number of substrate layers and buffer layers, said substrate layers consisting of InP, and said buffer layers consisting of In 1-x' Ga x' As y' P 1-y' with x'≃0.47y' and 0<y'≦1, one of said substrate layers providing the lower surface of said semiconductor laser device and one of said buffer layers providing the upper surface of said support structure; a first cladding layer of InP formed on said upper surface of said support structure; an active layer formed on said first cladding layer, said active layer consisting of In 1-x Ga x As y P 1-y with x≃0.47y and y≦y'≦1, y>0; a second cladding layer of InP formed on said active layer; and a cap layer of In 1-x Ga x As y P 1-y with x"≃0.47y" and 0<y"≦1 formed on said second cladding layer; wherein said buffer layers, said first cladding layer, said active layer, said second cladding layer, and said cap layer are substantially perfectly lattice-matched with said substrate layers at the growth temperature.
Claim 3
Dependent Claim
22 words
A semiconductor laser device in accordance with claim 1 wherein said buffer layers consist of In 0 .53 Ga 0 .47 As.