Solid-state switch

Claim 2

A four-region solid-state switching device comprising, a body of semiconductor material, said body having top and bottom opposed major surfaces, anode and cathode emitter regions spaced apart and disposed in said top surface, anode base region and cathode base region exposed on a mesa portion of said top surface to receive activating light pulses, said mesa portion being disposed between said anode and cathode emitter region and metal electrodes affixed to only said anode emitter region and said cathode emitter region.

Claim 3

The four-region solid-state switching device of claim 1 in which the mesa portion of said top surface has a serpentine configration.

Claim 4

The four-region solid-state switching device of claim 2 in which straight portions of said serpentine configuration are parallel to each other and curved portions of said serpentine configuration, which connect adjacent straight portions, are wider by a factor of from 10% to 200% than said straight portions.

Claim 5

A four-region solid-state switching device comprising, a body of semiconductor material, said body having top and bottom opposed major surfaces, said top surface having a central and peripheral mesa portion, an anode emitter region disposed in said top surface of said body on one side of said central mesa, a cathode emitter region disposed in said top surface of said body on an opposite side of said central mesa from said anode emitter region, anode and cathode base regions exposed on said top surface of said body on said central mesa, said central mesa portion of said top surface having a serpentine configuration, straight portions of said serpentine configuration being parallel to each other and curved portions of said serpentine configuration, which connect adjacent straight portions being wider than said straight portions by a factor of from 10% to 200%, and metal electrodes affixed to only said anode and cathode emitter regions.

Claim 6

A four-region solid-state switching device comprising, a body of semiconductor material, said body having top and bottom opposed major surfaces, said top surface having a central and peripheral mesa portion, an anode emitter region disposed in said top surface of said body on one side of said central mesa, a cathode emitter region disposed in said top surface of said body on an opposite side of said central mesa from said anode emitter region, anode and cathode base regions exposed on said top surface of said body on said central mesa, said central mesa portion of said top surface having a serpentine configuration, straight portions of said serpentine configuration being parallel to each other and curved portions of said serpentine configuration, which connect adjacent straight portions being wider than said straight portions by a factor of from 10% to 200%, and metal electrodes affixed to only said anode and cathode emitter regions.

Claim 7

A four-region solid-state switching device comprising, a body of semiconductor material, said body having major spaced-apart top and bottom surfaces, and an edge portion extending between said top and bottom surfaces, walls of the top surface of the body forming a first and a second well in said top surface of said body, each of said wells having side walls and a bottom surface, said wells defining a central mesa disposed between said wells in said top surface of said body and two separate peripheral mesas in said top surface of said body, said peripheral mesas each extending from said edge portion of said body to one of said wells, said mesas extending in a straight line across the top surface of the body of semiconductor material, a cathode emitter region formed in the side walls and bottom surface of the first well, an anode emitter region formed in the side walls and bottom surface of the second well, a cathode base region adjacent said cathode emitter region and extending from one peripheral mesa to the central mesa, an anode base region adjacent both the cathode base region and the anode emitter region and extending into the central mesa, and electrodes disposed only within each of said wells to facilitate making electrical contact to only each of the emitter regions.

Claim 8

A four-region solid-state switching device comprising, a body of semiconductor material, said body having major spaced-apart top and bottom surfaces, and an edge portion extending between said top and bottom surfaces, walls of the top surface of the body forming a first and a second well in said top surface of said body, each of said wells having side walls and a bottom surface, said wells defining a central mesa disposed between said wells in said top surface of said body and two separate peripheral mesas in said top surface of said body, said peripheral mesas each extending from said edge portion of said body to one of said wells, said mesas extending in a straight line across the top surface of the body of semiconductor material, a cathode emitter region formed in the side walls and bottom surface of the first well, an anode emitter region formed in the side walls and bottom surface of the second well, a cathode base region adjacent said cathode emitter region and extending from one peripheral mesa to the central mesa, an anode base region adjacent both the cathode base region and the anode emitter region and extending into the central mesa, and electrodes disposed only within each of said wells to facilitate making electrical contact to only each of the emitter regions.

Claim 9

A thyristor comprising a body of semiconductor material, said body having major spaced-apart top and bottom surfaces and an edge portion extending between said top and bottom surfaces, walls of the top surface of the body forming a first and a second well in said top surface of said body, each of said wells having side walls and a bottom surface, said wells defining a central mesa disposed between said wells in said top surface of said body and two peripheral mesas in said top surface of said body, said peripheral mesas each extending from said edge portion of said body to one of said wells, a first region of said first-type conductivity, said first region extending from said side walls and bottom surface of said first well a predetermined distance into said body, said first region terminating in the top surface of the body in the central mesa and in the top surface of the body in one peripheral mesa, a second region of a second-type of conductivity extending from said first region a predetermined distance into said body, said second region terminating in the top surface of the body central mesa and in the top surface of the body in said one peripheral mesa, a p-n junction between said first and second regions, a third region, said third region having said secondtype conductivity, said third region originating in the top surface of the body in the central mesa portion, spaced apart from said second region in said central mesa portion, extending into the body a predetermined distance under said other well, extending in the body the same predetermined distance under the top surface of the other peripheral mesa, and extending into the body the same predetemrined distance from said edge portion and from said bottom surface of the body and terminating in said one peripheral mesa spaced apart from said second region, a fourth region, said fourth region having said first-type conductivity, said fourth region extending between said second region and said third region throughout the body, and only two metal electrodes, the first metal electrode affixed to the side walls and bottom surface of said first well and the second metal electrode affixed to the side walls and bottom surface of said second well.

Claim 10

A thyristor comprising a body of semiconductor material, said body having major spaced-apart top and bottom surfaces and an edge portion extending between said top and bottom surfaces, walls of the top surface of the body forming a first and a second well in said top surface of said body, each of said wells having side walls and a bottom surface, said wells defining a central mesa disposed between said wells in said top surface of said body and two peripheral mesas in said top surface of said body, said peripheral mesas each extending from said edge portion of said body to one of said wells, a first region of said first-type conductivity, said first region extending from said side walls and bottom surface of said first well a predetermined distance into said body, said first region terminating in the top surface of the body in the central mesa and in the top surface of the body in one peripheral mesa, a second region of a second-type of conductivity extending from said first region a predetermined distance into said body, said second region terminating in the top surface of the body central mesa and in the top surface of the body in said one peripheral mesa, a p-n junction between said first and second regions, a third region, said third region having said secondtype conductivity, said third region originating in the top surface of the body in the central mesa portion, spaced apart from said second region in said central mesa portion, extending into the body a predetermined distance under said other well, extending in the body the same predetermined distance under the top surface of the other peripheral mesa, and extending into the body the same predetemrined distance from said edge portion and from said bottom surface of the body and terminating in said one peripheral mesa spaced apart from said second region, a fourth region, said fourth region having said first-type conductivity, said fourth region extending between said second region and said third region throughout the body, and only two metal electrodes, the first metal electrode affixed to the side walls and bottom surface of said first well and the second metal electrode affixed to the side walls and bottom surface of said second well.