Patent US4611091A successfully refreshed from Google Patents.
US4611091A
Expired / Lapsed
US
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CuInSe2 thin film solar cell with thin CdS and transparent window layer
Assignee: Atlantic Richfield Co
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Filing: 1984-12-06
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Granted: 1986-09-09
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Expires: 2004-12-06
Abstract
Abstract A thin film photovoltaic device having first layer of copper indium selenide, a second layer of cadmium sulfide having a thickness less than 2500 angstroms, and a third layer of conducting wide bandgap semiconductor such as zinc oxide. The transparent third layer allows good transmission of blue light to the junction region while fully depleting the junction area to improve device voltage.
Inventors
- 👤 Uppala V. Choudary
- 👤 Yuh-Han Shing
- 👤 Richard R. Potter
- 👤 James H. Ermer
- 👤 Vijay K. Kapur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:01
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/167; H10F10/169; H10F77/00; H10F77/20; H10F77/206; H10F77/211; H10F77/244; H10F77/251; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541; Y02E10/543
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
61 words
A thin film photovoltaic device comprising a first layer of copper indium diselenide p-type semiconductor, a second layer in overlying contact with said first layer and formed of n-type cadmium sulfide semiconductor having a thickness of less than 2500Å, and a third layer in overlying contact with said second layer and formed of a substantially transparent degenerate wide bandgap n-type semiconductor.
Claim 2
Dependent Claim
61 words
A thin film photovoltaic device comprising a first layer of copper indium diselenide p-type semiconductor, a second layer in overlying contact with said first layer and formed of n-type cadmium sulfide semiconductor having a thickness of less than 2500Å, and a third layer in overlying contact with said second layer and formed of a substantially transparent degenerate wide bandgap n-type semiconductor.
Claim 3
Dependent Claim
21 words
A photovoltaic device according to claim 1 wherein said second layer has a thickness of from about 100Å to about 1500Å.
Claim 4
Dependent Claim
15 words
A photovoltaic device according to claim 1 wherein said third layer comprises primarily zinc oxide.
Claim 5
Dependent Claim
20 words
A photovoltaic device according to claim 1 wherein said third layer has sufficient conductivity to fully deplete said second layer.
Claim 6
Dependent Claim
69 words
A thin film photovoltaic device comprising a first layer of p-type copper indium diselenide, a second layer in overlying contact with said first layer and formed of an n-type group II-VI semiconductor which forms a junction with the first layer and having a thickness less than 2500 angstroms, and a third layer in overlying contact with said second layer and formed of a substantially conducting wide bandgap n-type semiconductor.
Claim 7
Dependent Claim
69 words
A thin film photovoltaic device comprising a first layer of p-type copper indium diselenide, a second layer in overlying contact with said first layer and formed of an n-type group II-VI semiconductor which forms a junction with the first layer and having a thickness less than 2500 angstroms, and a third layer in overlying contact with said second layer and formed of a substantially conducting wide bandgap n-type semiconductor.
References Cited (Backward Citations)
US4327119A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-08 | 1990-03-10 | 1990-09-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-08 | 1994-03-10 | 1994-09-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-08 | 1998-03-10 | 1998-09-09 | $7700.00 | Window Closed / Lapsed |