Photoresist compositions and method

Claim 1

A method of patterning a photoresist on a substrate which comprises (1) applying photocurable composition on a substrate which photocurable composition comprises (A) 50 to 98% of a solvent, and (B) 2 to 50% of a photoresist composition comprising (i) 100 parts of a water soluble hydroxyl functional film forming organic oligomer, (ii) 50 to 100 parts of an alkanolacrylamide, and (iii) an amount of an onium salt which is sufficient to effect the cure of the photoresist elected from the class consisting of [Ar.sub.3 I].sup.+ [MF].sub.d.sup.-, and [Ar.sub.3 S].sup.+ [MF].sub.d.sup.-, (2) heating the treated substrate to a temperature in the range of from 50° C. to 150° C. to produce a dry film on the treated substrate, (3) contacting the treated substrate with a mask and irradiating the substrate, and (4) developing the treated substrate in water to produce a patterned photoresist on the surface of the substrate, where Ar is selected from C.sub.(6-13) aromatic hydrocarbon radical and substituted aromatic hydrocarbon radical, M is a metalloid selected from phosphorous, arsenic and antimony and d is an integer equal to 4-6 inclusive.

Claim 2

A method of patterning a photoresist on a substrate which comprises (1) applying photocurable composition on a substrate which photocurable composition comprises (A) 50 to 98% of a solvent, and (B) 2 to 50% of a photoresist composition comprising (i) 100 parts of a water soluble hydroxyl functional film forming organic oligomer, (ii) 50 to 100 parts of an alkanolacrylamide, and (iii) an amount of an onium salt which is sufficient to effect the cure of the photoresist elected from the class consisting of [Ar.sub.3 I].sup.+ [MF].sub.d.sup.-, and [Ar.sub.3 S].sup.+ [MF].sub.d.sup.-, (2) heating the treated substrate to a temperature in the range of from 50° C. to 150° C. to produce a dry film on the treated substrate, (3) contacting the treated substrate with a mask and irradiating the substrate, and (4) developing the treated substrate in water to produce a patterned photoresist on the surface of the substrate, where Ar is selected from C.sub.(6-13) aromatic hydrocarbon radical and substituted aromatic hydrocarbon radical, M is a metalloid selected from phosphorous, arsenic and antimony and d is an integer equal to 4-6 inclusive.