Patent US4609930A successfully refreshed from Google Patents.
US4609930A
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Thin film transistor
Assignee: LG Display Co Ltd
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Filing: 1984-05-07
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Granted: 1986-09-02
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Expires: 2004-05-07
Abstract
Abstract A thin film transistor of amorphous silicon is supported by an insulated gate on an insulating substrate and has the opposite side covered with a shading layer of amorphous silicon containing germanium in an amount more than 30% atomic density.
Inventors
- 👤 Tsuneo Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 13:17
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
191 words
A thin film transistor of an insulated gate electric field effect type comprising: a conductor layer of an electrically conductive material disposed on at least one major surface of a substrate to define a gate electrode; an insulator layer of an electrically insulating material disposed on the conductor layer; source and drain electrodes of electrically conductive material disposed on the substrate and in contact with edge portions of said insulator layer, said source and drain electrodes being spaced apart from each other; a semiconductor layer of semiconductor material in contact with said source and drain electrodes and in contact with said insulator layer in the region between said source and drain electrodes; a shading layer in contact with said source and drain electrodes and in contact with said semiconductor layer in the region between said source and drain electrodes, said shading layer comprised of an amorphous silicon containing germanium in an amount more than 30% by atomic density; and an insulator layer of an electrically insulating material in contact with said source and drain electrodes and in contact with said shading layer in the region between said source and drain electrodes.
Claim 2
Dependent Claim
191 words
A thin film transistor of an insulated gate electric field effect type comprising: a conductor layer of an electrically conductive material disposed on at least one major surface of a substrate to define a gate electrode; an insulator layer of an electrically insulating material disposed on the conductor layer; source and drain electrodes of electrically conductive material disposed on the substrate and in contact with edge portions of said insulator layer, said source and drain electrodes being spaced apart from each other; a semiconductor layer of semiconductor material in contact with said source and drain electrodes and in contact with said insulator layer in the region between said source and drain electrodes; a shading layer in contact with said source and drain electrodes and in contact with said semiconductor layer in the region between said source and drain electrodes, said shading layer comprised of an amorphous silicon containing germanium in an amount more than 30% by atomic density; and an insulator layer of an electrically insulating material in contact with said source and drain electrodes and in contact with said shading layer in the region between said source and drain electrodes.
Claim 3
Dependent Claim
49 words
A thin film transistor of an insulated gate electric field effect type as claimed in claim 1; further comprising another insulator layer of an electrically insulating material sandwiched between said shading layer and said semiconductor layer, said another insulator layer being in contact with said source and drain electrodes.
Claim 4
Dependent Claim
64 words
A thin film transistor of an insulated gate electric field effect type as claimed in claim 2; further comprising a multilayered structure comprised of an insulator layer and shading layer sandwiched between said substrate and first-mentioned insulator layer, the shading layer of the multilayered structure being composed of amorphous silicon containing germanium and being in contact with the one major surface of the substrate.
Claim 5
Dependent Claim
64 words
A thin film transistor of an insulated gate electric field effect type as claimed in claim 1; further comprising a multilayered structure comprised of an insulator layer and shading layer sandwiched between said substrate and first-mentioned insulator layer, the shading layer of the multilayered structure being composed of amorphous silicon containing germanium and being in contact with the one major surface of the substrate.
Claim 6
Dependent Claim
33 words
A thin film transistor of an insulated gate electric field effect type as claimed in claim 1; wherein the shading layer contains germanium in an amount from 40% to 80% by atomic density.
Claim 7
Dependent Claim
31 words
A thin film transistor of an insulated gate electric field effect type as claimed in claim 1; wherein the shading layer has a thickness in the range 0.1 to 2 μm.
Claim 8
Dependent Claim
28 words
A thin film transistor of an insulated gage electric field effect type as claimed in claim 1; wherein the shading layer has a thickness of about 0.1 μm.
Claim 9
Dependent Claim
28 words
A thin film transistor of an insulated gate electric field effect type as claimed in claim 1; wherein the shading layer has a thickness less than 2 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-01 | 1990-03-03 | 1990-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-01 | 1994-03-03 | 1994-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-01 | 1998-03-03 | 1998-09-02 | $7700.00 | Window Closed / Lapsed |