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US4609530A
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GaAs single crystal with small fluctuation in impurity concentration in the plane perpendicular to the growth direction of the crystal
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1984-12-18
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Granted: 1986-09-02
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Expires: 2004-12-18
Abstract
Abstract A GaAs single crystal containing at least one impurity selected from the group consisting of B, Si, S, Te and In in a concentration of at least 10 15 /cm 3 , fluctuation of which is not larger than 20% in a plane perpendicular to a growth direction of the single crystal, which is prepared by pulling up the GaAs single crystal from a GaAs raw material melt contained in a crucible which is encapsulated with a liquid encapsulating layer in an inactive gas atmosphere at a high pressure with applying a magnetic field to the raw material melt.
Inventors
- 👤 Mikio Morioka
- 👤 Atsushi Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:48
CPC Classifications
C; C30; C30B; C30B15/00; C30B29/00; C30B29/10; C30B29/40; C30B29/42
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
57 words
A GaAs single crystal containing at least one impurity selected from the group consisting of B, Si, S, Te and In in a concentration of at least 10 15 /cm 3 , wherein fluctuation of the concentration of the impurity is not larger than 20% in a plane perpendicular to a growth direction of the single crystal.
Claim 2
Dependent Claim
57 words
A GaAs single crystal containing at least one impurity selected from the group consisting of B, Si, S, Te and In in a concentration of at least 10 15 /cm 3 , wherein fluctuation of the concentration of the impurity is not larger than 20% in a plane perpendicular to a growth direction of the single crystal.
Claim 3
Dependent Claim
22 words
A GaAs single crystal according to claim 1, wherein the concentration of the impurity is at least 10 17 /cm 3 .
Claim 4
Dependent Claim
13 words
A GaAs single crystal according to claim 1, wherein the impurity is IN.
Claim 5
Dependent Claim
18 words
A GaAs single crystal according to claim 1, which further contains an n- or p- type additive impurity.
Claim 6
Dependent Claim
19 words
A GaAs single crystal according to claim 1, the cross section of which does not show any growth striation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-01 | 1990-03-03 | 1990-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-01 | 1994-03-03 | 1994-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-01 | 1998-03-03 | 1998-09-02 | $7700.00 | Window Closed / Lapsed |